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Copper-Content Dependent Structural and Electrical Properties of CZTS Films Formed by “Green” Colloidal Nanocrystals
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Magnetization of Magnetically Inhomogeneous Sr2FeMoO6-δ Nanoparticles
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Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane
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How Can the Lattice Thermal Conductivity Be Most Effectively Reduced in Alloys with Sublattice Solid Solution?
Journal Description
Electronic Materials
Electronic Materials
is an international, peer-reviewed, open access journal on fundamental science, engineering, and practical applications of electronic materials published quarterly online by MDPI.
- Open Access— free for readers, with article processing charges (APC) paid by authors or their institutions.
- Rapid Publication: manuscripts are peer-reviewed and a first decision is provided to authors approximately 14.6 days after submission; acceptance to publication is undertaken in 6.6 days (median values for papers published in this journal in the second half of 2022).
- Recognition of Reviewers: APC discount vouchers, optional signed peer review, and reviewer names published annually in the journal.
- Electronic Materials is a companion journal of Materials.
Latest Articles
A Neural Network to Decipher Organic Electrochemical Transistors’ Multivariate Responses for Cation Recognition
Electron. Mater. 2023, 4(2), 80-94; https://doi.org/10.3390/electronicmat4020007 - 18 May 2023
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Extracting relevant data from real-world experiments is often challenging with intrinsic materials and device property dispersion, such as in organic electronics. However, multivariate data analysis can often be a mean to circumvent this and to extract more information when larger datasets are used
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Extracting relevant data from real-world experiments is often challenging with intrinsic materials and device property dispersion, such as in organic electronics. However, multivariate data analysis can often be a mean to circumvent this and to extract more information when larger datasets are used with learning algorithms instead of physical models. Here, we report on identifying relevant information descriptors for organic electrochemical transistors (OECTs) to classify aqueous electrolytes by ionic composition. Applying periodical gate pulses at different voltage magnitudes, we extracted a reduced number of nonredundant descriptors from the rich drain-current dynamics, which provide enough information to cluster electrochemical data by principal component analysis between Ca2+-, K+-, and Na+-rich electrolytes. With six current values obtained at the appropriate time domain of the device charge/discharge transient, one can identify the cationic identity of a locally probed transient current with only a single micrometric device. Applied to OECT-based neural sensors, this analysis demonstrates the capability for a single nonselective device to retrieve the rich ionic identity of neural activity at the scale of each neuron individually when learning algorithms are applied to the device physics.
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Open AccessArticle
Modelling of Low-Voltage Varistors’ Responses under Slow-Front Overvoltages
Electron. Mater. 2023, 4(2), 62-79; https://doi.org/10.3390/electronicmat4020006 - 09 May 2023
Abstract
In this study, commercially low-voltage MOVs are exposed to switching surges to analyse and model the relationship between the number of surges and the MOV grain barrier height response. Repeated slow-front overvoltage transients are used to degrade the protective qualities of metal oxide
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In this study, commercially low-voltage MOVs are exposed to switching surges to analyse and model the relationship between the number of surges and the MOV grain barrier height response. Repeated slow-front overvoltage transients are used to degrade the protective qualities of metal oxide surge arrester devices, affecting their reliability and stability. A total of 360 MOVs with similar specifications from three different manufacturers are degraded under switching surges at a constant temperature of 60 °C. The reference voltage and C-V characteristics of MOVs are measured before and after the degradation process to analyse the MOVs’ conditions. Grain barrier heights are determined from the C-V characteristics curve. An F-statistical analysis is then applied to analyse the effects of number of surges on the grain barrier height. The T-test is used to assess the statistical difference between the tested groups. Linear regression analysis is then applied to model the relationship between the number of surges and MOV grain barrier height. The results obtained show that the number of surges has a significant impact on grain barrier height. MOV grain barrier height is found to decrease as the number of surges applied increases. Regression models obtained for the tested MOV groups across all three manufacturers agree and indicate that the reduction in grain barrier height results from an increased number of surges. Regression coefficients of a developed model indicate that for one surge applied, the MOV grain barrier height decreases by 0.024, 0.055, and 0.033 eV/cm for manufacturers X, Y, and Z, respectively. Therefore, there is a linear relationship between grain barrier height and the number of applied switching surges.
