Submit to Materials Review for Materials Propose a Special Issue

Journal Menu

Journal Browser

► Journal Browser

Colloidal Quantum Dots for Nanophotonic Devices

Print Special Issue Flyer
Special Issue Editors
Special Issue Information
Keywords
Published Papers

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Quantum Materials".

Deadline for manuscript submissions: closed (20 April 2024) | Viewed by 13326

Share This Special Issue

Special Issue Editors

Prof. Dr. Menglu Chen

E-Mail Website
Guest Editor

School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
Interests: optoelectronics; infrared photodetection; colloidal quantum dot; semiconductors; low demensional materials; transport property

Prof. Dr. Qun Hao

E-Mail Website
Guest Editor

School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
Interests: laser interferometry; LIDAR; infrared imaging and detection; computational imaging
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Colloidal quantum dots (CQD) have become an important class of materials with great potential for applications such as biological medicine, electronic and optoelectronic devices, due to their unique advances of wide tunability of visible-to-infrared emission wavelength and low-cost solution-processibility. The performance of CQD-based photovoltaic and light-emitting devices has become competitive to other state-of-the-art materials. Narrow band semiconductor CQD also hold unique promise for near- and mid-infrared technologies, where very few semiconductor materials are available. Thus, new and in-depth insights in CQD growth, chemical transformations and physical properties would not only benefit the purely fundamental side but also commercialization.

This Special Issue aims to provide recent, informative, CQD-related resources for readers by addressing a broad range of topics from CQD materials chemistry and characterization to processing and device fabrication. It will focus on not only the synthesis of CQD, core/shell heterostructure, halide perovskite, surface functionalization, photophysical investigation, but also on their versatile applications such as photodetector, up/down-conversion devices, light-emitting diodes, solar cells, and biological labels.

We firmly believe that this collection will provide an opportunity to circulate innovative ideas and technologies on these emerging topics and contribute to the dissemination of expertise for young and leading researchers in the CQD-related field.

Prof. Dr. Menglu Chen
Prof. Dr. Qun Hao
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

optoelectronics
photodetection
colloidal quantum Dot
imaging
biological labels
up/down-conversion devices
QLED
halide perovskite
solar cells

Published Papers (10 papers)

Download All Papers

Order results

Result details

Show export options Show export options

Select all

Export citation of selected articles as:

Research

Jump to: Review

14 pages, 3767 KiB

Open AccessArticle

Spatial Shifts of Reflected Light Beam on Hexagonal Boron Nitride/Alpha-Molybdenum Trioxide Structure

by Song Bai, Yubo Li, Xiaoyin Cui, Shufang Fu, Sheng Zhou, Xuanzhang Wang and Qiang Zhang

Materials 2024, 17(7), 1625; https://doi.org/10.3390/ma17071625 - 02 Apr 2024

Viewed by 422

Abstract

This investigation focuses on the Goos–Hänchen (GH) and Imbert–Fedorov (IF) shifts on the surface of the uniaxial hyperbolic material hexagonal boron nitride (hBN) based on the biaxial hyperbolic material alpha-molybdenum (α-MoO₃) trioxide structure, where the anisotropic axis of hBN is rotated by an angle with respect to the incident plane. The surface with the highest degree of anisotropy among the two crystals is selected in order to analyze and calculate the GH- and IF-shifts of the system, and obtain the complex beam-shift spectra. The addition of α-MoO₃ substrate significantly amplified the GH shift on the system’s surface, as compared to silica substrate. With the p-polarization light incident, the GH shift can reach 381.76λ₀ at about 759.82 cm⁻¹, with the s-polarization light incident, the GH shift can reach 288.84λ₀ at about 906.88 cm⁻¹, and with the c-polarization light incident, the IF shift can reach 3.76λ₀ at about 751.94 cm⁻¹_. The adjustment of the IF shift, both positive and negative, as well as its asymmetric nature, can be achieved by manipulating the left and right circular polarization light and torsion angle. The aforementioned intriguing phenomena offer novel insights for the advancement of sensor technology and optical encoder design. Full article

