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Electronic Materials
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Metal Oxide Semiconductors for Electronic Applications
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Metal Oxide Semiconductors for Electronic Applications

A special issue of Electronic Materials (ISSN 2673-3978).

Deadline for manuscript submissions: 30 June 2024 | Viewed by 4755

Special Issue Editors

Dr. Ana Rovisco

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Guest Editor
i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2829-516 Caparica, Portugal
Interests: multicomponent oxides; nanostructures; nanofabrication; nano-lithography (EBL); nanodevices; flexible and transparent technology; oxide thin film transistors; energy harvesting; multifunctionality; sustainability
Special Issues, Collections and Topics in MDPI journals
Dr. Jorge Martins

E-Mail Website
Guest Editor
i3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2829-516 Caparica, Portugal
Interests: TCAD simulation; oxide TFTs; flexible electronics; device physics; oxide thin films; oxide transistors; VCM memristors
Special Issues, Collections and Topics in MDPI journals
Dr. Asal Kiazadeh

E-Mail Website
Guest Editor
Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lis-boa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
Interests: IoT-memristor; thin film transistor; oxide electronic; paper electronic
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

New era concepts of Internet of things (IoT) and smart surfaces are now demanding transparent, flexible, and nanoscale devices and materials. In this regard, metal oxides have emerged as key materials, following from how metal oxide thin films, namely indium-gallium-zinc oxide (IGZO), were successfully applied for the backplanes technology. In fact, comparing with other technologies, such as polycrystalline/amorphous silicon, 2D transition metal dichalcogenides (TMDs) and graphene, metal oxides can be highly competitive since they present good reproducibility, large-area uniformity, and lower fabrication temperatures and costs, being compatible with flexible and transparent technology while still enabling good electrical and optical properties.

Moreover, metal oxide nanostructures have similarly been demonstrating excellent properties, and, while the implementation of nanostructures in devices and circuits still requires significant development, it would enable for very high levels of integrability and performance.

This Special Issue welcomes the submission of original papers and/or review articles focused on the fabrication of metal oxide semiconductors, in both the form of thin films or nanostructures, and their application in electronics.

Relevant topics may include (but are not limited to):

  • Metal oxide semiconductors characterization and fabrication;
  • Sustainable materials and processes;
  • Advances in the integration of metal oxide semiconductor nanostructures;
  • Transparent and flexible electronics;
  • Electronic devices such as field effect transistors, memristors, sensors, nanogenerators, and photodetectors;
  • Application of metal oxide semiconductors to electronic circuits or systems;
  • Devices’ modelling and simulation.

Dr. Ana Rovisco
Dr. Jorge Martins
Dr. Asal Kiazadeh
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronic Materials is an international peer-reviewed open access quarterly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • metal oxides
  • semiconductors
  • thin films
  • nanomaterials
  • transistors
  • memristors
  • optoelectronics

Published Papers (3 papers)