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(This article belongs to the Special Issue Metal Oxide Semiconductors for Electronic Applications)
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On-Surface Synthesis and Applications of 2D Covalent Organic Framework Nanosheets
Electron. Mater. 2023, 4(2), 49-61; https://doi.org/10.3390/electronicmat4020005 - 12 Apr 2023
Abstract
Covalent organic framework nanosheets (COF nanosheets) are two-dimensional crystalline porous polymers with in-plane covalent bonds and out-of-plane Van der Waals forces. Owing to the customizable structure, chemical modification, and ultra-high porosity, COF nanosheets show many fascinating properties unique to traditional two-dimensional materials, and
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Covalent organic framework nanosheets (COF nanosheets) are two-dimensional crystalline porous polymers with in-plane covalent bonds and out-of-plane Van der Waals forces. Owing to the customizable structure, chemical modification, and ultra-high porosity, COF nanosheets show many fascinating properties unique to traditional two-dimensional materials, and have shown potential applications in gas separation, sensors, electronic, and optoelectronic devices. This minireview aims to illustrate recent progress on two-dimensional covalent organic framework nanosheets, from two aspects of on-surface synthesis and potential applications. We first review the synthesis of COF nanosheets at the gas–solid interface. On-surface synthesis under ultrahigh vacuum and on-surface synthesis under vapor are highlighted. In addition, we also review the liquid–solid interface synthesis of COF nanosheets at various substrates, i.e., both crystalline and amorphous substrates. Beyond the synthesis, we highlight state-of-the-art applications of the COF nanosheets, particularly in charge transport, chemical sensors, and gas separation.
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(This article belongs to the Special Issue Feature Papers of Electronic Materials II)
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Chlorine Adsorption on TiO2(110)/Water Interface: Nonadiabatic Molecular Dynamics Simulations for Photocatalytic Water Splitting
by
, , , , , and
Electron. Mater. 2023, 4(1), 33-48; https://doi.org/10.3390/electronicmat4010004 - 07 Mar 2023
Abstract
Chloride is one of the most abundant ions in sea water, which is more available than fresh water. Due to lack of H O adsorbate states near the valence band maximum (VBM) edge, the difficulty of water dissociation incidents has been reported
[...] Read more.
Chloride is one of the most abundant ions in sea water, which is more available than fresh water. Due to lack of H O adsorbate states near the valence band maximum (VBM) edge, the difficulty of water dissociation incidents has been reported on the rutile TiO surface as the excitation energy is around the band gap energy of TiO . It is interesting whether the extra chloride can be a benefit to the water dissociation or not. In this study, the models of chlorine adatoms placed on the rutile TiO (110)/water interface are constructed using ab initio methods. The time-dependent spatial charges, bond-lengths of water molecules, and Hirshfeld charges are calculated by real-time time-dependent density functional theory and the Ehrenfest dynamics theory for investigating the excited state nonadiabatic dynamics of water dissociation. This study presents two photoinduced water-splitting pathways related to chlorine and analyzes the photogenerated hole along the reactions. The first step of water dissociation relies on the localized competition of oxygen charges between the dissociated water and the bridge site of TiO for transforming the water into hydroxyl and hydrogen by photoinduced driving force.
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(This article belongs to the Special Issue Feature Papers of Electronic Materials II)
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Recent Research Process of Carbon Engineering on Na3V2(PO4)3 for Sodium-Ion Battery Cathodes: A Mini Review
Electron. Mater. 2023, 4(1), 17-32; https://doi.org/10.3390/electronicmat4010003 - 31 Jan 2023
Abstract
Owing to the 3D open framework, excellent structural stability, and high ionic conductivity, NASICON-type compounds are extensively employed as promising cathode materials for sodium-ion batteries (SIBs). Being one of the representative NASICON-type compounds, the Na3V2(PO4)3 delivers
[...] Read more.
Owing to the 3D open framework, excellent structural stability, and high ionic conductivity, NASICON-type compounds are extensively employed as promising cathode materials for sodium-ion batteries (SIBs). Being one of the representative NASICON-type compounds, the Na3V2(PO4)3 delivers high theoretical capacity with an operating voltage exceeding 3.3 V, enabling it to be a good candidate for SIBs. Unfortunately, the Na3V2(PO4)3 suffers from low electronic conductivity. In this work, we briefly review the recent research progress on novel carbon engineering strategies to enhance the electronic conductivity of Na3V2(PO4)3. Moreover, we will point out the issues relating to the development of NASICON cathode materials and put forward some suggestions.
