Selected Papers from Taiwan Association for Academic Innovation, TAAI 2020

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (1 July 2021) | Viewed by 11402

Special Issue Editors

Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan
Interests: silicon thin-film solar cells; silicon heterojuction solar cells; PV systems design, evaluation, and diagonosis
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Prof. Fei Yu
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Guest Editor
College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China
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Department of Electrical Engineering, Kun Shan University, Tainan, Taiwan
Interests: deep ultraviolet light measurement; semiconductor optoelectronic components; thin film technology; solid state lighting
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Special Issue Information

Dear Colleagues,

On behalf of the Taiwan Association for Academic Innovation, we are pleased to welcome you to the 6th IEEE and 7th International Conference on Science, Education, Viable Engineering (ICSEVEN) 2020 on Nov. 5–8, 2020, Penghu, Taiwan (URL: http://www.taai.tw/icseven/).

Following the first ICSEVEN held in Guilin, China; the second in Kyoto, Japan; the third in Zhengzhou, China; the fourth in Ho Chi Minh, Vietnam; the fifth in Yinchuan, Ningxia, China, the conference continuously aims to foster the growth of research in energy engineering science and technology and its benefits to the community at large in the future. We hope that ICSEVEN 2020 will provide a great platform for academic and industry professionals to have fruitful discussions and to exchange new ideas about recent developments and the latest advances in the interdisciplinary field. It is our pleasure to announce the supportive participation of leading academics and researchers, in their respective areas of focus, from various countries, not only in, but also beyond Asia. We invite you to participate in this conference by submitting a paper reflecting your current research and to excel in solar energy-related R&D worldwide.

Participants of the conference are cordially invited to contribute original research papers or reviews to this Special Issue of Crystals.

Prof. Dr. Chien-Jung Huang
Prof. Dr. Yeu-Long Jiang
Prof. Fei Yu
Prof. Chun-Liang Lin
Guest Editors

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Keywords

  • solar cell and module technology
  • photovoltaics
  • crystallization and wafering of solar energy system
  • new materials for next generation solar cell

Published Papers (5 papers)

