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Wide Bandgap Power Devices and Applications

A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "D1: Advanced Energy Materials".

Deadline for manuscript submissions: closed (31 January 2020) | Viewed by 12309

Special Issue Editors


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Guest Editor
Department of Marine Engineering, Graduate School of Maritime Sciences, Kobe University, Hyogo 658-0022, Japan
Interests: soft-switching DC–DC converters; resonant converters; high-frequency inverter
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Special Issue Information

Dear colleagues,

The Special Issue on wide bandgap power devices and applications in power electronics provides a forum for device scientists, circuit designers, and application engineers to share technology updates, research findings, development experience, and application knowledge.

Topics of interest include but are not limited to the following:

  • Heteroepitaxial and bulk materials growth;
  • Gate dielectrics and surface passivation;
  • Device structures and fabrication techniques;
  • Device characterization and modeling;
  • High-efficiency and compact converters;
  • SOAs including short-circuit, spike, and transient tolerance;
  • Harsh environment (e.g., high temperature) operation and reliability;
  • Packaging, power modules, and ICs;
  • Hard-switched and soft-switched applications;
  • Common-mode and EMI management;
  • Gate drive and other auxiliary circuits;
  • High-performance passive components;

Applications in renewable energy and storage, transportation, industrial drives, and grid power. 

Prof. Ching-Ming Lai
Prof. Tomokazu Mishima
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Energies is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Wide Bandgap Power Devices
  • Power Electronic
  • High Efficiency
  • High Power Density

Published Papers (3 papers)

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Research

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10 pages, 2473 KiB  
Article
Numerical Study of 4H-SiC UMOSFETs with Split-Gate and P+ Shielding
by Jheng-Yi Jiang, Tian-Li Wu, Feng Zhao and Chih-Fang Huang
Energies 2020, 13(5), 1122; https://doi.org/10.3390/en13051122 - 02 Mar 2020
Cited by 5 | Viewed by 2694
Abstract
In this paper, performances of a 4H-SiC UMOSFET with split gate and P+ shielding in different configurations are simulated and compared, with an emphasis on the switching characteristics and short circuit capability. A novel structure with the split gate in touch with the [...] Read more.
In this paper, performances of a 4H-SiC UMOSFET with split gate and P+ shielding in different configurations are simulated and compared, with an emphasis on the switching characteristics and short circuit capability. A novel structure with the split gate in touch with the P+ shielding is proposed. The key design issues for 4H-SiC UMOSFETs are trench gate dielectric protection and reverse transfer capacitance Crss reduction. Based on simulation results, it is concluded that a UMOSFET with a gate structure combining split gate grounded to the trench bottom protection P+ shielding layer and a current spreading layer is achieved to yield the best compromise between conduction, switching, and short circuit performance. The split-gate design can effectively reduce Crss by shielding the coupling between the gate electrode and the drain region. The P+ shielding design not only protects the oxide at trench bottom corners but also minimizes the short channel effect due to drain-induced barrier lowing and the channel length modulation. Trade-off of the doping concentration of current spreading layer for UMOSFET is also discussed. A heavily doped current spreading layer may increase Crss and influence the switching time, even though RON,SP is reduced. Full article
(This article belongs to the Special Issue Wide Bandgap Power Devices and Applications)
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16 pages, 6276 KiB  
Article
Bidirectional Power Flow Control of a Multi Input Converter for Energy Storage System
by Cheng-Yu Tang and Jun-Ting Lin
Energies 2019, 12(19), 3756; https://doi.org/10.3390/en12193756 - 30 Sep 2019
Cited by 4 | Viewed by 2161
Abstract
The objective of this paper is to propose a multi-input DC-DC converter with bidirectional power flow control capability. Compared to the traditional power converter, the multi-input converter (MIC) can save on the number of components and the circuit cost. Under normal conditions, the [...] Read more.
The objective of this paper is to propose a multi-input DC-DC converter with bidirectional power flow control capability. Compared to the traditional power converter, the multi-input converter (MIC) can save on the number of components and the circuit cost. Under normal conditions, the MIC is able to transfer energy from different input sources to the load. However, if the battery module is adopted, both the charging or discharging features should be considered. Therefore, the bidirectional power flow control of the MIC is necessary. On the other hand, because of the inconsistency characteristics of batteries, unbalanced circuit operation might occur whereby the circuit and the battery might be damaged. Therefore, dynamic current regulation strategies are developed for the MIC. Consequently, the proposed MIC circuit is able to achieve the bidirectional power flow control capability as well as control the input currents independently. Detailed circuit analysis and comprehensive mathematical derivation and of the proposed MIC will be presented in this paper. Finally, both simulation and experimental results obtained from a 500 W prototype circuit verify the performance and feasibility of the proposed bidirectional multi-input converter. Full article
(This article belongs to the Special Issue Wide Bandgap Power Devices and Applications)
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Review

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20 pages, 3492 KiB  
Review
Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview
by Mauricio Dalla Vecchia, Simon Ravyts, Giel Van den Broeck and Johan Driesen
Energies 2019, 12(14), 2663; https://doi.org/10.3390/en12142663 - 11 Jul 2019
Cited by 52 | Viewed by 6799
Abstract
This paper will revise, experimentally investigate, and discuss the main application challenges related to gallium nitride power semiconductors in switch-mode power converters. Gallium Nitride (GaN) devices are inherently gaining space in the market. Due to its high switching speed and operational switching frequency, [...] Read more.
This paper will revise, experimentally investigate, and discuss the main application challenges related to gallium nitride power semiconductors in switch-mode power converters. Gallium Nitride (GaN) devices are inherently gaining space in the market. Due to its high switching speed and operational switching frequency, challenges related to the circuit design procedure, passive component selection, thermal management, and experimental testing are currently faced by power electronics engineers. Therefore, the focus of this paper is on low-voltage (<650 V) devices that are used to assemble DC-DC and/or DC-AC converters to, for instance, interconnect PV generation systems in the DC and/or AC grids. The current subjects will be discussed herein: GaN device structure, the advantages and disadvantages of each lateral gallium nitride technology available, design challenges related to electrical layout and thermal management, overvoltages and its implications in the driver signal, and finally, a comprehensive comparison between GaN and Si technology considering the main parameters to increase the converters efficiency. Full article
(This article belongs to the Special Issue Wide Bandgap Power Devices and Applications)
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