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(This article belongs to the Special Issue Feature Papers of Electronic Materials II)
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Acknowledgment to the Reviewers of Electronic Materials in 2022
Electron. Mater. 2023, 4(1), 15-16; https://doi.org/10.3390/electronicmat4010002 - 18 Jan 2023
Abstract
High-quality academic publishing is built on rigorous peer review [...]
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Open AccessArticle
Study of Electronic Bands of Diatomic Molecules for the Evaluation of Toxicity of Green Crackers Using LIBS Coupled with Chemometric Method
Electron. Mater. 2023, 4(1), 1-14; https://doi.org/10.3390/electronicmat4010001 - 27 Dec 2022
Abstract
Laser-induced Breakdown Spectroscopy (LIBS) is primarily an atomic emission spectroscopic method based on analyzing the spectral lines of elements in the laser-induced plasma. However, when the plasma cools down after its ignition, i.e., when one collects the emissions from the plasma after a
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Laser-induced Breakdown Spectroscopy (LIBS) is primarily an atomic emission spectroscopic method based on analyzing the spectral lines of elements in the laser-induced plasma. However, when the plasma cools down after its ignition, i.e., when one collects the emissions from the plasma after a certain interval of time/gate delay (~1 micro-second), the signature of the electronic bands of diatomic molecules is also observed along with ionic/atomic emission lines. The present manuscript reports the evaluation of toxicity/pollutants in green crackers based on the intensity of the electronic bands of the Aluminum Oxide (AlO), calcium oxide (CaO), and strontium oxide (SrO) molecules observed in the laser-induced plasma of the firecrackers. LIBS spectra of the green crackers show the presence of spectral lines of the heavy/toxic elements such as Al, Ca, Sr, Cr, Cu, and Ba, along with the electronic bands of the AlO, CaO, and SrO. Fourier Transform Infra-Red Spectroscopy (FTIR) has been used to validate the LIBS results and confirm the molecules in these crackers. The concentration of toxic elements in green crackers such as Aluminum (Al), Copper (Cu), and Chromium (Cr) has also been estimated using the Partial Least Square Regression method (PLSR) to evaluate and compare the extent of the toxicity of green crackers.
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(This article belongs to the Topic Characterization of Electrochemical Materials)
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Open AccessArticle
Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector
by
, , , , and
Electron. Mater. 2022, 3(4), 357-367; https://doi.org/10.3390/electronicmat3040029 - 09 Dec 2022
Cited by 5
Abstract
Epitaxial GaN nanostructures are developed, and the influence of the AlN buffer layer (temperature modulation) on material characteristics and optoelectronic device application is assessed. The AlN buffer layer was grown on a Si (111) substrate at varying temperatures (770–830 °C), followed by GaN
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Epitaxial GaN nanostructures are developed, and the influence of the AlN buffer layer (temperature modulation) on material characteristics and optoelectronic device application is assessed. The AlN buffer layer was grown on a Si (111) substrate at varying temperatures (770–830 °C), followed by GaN growth using plasma-assisted molecular beam epitaxy. The investigation revealed that the comparatively lower temperature AlN buffer layer was responsible for stress and lattice strain relaxation and was realized as the GaN nano-obelisk structures. Contrarily, the increased temperature of the AlN growth led to the formation of GaN nanopyramidal and nanowax/wane structures. These grown GaN/AlN/Si heterostructures were utilized to develop photodetectors in a metal–semiconductor–metal geometry format. The performance of these fabricated optoelectronic devices was examined under ultraviolet illumination (UVA), where the GaN nano-obelisks-based device attained the highest responsivity of 118 AW−1. Under UVA (325 nm) illumination, the designed device exhibited a high detectivity of 1 × 1010 Jones, noise equivalent power of 1 × 10−12 WHz−1/2, and external quantum efficiency of 45,000%. The analysis revealed that the quality of the AlN buffer layer significantly improved the optoelectronic performance of the device.