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Research

10 pages, 1847 KiB  
Communication
Theoretical Study of Doping in GaOOH for Electronics Applications
by Masaya Ichimura
Electron. Mater. 2023, 4(4), 148-157; https://doi.org/10.3390/electronicmat4040013 - 10 Nov 2023
Viewed by 649
Abstract
GaOOH, having a bandgap of 4.7–4.9 eV, can be regarded as one of several ultrawide-bandgap (UWBG) semiconductors, although it has so far mainly been used as a precursor material of Ga2O3. To examine the possibility of valence control and [...] Read more.
GaOOH, having a bandgap of 4.7–4.9 eV, can be regarded as one of several ultrawide-bandgap (UWBG) semiconductors, although it has so far mainly been used as a precursor material of Ga2O3. To examine the possibility of valence control and application in electronics, impurity levels in GaOOH are investigated using the first-principles density-functional theory calculation. The density values of the states of a supercell including an impurity atom are calculated. According to the results, among the group 14 elements, Si is expected to introduce a shallow donor level, i.e., a free electron is introduced. On the other hand, Ge and Sn introduce a localized state about 0.7 eV below the conduction band edge, and thus cannot act as an effective donor. While Mg and Ca can introduce a free hole and act as a shallow acceptor, Zn and Cd introduce acceptor levels away from the valence band. The transition metal elements (Fe, Co, Ni, Cu) are also considered, but none of them are expected to act as a shallow dopant. Thus, the results suggest that the carrier concentration can be controlled if Si is used for n-type doping, and Mg and Ca for p-type doping. Since GaOOH can be easily deposited using various chemical techniques at low temperatures, GaOOH will potentially be useful for transparent electronic devices. Full article
(This article belongs to the Special Issue Metal Oxide Semiconductors for Electronic Applications)
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18 pages, 3838 KiB  
Article
Modelling of Low-Voltage Varistors’ Responses under Slow-Front Overvoltages
by Lutendo Muremi, Pitshou N. Bokoro and Wesley Doorsamy
Electron. Mater. 2023, 4(2), 62-79; https://doi.org/10.3390/electronicmat4020006 - 09 May 2023
Viewed by 1427
Abstract
In this study, commercially low-voltage MOVs are exposed to switching surges to analyse and model the relationship between the number of surges and the MOV grain barrier height response. Repeated slow-front overvoltage transients are used to degrade the protective qualities of metal oxide [...] Read more.
In this study, commercially low-voltage MOVs are exposed to switching surges to analyse and model the relationship between the number of surges and the MOV grain barrier height response. Repeated slow-front overvoltage transients are used to degrade the protective qualities of metal oxide surge arrester devices, affecting their reliability and stability. A total of 360 MOVs with similar specifications from three different manufacturers are degraded under switching surges at a constant temperature of 60 °C. The reference voltage and C-V characteristics of MOVs are measured before and after the degradation process to analyse the MOVs’ conditions. Grain barrier heights are determined from the C-V characteristics curve. An F-statistical analysis is then applied to analyse the effects of number of surges on the grain barrier height. The T-test is used to assess the statistical difference between the tested groups. Linear regression analysis is then applied to model the relationship between the number of surges and MOV grain barrier height. The results obtained show that the number of surges has a significant impact on grain barrier height. MOV grain barrier height is found to decrease as the number of surges applied increases. Regression models obtained for the tested MOV groups across all three manufacturers agree and indicate that the reduction in grain barrier height results from an increased number of surges. Regression coefficients of a developed model indicate that for one surge applied, the MOV grain barrier height decreases by 0.024, 0.055, and 0.033 eV/cm for manufacturers X, Y, and Z, respectively. Therefore, there is a linear relationship between grain barrier height and the number of applied switching surges. Full article
(This article belongs to the Special Issue Metal Oxide Semiconductors for Electronic Applications)
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10 pages, 1973 KiB  
Article
Thermal Annealing Effect on the Structure, Optical and Electrical Properties of Lanthanum Manganite Thin Films Prepared by Reactive Co-Sputtering
by Wael Hourani, Christophe Rousselot, Kouamé Boko Joël-Igor N’Djoré, Alain Billard, Mohammad Arab Pour Yazdi and Younes Makoudi
Electron. Mater. 2022, 3(4), 291-300; https://doi.org/10.3390/electronicmat3040025 - 30 Sep 2022
Viewed by 1649
Abstract
Lanthanum manganite (LMO) thin films were deposited by co-sputtering La and Mn targets in an Ar and O2 gas mixture. The films were synthesized on silicon and fused silica substrates. The influences of thermal annealing on the structure, optical and electrical properties [...] Read more.
Lanthanum manganite (LMO) thin films were deposited by co-sputtering La and Mn targets in an Ar and O2 gas mixture. The films were synthesized on silicon and fused silica substrates. The influences of thermal annealing on the structure, optical and electrical properties of LMO films were investigated. The results exhibited a correlation between these properties. In the amorphous state, an increase in annealing temperature improved the optical transmission and decreased the electrical capacitance. The beginning of crystallization at 600 °C was manifested by a strong increase in the capacitance and a decrease in the optical transmission. At higher annealing temperature, polycrystalline films were obtained with different optical and electrical characteristics. On the other hand, the annealed LMO films showed a photocurrent effect during exposure to a weak LED light. Full article
(This article belongs to the Special Issue Metal Oxide Semiconductors for Electronic Applications)
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