Topic Editors

Department of Chemical Engineering and Materials Engineering, National Yunlin University of Science and Technology, Yunlin 64002, Taiwan
Lyon Institute of Nanotechnology, UMR 5270, INSA de Lyon, 69100 Villeurbanne, France
Dr. Regis Orobtchouk
Institut des Nanotechnologies de Lyon, Université de Lyon, INSA Lyon, CNRS, UMR 5270, Lyon, France

Optoelectronic Materials, 2nd Volume

Abstract submission deadline
30 July 2024
Manuscript submission deadline
30 September 2024
Viewed by
1858

Topic Information

Dear Colleagues,

Optoelectronic materials have been developed for almost a century since studies of their optical and electronic properties were first reported in the 1910s. In the 1960s and 1970s, interest in optoelectronic materials was intensified because of the discovery of electroluminescence in conducting polymers and molecular crystals. Moreover, there has been a real surge in interest in the organic and inorganic field of these materials over the past 20 years because of significant improvements in material design and purification, which resulted in dramatic improvements in material performance. Currently, optoelectronic materials are receiving extensive attention for their applications in electronic and optoelectronic devices, such as light-emitting diodes (LEDs or OLEDs), photorefractive (PR) devices, sensors, solar cells, thin-film transistors, etc. Of particular technological interest are low-cost solution-processed thin films that can be deposited on large areas and/or flexible substrates. Understanding the physical–chemical properties of these materials is crucial in the development of high-performance optoelectronic devices. The goals of this Topic are to provide a balanced assessment of the current understanding of the physical mechanisms that determine the optoelectronic properties of high-performance organic–inorganic materials, highlight the capabilities of various experimental techniques to characterize these materials, summarize the most important in-line device performance, and outline recent trends in the further development of the field. This Topic focuses on photoinduced processes and electronic properties for optoelectronic applications that rely on charge carrier photogeneration. Electronic applications (e.g., OFETs or spintronic devices) and optoelectronic applications (e.g., OLEDs) that do not rely on photogenerated charge generation, as well as photonic applications (e.g., exciton–photon coupling in microcavities), are also welcome in this Topic. We invite you to submit feature articles (or review papers) on the Topic “Optoelectronic Materials”. We are seeking original contributions focusing on, but not limited to, the following (or related) subtopics:

  • Charge transport mechanisms in optoelectronic materials;
  • Synthesis of organic and inorganic materials for optoelectronic applications;
  • Theoretical and experimental methods in optoelectronic materials;
  • High-mobility conjugated polymers;
  • Photonic and electronic processes and interfacial phenomena in organic–inorganic hybrid materials;
  • Emerging materials for optoelectronics;
  • New insights of optical materials for optoelectronic applications;
  • New photonic concepts to enhance the efficiency of optoelectronic materials;
  • Heterogeneous integration of material on silicon platform.

Prof. Dr. Tzi-yi Wu
Dr. Ali Belarouci
Dr. Regis Orobtchouk
Topic Editors

Keywords

  • optoelectronic performance of polymers
  • organic synthesis of optoelectronic polymers
  • synthesis of photoactive and electroactive polymers
  • synthesis and application of smart organic–inorganic materials
  • phase change materials
  • conjugated polymers
  • organometallic polymers
  • molecular engineering of optoelectronic polymers
  • optical, electrochemical, and physicochemical characterizations of optoelectronic polymers
  • micro-nanophotonics

Participating Journals

Journal Name Impact Factor CiteScore Launched Year First Decision (median) APC
Applied Sciences
applsci
2.7 4.5 2011 16.9 Days CHF 2400 Submit
Crystals
crystals
2.7 3.6 2011 10.6 Days CHF 2600 Submit
Electronic Materials
electronicmat
- - 2020 17 Days CHF 1000 Submit
Nanomaterials
nanomaterials
5.3 7.4 2011 13.6 Days CHF 2900 Submit
Polymers
polymers
5.0 6.6 2009 13.7 Days CHF 2700 Submit

Preprints.org is a multidiscipline platform providing preprint service that is dedicated to sharing your research from the start and empowering your research journey.