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(This article belongs to the Special Issue Feature Papers of Electronic Materials II)
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Open AccessFeature PaperArticle
Indirect Evaluation of the Electrocaloric Effect in PbZrTiO3 (20/80)-Based Epitaxial Thin Film Structures
by
, , , , , , and
Electron. Mater. 2022, 3(4), 344-356; https://doi.org/10.3390/electronicmat3040028 - 01 Nov 2022
Abstract
Electrocaloric effect is the adiabatic temperature change in a dielectric material when an electric field is applied or removed, and it can be considered as an alternative refrigeration method. Materials with ferroelectric order exhibit large temperature variations in the vicinity of a phase
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Electrocaloric effect is the adiabatic temperature change in a dielectric material when an electric field is applied or removed, and it can be considered as an alternative refrigeration method. Materials with ferroelectric order exhibit large temperature variations in the vicinity of a phase transition, while antiferroelectrics and relaxors may exhibit a negative electrocaloric effect. In this study, the temperature variation in polarization was investigated for epitaxial ferroelectric thin film structures based on PbZrTiO3 materials in simple or complex multilayered structures. We propose the intriguing possibility of a giant negative electrocaloric effect (ΔT = −3.7 K at room temperature and ΔT = −5.5 K at 370 K) in a simple epitaxial Pb(ZrTi)O3 capacitor. Furthermore, it was shown that abnormal temperature variation in polarization is dependent on the non-FE component introduced in a multilayered structure. No significant variation in polarization with temperature was obtained for PZT/STON multilayered structures around room temperature. However, for PZT/BST or PZT/Nb2O5 multilayers, an abnormal temperature variation in polarization was revealed, which was similar to a simple PZT layer. The giant and negative ∆T values were attributed to internal fields and defects formed due to the large depolarization fields when the high polarization of the FE component was not fully compensated either by the electrodes or by the interface with an insulator layer. The presented results make Pb(ZrTi)O3-based structures promising for cooling applications operating near room temperature.
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(This article belongs to the Special Issue Electronic Processes in Ferroelectrics)
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Open AccessArticle
Effect of Carrier Gas Flow Rates on the Structural and Optical Properties of ZnO Films Deposited Using an Aerosol Deposition Technique
by
, , , , , and
Electron. Mater. 2022, 3(4), 332-343; https://doi.org/10.3390/electronicmat3040027 - 31 Oct 2022
Cited by 1
Abstract
Aerosol deposition (AD) is a simple, dry raw-powder deposition process in which the targeted film is formed by direct bombardment of accelerated starting powder onto the substrate surface at room temperature. Despite the increased interest in AD film formation, no work has been
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Aerosol deposition (AD) is a simple, dry raw-powder deposition process in which the targeted film is formed by direct bombardment of accelerated starting powder onto the substrate surface at room temperature. Despite the increased interest in AD film formation, no work has been completed to systematically investigate the formation of dense zinc oxide (ZnO) films using the AD method and their optical properties. Therefore, this study was carried out to investigate the effect of AD gas flow rate on the formation of AD films and the optical properties of aerosol-deposited ZnO films. ZnO films with nanosized (<40 nm) crystallites were successfully deposited on FTO substrates at room temperature. A dense and uniform layer of aerosol-deposited ZnO films with a roughened surface was obtained without subsequent heat treatment. With the increase in the AD gas flow rate, the crystal size and the AD film’s thickness were reduced. The Raman spectroscopy verified that the thin film was of a ZnO wurtzite structure. The room temperature photoluminescence of the ZnO thin film produced strong visible emissions. The findings of this work demonstrated that AD can be an alternative technique for the rapid deposition of dense and thick ZnO films for optoelectronic applications.
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(This article belongs to the Special Issue Feature Papers of Electronic Materials II)
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Open AccessReview
Textile Materials for Wireless Energy Harvesting
Electron. Mater. 2022, 3(4), 301-331; https://doi.org/10.3390/electronicmat3040026 - 08 Oct 2022
Cited by 1
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Wireless energy harvesting, a technique to generate direct current (DC) electricity from ambient wireless signals, has recently been featured as a potential solution to reduce the battery size, extend the battery life, or replace batteries altogether for wearable electronics. Unlike other energy harvesting
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Wireless energy harvesting, a technique to generate direct current (DC) electricity from ambient wireless signals, has recently been featured as a potential solution to reduce the battery size, extend the battery life, or replace batteries altogether for wearable electronics. Unlike other energy harvesting techniques, wireless energy harvesting has a prominent advantage of ceaseless availability of ambient signals, but the common form of technology involves a major challenge of limited output power because of a relatively low ambient energy density. Moreover, the archetypal wireless energy harvesters are made of printed circuit boards (PCBs), which are rigid, bulky, and heavy, and hence they are not eminently suitable for body-worn applications from both aesthetic and comfort points of view. In order to overcome these limitations, textile-based wireless energy harvesting architectures have been proposed in the past decade. Being made of textile materials, this new class of harvesters can be seamlessly integrated into clothing in inherently aesthetic and comfortable forms. In addition, since clothing offers a large surface area, multiple harvesting units can be deployed to enhance the output power. In view of these unique and irreplaceable benefits, this paper reviews key recent progress in textile-based wireless energy harvesting strategies for powering body-worn electronics. Comparisons with other power harvesting technologies, historical development, fundamental principles of operation and techniques for fabricating textile-based wireless power harvesters are first recapitulated, followed by a review on the principal advantages, challenges, and opportunities. It is one of the purposes of this paper to peruse the current state-of-the-art and build a scientific knowledge base to aid further advancement of power solutions for wearable electronics.