(This article belongs to the Special Issue Colloidal Quantum Dots for Nanophotonic Devices)

► Show Figures

Figure 1

12 pages, 2909 KiB

Open AccessArticle

The Effect of the Solution Flow and Electrical Field on the Homogeneity of Large-Scale Electrodeposited ZnO Nanorods

by Yanmin Zhao, Kexue Li, Ying Hu, Xiaobing Hou, Fengyuan Lin, Jilong Tang, Xin Tang, Xida Xing, Xiao Zhao, Haibin Zhu, Xiaohua Wang and Zhipeng Wei

Materials 2024, 17(6), 1241; https://doi.org/10.3390/ma17061241 - 08 Mar 2024

Viewed by 474

Abstract

In this paper, we demonstrate the significant impact of the solution flow and electrical field on the homogeneity of large-scale ZnO nanorod electrodeposition from an aqueous solution containing zinc nitrate and ammonium nitrate, primarily based on the X-ray fluorescence results. The homogeneity can be enhanced by adjusting the counter electrode size and solution flow rate. We have successfully produced relatively uniform nanorod arrays on an 8 × 10 cm² i-ZnO-coated fluorine-doped tin oxide (FTO) substrate using a compact counter electrode and a vertical stirring setup. The as-grown nanorods exhibit similar surface morphologies and dominant, intense, almost uniform near-band-edge emissions in different regions of the sample. Additionally, the surface reflectance is significantly reduced after depositing the ZnO nanorods, achieving a moth-eye effect through subwavelength structuring. This effect of the nanorod array structure indicates that it can improve the utilization efficiency of light reception or emission in various optoelectronic devices and products. The large-scale preparation of ZnO nanorods is more practical to apply and has an extremely broad application value. Based on the research results, it is feasible to prepare large-scale ZnO nanorods suitable for antireflective coatings and commercial applications by optimizing the electrodeposition conditions. Full article

(This article belongs to the Special Issue Colloidal Quantum Dots for Nanophotonic Devices)

► Show Figures

Figure 1

11 pages, 6149 KiB

Open AccessArticle

Ultra-Smooth Polishing of Single-Crystal Silicon Carbide by Pulsed-Ion-Beam Sputtering of Quantum-Dot Sacrificial Layers

by Dongyang Qiao, Feng Shi, Ye Tian, Wanli Zhang, Lingbo Xie, Shuangpeng Guo, Ci Song and Guipeng Tie

Materials 2024, 17(1), 157; https://doi.org/10.3390/ma17010157 - 27 Dec 2023

Viewed by 848

Abstract

Single-crystal silicon carbide has excellent electrical, mechanical, and chemical properties. However, due to its high hardness material properties, achieving high-precision manufacturing of single-crystal silicon carbide with an ultra-smooth surface is difficult. In this work, quantum dots were introduced as a sacrificial layer in polishing for pulsed-ion-beam sputtering of single-crystal SiC. The surface of single-crystal silicon carbide with a quantum-dot sacrificial layer was sputtered using a pulsed-ion beam and compared with the surface of single-crystal silicon carbide sputtered directly. The surface roughness evolution of single-crystal silicon carbide etched using a pulsed ion beam was studied, and the mechanism of sacrificial layer sputtering was analyzed theoretically. The results show that direct sputtering of single-crystal silicon carbide will deteriorate the surface quality. On the contrary, the surface roughness of single-crystal silicon carbide with a quantum-dot sacrificial layer added using pulsed-ion-beam sputtering was effectively suppressed, the surface shape accuracy of the Ø120 mm sample was converged to 7.63 nm RMS, and the roughness was reduced to 0.21 nm RMS. Therefore, the single-crystal silicon carbide with the quantum-dot sacrificial layer added via pulsed-ion-beam sputtering can effectively reduce the micro-morphology roughness phenomenon caused by ion-beam sputtering, and it is expected to realize the manufacture of a high-precision ultra-smooth surface of single-crystal silicon carbide. Full article

