Passivated, selective contacts in silicon solar cells consist of a double layer of highly doped polycrystalline silicon (poly Si) and thin interfacial silicon dioxide (SiO
2). This design concept allows for the highest efficiencies. Here, we report on a selective laser activation process, resulting in highly doped p
++-type poly Si on top of the SiO
2. In this double-layer structure, the p
++-poly Si layer serves as a layer for transporting the generated holes from the bulk to a metal contact and, therefore, needs to be highly conductive for holes. High boron-doping of the poly Si layers is one approach to establish the desired high conductivity. In a laser activation step, a laser pulse melts the poly Si layer, and subsequent rapid cooling of the Si melt enables electrically active boron concentrations exceeding the solid solubility limit. In addition to the high conductivity, the high active boron concentration in the poly Si layer allows maskless patterning of p
++-poly Si/SiO
2 layers by providing an etch stop layer in the Si etchant solution, which results in a locally structured p
++-poly Si/SiO
2 after the etching process. The challenge in the laser activation technique is not to destroy the thin SiO
2, which necessitates fine tuning of the laser process. In order to find the optimal processing window, we test laser pulse energy densities (
Hp) in a broad range of 0.7 J/cm
2 ≤
Hp ≤ 5 J/cm
2 on poly Si layers with two different thicknesses
dpoly Si,1 = 155 nm and
dpoly Si,2 = 264 nm. Finally, the processing window 2.8 J/cm
2≤
Hp ≤ 4 J/cm
2 leads to the highest sheet conductance (
Gsh) without destroying the SiO
2 for both poly Si layer thicknesses. For both tested poly Si layers, the majority of the symmetric lifetime samples processed using these
Hp achieve a good passivation quality with a high implied open circuit voltage (
iVOC) and a low saturation current density (
J0). The best sample achieves
iVOC = 722 mV and
J0 = 6.7 fA/cm
2 per side. This low surface recombination current density, together with the accompanying measurements of the doping profiles, suggests that the SiO
2 is not damaged during the laser process. We also observe that the passivation quality is independent of the tested poly Si layer thicknesses. The findings of this study show that laser-activated p
++-poly Si/SiO
2 are not only suitable for integration into advanced passivated contact solar cells, but also offer the possibility of maskless patterning of these stacks, substantially simplifying such solar cell production.
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