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Electronic Materials
Volume 5
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Electron. Mater., Volume 5, Issue 1 (March 2024) – 3 articles

Cover Story (view full-size image): Advancing memory technology is crucial as digitalization and computing demand surge. ReRAM crossbar arrays integrated with IMT selectors represent a significant leap in non-volatile memory, offering high-density storage and lower power consumption. IMT selectors are excellent in managing data flow and mitigating sneak path currents, elevating ReRAM's reliability and efficiency. The steep I-V characteristics of IMT materials mean that small changes in voltage can lead to large changes in current, requiring models that can precisely capture this behavior. Additionally, the nonlinearity of IMT materials introduces complexity in simulating their response under various operating conditions. The focus on creating effective compact models for IMT selectors represents a significant stride toward improving and innovating future memory solutions. View this paper
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15 pages, 4567 KiB  
Article
Enhancement of Photo-Electrical Properties of CdS Thin Films: Effect of N2 Purging and N2 Annealing
by Gayan K. L. Sankalpa, Gayan R. K. K. G. R. Kumarasinghe, Buddhika S. Dassanayake and Gayan W. C. Kumarage
Electron. Mater. 2024, 5(1), 30-44; https://doi.org/10.3390/electronicmat5010003 - 13 Mar 2024
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Abstract
The impact of N2 purging in the CdS deposition bath and subsequent N2 annealing is examined and contrasted with conventional CdS films, which were deposited without purging and annealed in ambient air. All films were fabricated using the chemical bath deposition [...] Read more.
The impact of N2 purging in the CdS deposition bath and subsequent N2 annealing is examined and contrasted with conventional CdS films, which were deposited without purging and annealed in ambient air. All films were fabricated using the chemical bath deposition method at a temperature of 80 °C on fluorine-doped tin oxide glass slides (FTO). N2 purged films were deposited by introducing nitrogen gas into the deposition bath throughout the CdS deposition process. Subsequently, both N2 purged and un-purged films underwent annealing at temperatures ranging from 100 to 500 °C for one hour, either in a nitrogen or ambient air environment. Photoelectrochemical (PEC) cell studies reveal that films subjected to both N2 purging and N2 annealing exhibit a notable enhancement of 37.5% and 27% in ISC (short-circuit current) and VOC (open-circuit voltage) values, accompanied by a 5% improvement in optical transmittance compared to conventional CdS thin films. The films annealed at 300 °C demonstrate the highest ISC, VOC, and VFB values, 55 μA, 0.475 V, and −675 mV, respectively. The improved optoelectrical properties in both N2-purged and N2-annealed films are attributed to their well-packed structure, enhanced interconnectivity, and a higher sulfur to cadmium ratio of 0.76 in the films. Full article
(This article belongs to the Topic Optoelectronic Materials, 2nd Volume)
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13 pages, 5579 KiB  
Article
Insulator Metal Transition-Based Selector in Crossbar Memory Arrays
by Mahmoud Darwish and László Pohl
Electron. Mater. 2024, 5(1), 17-29; https://doi.org/10.3390/electronicmat5010002 - 23 Feb 2024
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Abstract
This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology. We highlight ReRAM’s competitive edge over NAND, NOR Flash, and phase-change memory (PCM), particularly in terms of endurance, speed, and energy efficiency. This [...] Read more.
This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology. We highlight ReRAM’s competitive edge over NAND, NOR Flash, and phase-change memory (PCM), particularly in terms of endurance, speed, and energy efficiency. This paper focuses on the architecture of crossbar arrays, where memristive devices are positioned at intersecting metal wires. We emphasize the unique resistive switching mechanisms of memristors and the challenges of sneak path currents and delve into the roles and configurations of selectors, particularly focusing on the one-selector one-resistor (1S1R) architecture with an insulator–metal transition (IMT) based selector. We use SPICE simulations based on defined models to examine a 3 × 3 1S1R ReRAM array with vanadium dioxide selectors and titanium dioxide film memristors, assessing the impact of ambient temperature and critical IMT temperatures on array performance. We highlight the operational regions of low resistive state (LRS) and high resistive state (HRS), providing insights into the electrical behavior of these components under various conditions. Lastly, we demonstrate the impact of selector presence on sneak path currents. This research contributes to the overall understanding of ReRAM crossbar arrays integrated with IMT material-based selectors. Full article
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16 pages, 2897 KiB  
Article
Nanogranular Strontium Ferromolybdate/Strontium Molybdate Ceramics—A Magnetic Material Possessing a Natural Core-Shell Structure
by Gunnar Suchaneck, Evgenii Artiukh, Nikolay Kalanda, Marta Yarmolich and Gerald Gerlach
Electron. Mater. 2024, 5(1), 1-16; https://doi.org/10.3390/electronicmat5010001 - 31 Jan 2024
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Abstract
In this work, we demonstrate the preparation of easy-to-fabricate nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics and examine their properties, including tunnel magnetoresistance, magnetic field sensitivity, and temperature coefficient of the tunnel magnetoresistance. The tunnel magnetoresistance of nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics was [...] Read more.
In this work, we demonstrate the preparation of easy-to-fabricate nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics and examine their properties, including tunnel magnetoresistance, magnetic field sensitivity, and temperature coefficient of the tunnel magnetoresistance. The tunnel magnetoresistance of nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics was modeled, yielding values suitable for magnetoresistive sensor applications. Such structures possess a narrow peak of magnetic flux sensibility located at about 80 mT. For magnetic flux measurement, single-domain granules with superparamagnetic behavior should be applied. The predicted TMR magnetic flux sensitivities for granules with superparamagnetic behavior amount to about 7.7% T−1 and 1.5% T−1 for granule sizes of 3 nm and 5 nm, respectively. A drawback of the tunnel magnetoresistance of such nanogranular core-shell ceramics is the unacceptably large value of the temperature coefficient. Acceptable values, lower than 2% K−1, are obtained only at low temperatures (less than 100 K) or large magnetic flux densities (exceeding 6 T). Therefore, a Wheatstone bridge configuration should be adopted for magnetoresistive sensor design to compensate for the effect of temperature. Full article
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