(This article belongs to the Special Issue Colloidal Quantum Dots for Nanophotonic Devices)

► Show Figures

Figure 1

11 pages, 2063 KiB

Open AccessEditor’s ChoiceArticle

CH₃NH₃PbI₃/Au/Mg_0.2Zn_0.8O Heterojunction Self-Powered Photodetectors with Suppressed Dark Current and Enhanced Detectivity

by Meijiao Wang, Man Zhao and Dayong Jiang

Materials 2023, 16(12), 4330; https://doi.org/10.3390/ma16124330 - 12 Jun 2023

Viewed by 825

Abstract

Interface engineering of the hole transport layer in CH₃NH₃PbI₃ photodetectors has resulted in significantly increased carrier accumulation and dark current as well as energy band mismatch, thus achieving the goal of high-power conversion efficiency. However, the reported heterojunction perovskite photodetectors exhibit high dark currents and low responsivities. Herein, heterojunction self-powered photodetectors, composed of p-type CH₃NH₃PbI₃ and n-type Mg_0.2Zn_0.8O, are prepared through the spin coating and magnetron sputtering. The obtained heterojunctions exhibit a high responsivity of 0.58 A/W, and the EQE of the CH₃NH₃PbI₃/Au/Mg_0.2Zn_0.8O heterojunction self-powered photodetectors is 10.23 times that of the CH₃NH₃PbI₃/Au photodetectors and 84.51 times that of the Mg_0.2ZnO_0.8/Au photodetectors. The built-in electric field of the p-n heterojunction significantly suppresses the dark current and improves the responsivity. Remarkably, in the self-supply voltage detection mode, the heterojunction achieves a high responsivity of up to 1.1 mA/W. The dark current of the CH₃NH₃PbI₃/Au/Mg_0.2Zn_0.8O heterojunction self-powered photodetectors is less than 1.4 × 10⁻¹ pA at 0 V, which is more than 10 times lower than that of the CH₃NH₃PbI₃ photodetectors. The best value of the detectivity is as high as 4.7 × 10¹² Jones. Furthermore, the heterojunction self-powered photodetectors exhibit a uniform photodetection response over a wide spectral range from 200 to 850 nm. This work provides guidance for achieving a low dark current and high detectivity for perovskite photodetectors. Full article

(This article belongs to the Special Issue Colloidal Quantum Dots for Nanophotonic Devices)

► Show Figures

Figure 1

11 pages, 18529 KiB

Open AccessArticle

Efficient Environmentally Friendly Flexible CZTSSe/ZnO Solar Cells by Optimizing ZnO Buffer Layers

by Quanzhen Sun, Jianlong Tang, Caixia Zhang, Yaling Li, Weihao Xie, Hui Deng, Qiao Zheng, Jionghua Wu and Shuying Cheng

Materials 2023, 16(7), 2869; https://doi.org/10.3390/ma16072869 - 04 Apr 2023

Cited by 6 | Viewed by 1529

Abstract

Flexible CZTSSe solar cells have attracted much attention due to their earth-abundant elements, high stability, and wide application prospects. However, the environmental problems caused by the high toxicity of the Cd in the buffer layers restrict the development of flexible CZTSSe solar cells. Herein, we develop a Cd-free flexible CZTSSe/ZnO solar cell. The influences of the ZnO films on device performances are investigated. The light absorption capacity of flexible CZTSSe solar cells is enhanced due to the removal of the CdS layer. The optimal thickness of the ZnO buffer layers and the appropriate annealing temperature of the CZTSSe/ZnO are 100 nm and 200 °C. Ultimately, the optimum flexible CZTSSe/ZnO device achieves an efficiency of 5.0%, which is the highest efficiency for flexible CZTSSe/ZnO solar cells. The systematic characterizations indicate that the flexible CZTSSe/ZnO solar cells based on the optimal conditions achieved quality heterojunction, low defect density and better charge transfer capability. This work provides a new strategy for the development of the environmentally friendly and low-cost flexible CZTSSe solar cells. Full article