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Research

10 pages, 5043 KiB  
Article
Combined Implications of UV/O3 Interface Modulation with HfSiOX Surface Passivation on AlGaN/AlN/GaN MOS-HEMT
Crystals 2021, 11(2), 136; https://doi.org/10.3390/cryst11020136 - 28 Jan 2021
Cited by 8 | Viewed by 2698
Abstract
Surface passivation is critically important to improve the current collapse and the overall device performance in metal-oxide semiconductor high-electron mobility transistors (MOS-HEMTs) and, thus, their reliability. In this paper, we demonstrate the surface passivation effects in AlGaN/AlN/GaN-based MOS-HEMTs using ultraviolet-ozone (UV/O3) [...] Read more.
Surface passivation is critically important to improve the current collapse and the overall device performance in metal-oxide semiconductor high-electron mobility transistors (MOS-HEMTs) and, thus, their reliability. In this paper, we demonstrate the surface passivation effects in AlGaN/AlN/GaN-based MOS-HEMTs using ultraviolet-ozone (UV/O3) plasma treatment prior to SiO2 -gate dielectric deposition. X-ray photoelectron spectroscopy (XPS) was used to verify the improved passivation of the GaN surface. The threshold voltage (VTH) of the MOS-HEMT was shifted towards positive due to the band bending at the SiO2/GaN interface by UV/O3 surface treatment. In addition, the device performance, especially the current collapse, hysteresis, and 1/f characteristics, was further significantly improved with an additional 15 nm thick hafnium silicate (HfSiOX) passivation layer after the gate metallization. Due to combined effects of the UV/O3 plasma treatment and HfSiOX surface passivation, the magnitude of the interface trap density was effectively reduced, which further improved the current collapse significantly in SiO2-MOS-HEMT to 0.6% from 10%. The UV/O3-surface-modified, HfSiOX-passivated MOS-HEMT exhibited a decent performance, with IDMAX of 655 mA/mm, GMMAX of 116 mS/mm, higher ION/IOFF ratio of approximately 107, and subthreshold swing of 85 mV/dec with significantly reduced gate leakage current (IG) of 9.1 ×1010 A/mm. Full article
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10 pages, 3956 KiB  
Article
High Hydrogen Ion Concentration Causes a Blue Shift in Gold Nanoparticles
Crystals 2021, 11(2), 132; https://doi.org/10.3390/cryst11020132 - 28 Jan 2021
Viewed by 1395
Abstract
In this research, our team used a rare electrochemical method to obtain gold nanoparticles (GNPs). The growth solution has been added with nitric acid in order to observe the effect of GNPs. The solution also included cetyltrimethylammonium bromide (CTAB) and acetone. All reactions [...] Read more.
In this research, our team used a rare electrochemical method to obtain gold nanoparticles (GNPs). The growth solution has been added with nitric acid in order to observe the effect of GNPs. The solution also included cetyltrimethylammonium bromide (CTAB) and acetone. All reactions involved the oxidation of acetone and chain polymerization. Therefore, the GNPs changed to a su pramolecular structure. In addition, our team measured absorption wavelength via ultraviolet/ visible spectrophotometer and found an obviously blue shift. This short absorption wavelength is obviously different from other GNPs. Full article
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11 pages, 2808 KiB  
Article
Optimization of Tunnel Field-Effect Transistor-Based ESD Protection Network
Crystals 2021, 11(2), 128; https://doi.org/10.3390/cryst11020128 - 28 Jan 2021
Cited by 6 | Viewed by 1594
Abstract
The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network. In this paper, the ESD characteristics of a traditional point TFET, a line TFET and a [...] Read more.
The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network. In this paper, the ESD characteristics of a traditional point TFET, a line TFET and a Ge-source TFET are investigated using technology computer-aided design (TCAD) simulations, and an improved TFET-based whole-chip ESD protection scheme is proposed. It is found that the Ge-source TFET has a lower trigger voltage and higher failure current compared to the traditional point and line TFETs. However, the Ge-source TFET-based secondary path in the whole-chip ESD protection network is more vulnerable compared to the primary path due to the low thermal instability. Simulation results show that choosing the proper germanium mole fraction in the source region can balance the discharge ability and thermal failure risk, consequently enhancing the whole-chip ESD robustness. Full article
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10 pages, 5003 KiB  
Article
Effect of Annealing on Innovative CsPbI3-QDs Doped Perovskite Thin Films
Crystals 2021, 11(2), 101; https://doi.org/10.3390/cryst11020101 - 25 Jan 2021
Cited by 4 | Viewed by 2772
Abstract
In this study, a simple hot-injection method to synthesize high-quality inorganic perovskite cesium lead iodide (CsPbI3) quantum-dots (QDs) was demonstrated. Adding CsPbI3 QDs into the organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a [...] Read more.
In this study, a simple hot-injection method to synthesize high-quality inorganic perovskite cesium lead iodide (CsPbI3) quantum-dots (QDs) was demonstrated. Adding CsPbI3 QDs into the organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a composite perovskite film, annealed by different temperatures, was found to be effectively enhanced by the perovskite crystallization. The intensity of the preferred peak (110) of MAPbI3 was enhanced by increasing the size of the crystal and reducing the cluster crystal. The densest film can be found at annealing temperature of 140 °C. The full width half maximum of MAPbI3 and CsPbI3 was analyzed through XRD peak fitting. This was a huge breakthrough for QDs doped perovskite films. Full article
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11 pages, 4912 KiB  
Article
TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs
Crystals 2020, 10(11), 1059; https://doi.org/10.3390/cryst10111059 - 21 Nov 2020
Cited by 3 | Viewed by 2309
Abstract
For the first time, we investigated the electrostatic discharge (ESD) behavior of an InGaAs/InP heterojunction tunneling field effect transistor (HTFET). The device structure in this study has a high on-state current without extra process steps. Under the positive transmission line pulse (TLP) simulation, [...] Read more.
For the first time, we investigated the electrostatic discharge (ESD) behavior of an InGaAs/InP heterojunction tunneling field effect transistor (HTFET). The device structure in this study has a high on-state current without extra process steps. Under the positive transmission line pulse (TLP) simulation, the band-to-band tunneling (BTBT) current acts as an important initial current to accelerate the occurrence of impact ionization and the device is turned on quickly. Under the negative transmission line pulse (TLP) simulation, the operating principle of the HTFET is the same as for a poly-bounded diode. The ESD robustness of the device under TLP simulation are evaluated, and the impact factors, with regard to ESD robustness and failure mode, are discussed. Finally, the device behavior under very fast transmission line pulse (VFTLP) simulations with different rise times and pulse widths is also investigated. The results show that this device may be used for the ESD protection of next-generation III–V technology. Full article
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