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Open AccessArticle
Thermal Annealing Effect on the Structure, Optical and Electrical Properties of Lanthanum Manganite Thin Films Prepared by Reactive Co-Sputtering
by
, , , , and
Electron. Mater. 2022, 3(4), 291-300; https://doi.org/10.3390/electronicmat3040025 - 30 Sep 2022
Abstract
Lanthanum manganite (LMO) thin films were deposited by co-sputtering La and Mn targets in an Ar and O2 gas mixture. The films were synthesized on silicon and fused silica substrates. The influences of thermal annealing on the structure, optical and electrical properties
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Lanthanum manganite (LMO) thin films were deposited by co-sputtering La and Mn targets in an Ar and O2 gas mixture. The films were synthesized on silicon and fused silica substrates. The influences of thermal annealing on the structure, optical and electrical properties of LMO films were investigated. The results exhibited a correlation between these properties. In the amorphous state, an increase in annealing temperature improved the optical transmission and decreased the electrical capacitance. The beginning of crystallization at 600 °C was manifested by a strong increase in the capacitance and a decrease in the optical transmission. At higher annealing temperature, polycrystalline films were obtained with different optical and electrical characteristics. On the other hand, the annealed LMO films showed a photocurrent effect during exposure to a weak LED light.
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(This article belongs to the Special Issue Metal Oxide Semiconductors for Electronic Applications)
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Open AccessFeature PaperArticle
Direct Comparison of the Effect of Processing Conditions in Electrolyte-Gated and Bottom-Gated TIPS-Pentacene Transistors
by
, , , , and
Electron. Mater. 2022, 3(4), 281-290; https://doi.org/10.3390/electronicmat3040024 - 27 Sep 2022
Cited by 1
Abstract
Among the plethora of soluble and easy processable organic semiconductors, 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-P5) is one of the most promising materials for next-generation flexible electronics. However, based on the information reported in the literature, it is difficult to exploit in field-effect transistors the high-performance characteristics
[...] Read more.
Among the plethora of soluble and easy processable organic semiconductors, 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-P5) is one of the most promising materials for next-generation flexible electronics. However, based on the information reported in the literature, it is difficult to exploit in field-effect transistors the high-performance characteristics of this material. This article correlates the HMDS functionalization of the silicon substrate with the electrical characteristics of TIPS-P5-based bottom gate organic field-effect transistors (OFETs) and electrolyte-gated organic field-effect transistors (EGOFETs) fabricated over the same platform. TIPS-P5 transistors with a double-gate architecture were fabricated by simple drop-casting on Si/SiO2 substrates, and the substrates were either functionalized with hexamethyldisilazane (HMDS) or left untreated. The same devices were characterized both as standard bottom-gate transistors and as (top-gate) electrolyte-gated transistors, and the results with and without HMDS treatment were compared. It is shown that the functionalization of the silicon substrate negatively influences EGOFETs performance, while it is beneficial for bottom-gate OFETs. Different device architectures (e.g., bottom-gate vs. top-gate) require specific evaluation of the fabrication protocols starting from the effect of the HMDS functionalization to maximize the electrical characteristics of TIPS-P5-based devices.