(This article belongs to the Special Issue Colloidal Quantum Dots for Nanophotonic Devices)

► Show Figures

Graphical abstract

14 pages, 2255 KiB

Open AccessEditor’s ChoiceArticle

Lithium-Ion Glass Gating of HgTe Nanocrystal Film with Designed Light-Matter Coupling

by Stefano Pierini, Claire Abadie, Tung Huu Dang, Adrien Khalili, Huichen Zhang, Mariarosa Cavallo, Yoann Prado, Bruno Gallas, Sandrine Ithurria, Sébastien Sauvage, Jean Francois Dayen, Grégory Vincent and Emmanuel Lhuillier

Materials 2023, 16(6), 2335; https://doi.org/10.3390/ma16062335 - 14 Mar 2023

Viewed by 1563

Abstract

Nanocrystals’ (NCs) band gap can be easily tuned over the infrared range, making them appealing for the design of cost-effective sensors. Though their growth has reached a high level of maturity, their doping remains a poorly controlled parameter, raising the need for post-synthesis tuning strategies. As a result, phototransistor device geometry offers an interesting alternative to photoconductors, allowing carrier density control. Phototransistors based on NCs that target integrated infrared sensing have to (i) be compatible with low-temperature operation, (ii) avoid liquid handling, and (iii) enable large carrier density tuning. These constraints drive the search for innovative gate technologies beyond traditional dielectric or conventional liquid and ion gel electrolytes. Here, we explore lithium-ion glass gating and apply it to channels made of HgTe narrow band gap NCs. We demonstrate that this all-solid gate strategy is compatible with large capacitance up to 2 µF·cm⁻² and can be operated over a broad range of temperatures (130–300 K). Finally, we tackle an issue often faced by NC-based phototransistors:their low absorption; from a metallic grating structure, we combined two resonances and achieved high responsivity (10 A·W⁻¹ or an external quantum efficiency of 500%) over a broadband spectral range. Full article

(This article belongs to the Special Issue Colloidal Quantum Dots for Nanophotonic Devices)

► Show Figures

Figure 1

11 pages, 3522 KiB

Open AccessArticle

GaAs Nanowire Photodetectors Based on Au Nanoparticles Modification

by Fengyuan Lin, Jinzhi Cui, Zhihong Zhang, Zhipeng Wei, Xiaobing Hou, Bingheng Meng, Yanjun Liu, Jilong Tang, Kexue Li, Lei Liao and Qun Hao

Materials 2023, 16(4), 1735; https://doi.org/10.3390/ma16041735 - 20 Feb 2023

Cited by 4 | Viewed by 1854

Abstract

A high-performance GaAs nanowire photodetector was fabricated based on the modification of Au nanoparticles (NPs). Au nanoparticles prepared by thermal evaporation were used to modify the defects on the surface of GaAs nanowires. Plasmons and Schottky barriers were also introduced on the surface of the GaAs nanowires, to enhance their light absorption and promote the separation of carriers inside the GaAs nanowires. The research results show that under the appropriate modification time, the dark current of GaAs nanowire photodetectors was reduced. In addition, photocurrent photodetectors increased from 2.39 × 10⁻¹⁰ A to 1.26 × 10⁻⁹ A. The responsivity of GaAs nanowire photodetectors correspondingly increased from 0.569 A∙W⁻¹ to 3.047 A∙W⁻¹. The reasons for the improvement of the photodetectors’ performance after modification were analyzed through the energy band theory model. This work proposes a new method to improve the performance of GaAs nanowire photodetectors. Full article

(This article belongs to the Special Issue Colloidal Quantum Dots for Nanophotonic Devices)