MDPI Topics is cooperating with Preprints.org and has built a direct connection between MDPI journals and Preprints.org. Authors are encouraged to enjoy the benefits by posting a preprint at Preprints.org prior to publication:

  1. Immediately share your ideas ahead of publication and establish your research priority;
  2. Protect your idea from being stolen with this time-stamped preprint article;
  3. Enhance the exposure and impact of your research;
  4. Receive feedback from your peers in advance;
  5. Have it indexed in Web of Science (Preprint Citation Index), Google Scholar, Crossref, SHARE, PrePubMed, Scilit and Europe PMC.

Published Papers (2 papers)

Order results
Result details
Journals
Select all
Export citation of selected articles as:
13 pages, 3590 KiB  
Article
Study of Multi-Channel Mode-Division Multiplexing Based on a Chalcogenide-Lithium Niobate Platform
Crystals 2024, 14(1), 73; https://doi.org/10.3390/cryst14010073 - 11 Jan 2024
Viewed by 643
Abstract
A multi-channel mode-division multiplexing based on a chalcogenide-lithium niobate platform using chalcogenide films with adjustable refractive index is proposed, with the aim of overcoming issues with narrow bandwidth and large crosstalk in conventional multiplexers. An asymmetric directional coupler, employing chalcogenide-based thin-film modulation, was [...] Read more.
A multi-channel mode-division multiplexing based on a chalcogenide-lithium niobate platform using chalcogenide films with adjustable refractive index is proposed, with the aim of overcoming issues with narrow bandwidth and large crosstalk in conventional multiplexers. An asymmetric directional coupler, employing chalcogenide-based thin-film modulation, was designed to realize the multiplexing and separation of TE1, TE2, and TE3 modes. Simulations show that the device is capable of obtaining an insertion loss of between 0.03 dB and 0.7 dB and a crosstalk of between −21.66 dB and −28.71 dB at 1550 nm. The crosstalk of the TE1, TE2, and TE3 modes is below −20.1 dB when accessing the waveguide output port in the 1500–1600 nm band. The proposed multiplexer is a promising approach to enhance the transmission capability of thin-film lithium-niobate-integrated optical paths. Full article
(This article belongs to the Topic Optoelectronic Materials, 2nd Volume)
Show Figures

Figure 1

12 pages, 3524 KiB  
Article
Structural, Optical, Electrical, and Thermoelectric Properties of Bi2Se3 Films Deposited at a High Se/Bi Flow Rate
Nanomaterials 2023, 13(20), 2785; https://doi.org/10.3390/nano13202785 - 18 Oct 2023
Viewed by 793
Abstract
Low-temperature synthesis of Bi2Se3 thin film semiconductor thermoelectric materials is prepared by the plasma-enhanced chemical vapor deposition method. The Bi2Se3 film demonstrated excellent crystallinity due to the Se-rich environment. Experimental results show that the prepared Bi2 [...] Read more.
Low-temperature synthesis of Bi2Se3 thin film semiconductor thermoelectric materials is prepared by the plasma-enhanced chemical vapor deposition method. The Bi2Se3 film demonstrated excellent crystallinity due to the Se-rich environment. Experimental results show that the prepared Bi2Se3 film exhibited 90% higher transparency in the mid-IR region, demonstrating its potential as a functional material in the atmospheric window. Excellent mobility of 2094 cm2/V·s at room temperature is attributed to the n-type conductive properties of the film. Thermoelectrical properties indicate that with the increase in Se vapor, a slight decrease in conductivity of the film is observed at room temperature with an obvious increase in the Seebeck coefficient. In addition, Bi2Se3 thin film showed an enhanced power factor of as high as 3.41 μW/cmK2. Therefore, plasma-enhanced chemical vapor deposition (PECVD)-grown Bi2Se3 films on Al2O3 (001) substrates demonstrated promising thermoelectric properties. Full article
(This article belongs to the Topic Optoelectronic Materials, 2nd Volume)
Show Figures

Figure 1

Back to TopTop