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(This article belongs to the Special Issue Feature Papers of Electronic Materials II)
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Characterization of Organic Conductive Materials as an Ecological Solution for RF Applications
Electron. Mater. 2022, 3(4), 265-280; https://doi.org/10.3390/electronicmat3040023 - 26 Sep 2022
Cited by 1
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The use of nonmetallic conductor materials in RF applications has recently become a highlighted issue when it comes to sustainability in the electronics industry, mainly because of the waste problems associated with heavy metals and the necessity of reducing and managing them. The
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The use of nonmetallic conductor materials in RF applications has recently become a highlighted issue when it comes to sustainability in the electronics industry, mainly because of the waste problems associated with heavy metals and the necessity of reducing and managing them. The replacement of metal in functional applications such as in electronics is therefore very important. Among these new materials, organic conductors are of great interest since they are, in general, biocompatible and biodegradable, allowing for the disposal of electronic devices, which reduces the negative environment impact caused by electronics waste. In this work, PEDOT:PSS and Carbon are investigated. Since these materials are available as conducting pastes or inks, the production of conducting patterns by printing techniques such as screen printing is possible, which can make the process less harmful to the environment, since it permits the use of organic substrates such as paper. In order to investigate the feasibility of these materials for RF signal transmission, screen printed PEDOT:PSS and Carbon transmission lines have been designed, fabricated and characterized. Results regarding conductivity, thickness, electric permittivity and S21 parameter are presented and will serve as a foundation for the development of further reaching applications utilizing organic materials.
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Open AccessEditorial
Characterization of Electronic Materials
Electron. Mater. 2022, 3(3), 263-264; https://doi.org/10.3390/electronicmat3030022 - 14 Sep 2022
Cited by 1
Abstract
Electronic materials are of great interest due to their potential to be applied in a broad range of important electronic devices including transistors, sensors, solar cells and others [...]
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(This article belongs to the Special Issue Feature Papers of Electronic Materials II)
Open AccessArticle
A Study on the Optimization of the Conductive Ball Manufacturing Process, Used for Anisotropic Conductive Films
Electron. Mater. 2022, 3(3), 252-262; https://doi.org/10.3390/electronicmat3030021 - 19 Aug 2022
Abstract
Currently, as the next-generation of display progresses—with high performance and high integration—the surface mounting technology of components is very important. In particular, in the case of flexible displays, such as rollable and bendable displays, ACF that connects wires to any curvature is essential.
[...] Read more.
Currently, as the next-generation of display progresses—with high performance and high integration—the surface mounting technology of components is very important. In particular, in the case of flexible displays, such as rollable and bendable displays, ACF that connects wires to any curvature is essential. However, the conductive ball used inside the ACF has had problems with particle size and non-uniform metal coating. It was confirmed that the presence of solvent and oxygen, which are used in polymer synthesis, affects the sphere formation of polymer beads. By optimizing the factors affecting the polymer beads, a perfect spherical polymer bead was manufactured. In addition, the conductive ball manufacturing process was optimized by confirming the factors affecting the metal coating. The metal coating on the surface of the polymer bead was applied with a uniform thickness by considering the specific surface area and concentration of the conductive balls, and, through this optimized process, conductive balls for anisotropic conductive films with uniform size and metal thickness were obtained.
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(This article belongs to the Special Issue Feature Papers of Electronic Materials II)
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Progress in Hexagonal Boron Nitride (h-BN)-Based Solid-State Neutron Detector
by
and
Electron. Mater. 2022, 3(3), 235-251; https://doi.org/10.3390/electronicmat3030020 - 03 Aug 2022
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This article will briefly review the progress of h-BN based solid-state metal semiconductor metal (MSM) neutron detectors. In the last decade, several groups have been working on hexagonal boron nitride (h-BN)-based solid-state neutron detectors. Recently, the detection efficiency of 59% has been reported.
[...] Read more.
This article will briefly review the progress of h-BN based solid-state metal semiconductor metal (MSM) neutron detectors. In the last decade, several groups have been working on hexagonal boron nitride (h-BN)-based solid-state neutron detectors. Recently, the detection efficiency of 59% has been reported. Efficient, low-cost neutron detectors made from readily available materials are essential for various applications. Neutron detectors are widely used to detect fissile materials and nuclear power plants for security applications. The most common and widely used neutron detectors are 3He based, which are sometimes bulky, difficult to transport, have high absorption length, need relatively high bias voltage (>1000 V), and have low Q-value (0.764 MeV). In addition, 3He is not a readily available material. Thus, there is a strong need to find an alternative detection material. The 10B isotope has a high neutron absorption cross-section, and it has been tested as a coating on the semiconducting materials. Due to the two-step process, neutron capture through 10B and then electron–hole pair generation in a typical semiconducting material, the efficiency of these devices is not up to the mark. The progress in h-BN based detectors requires a review to envision the further improvement in this technology.