► Show Figures

Graphical abstract

Review

Jump to: Research

25 pages, 7155 KiB

Open AccessReview

Mercury Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors

by Qun Hao, Haifei Ma, Xida Xing, Xin Tang, Zhipeng Wei, Xue Zhao and Menglu Chen

Materials 2023, 16(23), 7321; https://doi.org/10.3390/ma16237321 - 24 Nov 2023

Viewed by 1028

Abstract

In recent years, mercury chalcogenide colloidal quantum dots (CQDs) have attracted widespread research interest due to their unique electronic structure and optical properties. Mercury chalcogenide CQDs demonstrate an exceptionally broad spectrum and tunable light response across the short-wave to long-wave infrared spectrum. Photodetectors based on mercury chalcogenide CQDs have attracted considerable attention due to their advantages, including solution processability, low manufacturing costs, and excellent compatibility with silicon substrates, which offers significant potential for applications in infrared detection and imaging. However, practical applications of mercury-chalcogenide-CQD-based photodetectors encounter several challenges, including material stability, morphology control, surface modification, and passivation issues. These challenges act as bottlenecks in further advancing the technology. This review article delves into three types of materials, providing detailed insights into the synthesis methods, control of physical properties, and device engineering aspects of mercury-chalcogenide-CQD-based infrared photodetectors. This systematic review aids researchers in gaining a better understanding of the current state of research and provides clear directions for future investigations. Full article

(This article belongs to the Special Issue Colloidal Quantum Dots for Nanophotonic Devices)

► Show Figures

Figure 1

19 pages, 4926 KiB

Open AccessReview

Lead Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors

by Xue Zhao, Haifei Ma, Hongxing Cai, Zhipeng Wei, Ying Bi, Xin Tang and Tianling Qin

Materials 2023, 16(17), 5790; https://doi.org/10.3390/ma16175790 - 24 Aug 2023

Viewed by 1574

Abstract

Infrared detection technology plays an important role in remote sensing, imaging, monitoring, and other fields. So far, most infrared photodetectors are based on InGaAs and HgCdTe materials, which are limited by high fabrication costs, complex production processes, and poor compatibility with silicon-based readout integrated circuits. This hinders the wider application of infrared detection technology. Therefore, reducing the cost of high-performance photodetectors is a research focus. Colloidal quantum dot photodetectors have the advantages of solution processing, low cost, and good compatibility with silicon-based substrates. In this paper, we summarize the recent development of infrared photodetectors based on mainstream lead chalcogenide colloidal quantum dots. Full article

(This article belongs to the Special Issue Colloidal Quantum Dots for Nanophotonic Devices)

► Show Figures

Figure 1

16 pages, 2632 KiB

Open AccessReview

Micro Spectrometers Based on Materials Nanoarchitectonics

by Yanyan Qiu, Xingting Zhou, Xin Tang, Qun Hao and Menglu Chen

Materials 2023, 16(6), 2253; https://doi.org/10.3390/ma16062253 - 10 Mar 2023

Cited by 7 | Viewed by 1851

Abstract

Spectral analysis is an important tool that is widely used in scientific research and industry. Although the performance of benchtop spectrometers is very high, miniaturization and portability are more important indicators in some applications, such as on-site detection and real-time monitoring. Since the 1990s, micro spectrometers have emerged and developed. Meanwhile, with the development of nanotechnology, nanomaterials have been applied in the design of various micro spectrometers in recent years, further reducing the size of the spectrometers. In this paper, we review the research progress of micro spectrometers based on nanomaterials. We also discuss the main limitations and perspectives on micro spectrometers. Full article

(This article belongs to the Special Issue Colloidal Quantum Dots for Nanophotonic Devices)

► Show Figures

Journal Menu

Journal Browser

Colloidal Quantum Dots for Nanophotonic Devices

Share This Special Issue

Special Issue Editors

Special Issue Information

Keywords

Published Papers (10 papers)

Research

Review

Further Information

Guidelines

MDPI Initiatives

Follow MDPI