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Open AccessArticle
Tunnel Spin-Polarization of Ferromagnetic Metals and Ferrimagnetic Oxides and Its Effect on Tunnel Magnetoresistance
Electron. Mater. 2022, 3(3), 227-234; https://doi.org/10.3390/electronicmat3030019 - 28 Jul 2022
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This work presents an examination and unification of fragmented data on spin polarization in half-metallic, ferrimagnetic oxides. It also includes well understood ferromagnetic metals for comparison. The temperature and disorder dependencies of the spin polarization are evaluated. Both the temperature dependence of the
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This work presents an examination and unification of fragmented data on spin polarization in half-metallic, ferrimagnetic oxides. It also includes well understood ferromagnetic metals for comparison. The temperature and disorder dependencies of the spin polarization are evaluated. Both the temperature dependence of the tunnel magnetoresistance and, for the very first time, its temperature coefficient are calculated based on the simplified Julliére model. The tunnel magnetoresistance in the magnetic tunnel junctions deteriorates due to the temperature dependence of the spin polarization the lower the Curie temperature is. As a result, magnetic tunnel junctions—consisting of ferromagnetic oxides with a Curie temperature not far above room temperature—are not promising for room temperature applications. Additionally, ferrimagnetic oxides possessing a Curie temperature below 650 K are not suitable for room temperature applications because of an unacceptable temperature coefficient exceeding −2%.
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Prototyping and Evaluation of Graphene-Based Piezoresistive Sensors
by
, , , , , and
Electron. Mater. 2022, 3(3), 218-226; https://doi.org/10.3390/electronicmat3030018 - 22 Jun 2022
Cited by 1
Abstract
In this work, the electrical properties of graphene papers were investigated with the aim of developing pressure sensor prototypes for measuring pressures up to 2 kPa. In order to determine which graphene paper would be the most suitable, three different types of graphene
[...] Read more.
In this work, the electrical properties of graphene papers were investigated with the aim of developing pressure sensor prototypes for measuring pressures up to 2 kPa. In order to determine which graphene paper would be the most suitable, three different types of graphene papers, synthesized by different routes, were prepared and electrically characterized. The results of electrical characterizations, in terms of electrical conductivity and sheet resistance of graphene papers, are presented and discussed. Prototypes of pressure sensors are proposed, using graphene papers obtained by chemical oxidation (graphene oxide and reduced graphene oxide) and by electrochemical exfoliation. The prototypes were tested in static compression/decompression tests in the working range of 0 kPa to 1.998 kPa. The compression/decompression sensitivity values observed in these prototype sensors ranged from 20.8% ΔR/kPa for graphene sensors obtained by electrochemical exfoliation to 110.7% ΔR/kPa for those prepared from graphene oxide obtained by chemical oxidation. More expressive sensitivity values were observed for the sensors fabricated from GO, intermediate values for those made of rGO, while prototypes made of EG showed lower sensitivity.
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(This article belongs to the Topic Application of Graphene-Based Materials)
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Multi-Objective Bayesian Optimization of Lithium-Ion Battery Cells for Electric Vehicle Operational Scenarios
Electron. Mater. 2022, 3(2), 201-217; https://doi.org/10.3390/electronicmat3020017 - 31 May 2022
Cited by 2
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The development of lithium-ion batteries (LIBs) based on current practice allows an energy density increase estimated at 10% per year. However, the required power for portable electronic devices is predicted to increase at a much faster rate, namely 20% per year. Similarly, the
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The development of lithium-ion batteries (LIBs) based on current practice allows an energy density increase estimated at 10% per year. However, the required power for portable electronic devices is predicted to increase at a much faster rate, namely 20% per year. Similarly, the global electric vehicle battery capacity is expected to increase from around 170 GWh per year today to 1.5 TWh per year in 2030—this is an increase of 125% per year. Without a breakthrough in battery design technology, it will be difficult to keep up with their increasing energy demand. The objective of this investigation is to develop a design methodology to accelerate the LIB development through the integration of electro-chemical numerical simulations and machine learning algorithms. In this work, the Gaussian process (GP) regression model is used as a fast approximation of numerical simulation (conducted using Simcenter Battery Design Studio®). The GP regression models are systematically updated through a multi-objective Bayesian optimization algorithm, which enables the exploration of innovative designs as well as the determination of optimal configurations. The results reported in this work include optimal thickness and porosities of LIB electrodes for several practical charge–discharge scenarios which maximize energy density and minimize capacity fade.
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