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Micromachines
Special Issues
Cutting-Edge Terahertz Technology
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Cutting-Edge Terahertz Technology

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E：Engineering and Technology".

Deadline for manuscript submissions: 31 July 2024 | Viewed by 2885

Special Issue Editors

Dr. Jiangqiao Ding

E-Mail Website
Guest Editor
School of Electronic & Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
Interests: submillimeter wave/terahertz technology; passive and active THz components/devices; solid-state active transceiver circuits; waveguide devices
Dr. Maher Bakri-Kassem

E-Mail Website
Guest Editor
Department of Systems Design Engineering, University of Waterloo, Waterloo, ON N2L 3G1, Canada
Interests: MEMS micro-fabrication; MEMS and semiconductor technologies integration for smart sensors; Microwave and millimeter wave circuits for wireless and satellite communication; assembly and packaging techniques

Special Issue Information

Dear Colleagues,

Today, Submillimeter wave/terahertz technology is used in an increasingly wide variety of applications: astronomy science, information and communications technologies (ICT); biology and medical sciences; non-destructive evaluation; homeland security; the quality control of food and agricultural products; global environmental monitoring; and ultrafast computing. State-of-the-art Submillimeter wave/terahertz components/devices/systems have demonstrated serious issues in regard to theories, techniques and micromachining with sources, detectors, mixers, amplifiers, phase shifters, filters, multiplexers, couplers, etc.

Accordingly, this Special Issue seeks to showcase research papers, communications, and review articles that focus on original and advanced theoretical, technical and application-related research on the basic science, components, devices, circuits, and systems of Submillimeter/terahertz waves (100 GHz–10 THz).

The topics include, but are not limited to:

  • Submillimeter wave/THz waveguides;
  • Submillimeter wave/THz antennas;
  • Submillimeter wave/THz sources;
  • Submillimeter wave/THz detectors;
  • Submillimeter wave/THz applications;
  • Submillimeter wave/THz radars;
  • Submillimeter wave/THz communications;
  • Submillimeter wave/THz sensing.

Dr. Jiangqiao Ding
Dr. Maher Bakri-Kassem
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • submillimeter wave/THz technology
  • submillimeter wave/THz components
  • submillimeter wave/THz devices
  • submillimeter wave/THz applications
  • submillimeter wave/THz waveguides

Published Papers (3 papers)

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Research

12 pages, 7970 KiB  
Article
Fabrication and Characterization of 2D Nonlinear Structures Based on DAST Nanocrystals and SU-8 Photoresist for Terahertz Application
by Tamara Pogosian, Isabelle Ledoux-Rak, Igor Denisyuk, Maria Fokina and Ngoc Diep Lai
Micromachines 2024, 15(2), 203; https://doi.org/10.3390/mi15020203 - 29 Jan 2024
Viewed by 678
Abstract
We demonstrate a method for the realization of highly nonlinear optical 4-(4-dimethylaminostyryl)- 1-methylpyridinium tosylate (DAST) two-dimensional structures by a double-step technique. The desired polymeric structures were first fabricated by using the multiple exposure of the two-beam interference technique, and the DAST nanoscrystals were [...] Read more.
We demonstrate a method for the realization of highly nonlinear optical 4-(4-dimethylaminostyryl)- 1-methylpyridinium tosylate (DAST) two-dimensional structures by a double-step technique. The desired polymeric structures were first fabricated by using the multiple exposure of the two-beam interference technique, and the DAST nanoscrystals were then prepared inside the air-voids of these photoresist templates, resulting in nonlinear periodic structures. The nonlinear properties were characterized by optical and scanning microscopies, as well as by second-harmonic generation technique. This nonlinear modulation is very promising for the enhancement of nonlinear conversion rates, such as terahertz generation, by using the quasi-phase matching technique. Full article
(This article belongs to the Special Issue Cutting-Edge Terahertz Technology)
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7 pages, 2736 KiB  
Communication
High Gain Slot Array Antenna at 110 GHz Based on Computer Numerical Control
by Zhen Tan, Yun Zhao and Jiangqiao Ding
Micromachines 2023, 14(10), 1947; https://doi.org/10.3390/mi14101947 - 19 Oct 2023
Viewed by 749
Abstract
This paper presents a waveguide–slot antenna to generate a radiation beam with high gain fed by a low-loss feeding network at 110 GHz. The proposed antenna consists of a compact eight-way power divider and a waveguide–slot array. The eight-way power divider provides equal-amplitude [...] Read more.
This paper presents a waveguide–slot antenna to generate a radiation beam with high gain fed by a low-loss feeding network at 110 GHz. The proposed antenna consists of a compact eight-way power divider and a waveguide–slot array. The eight-way power divider provides equal-amplitude and alternative-phase excitation for the slot array, and each of them supports two waveguides. The integral structure is implemented by two layers with a channeled substratum and a slotted superstratum. To verify the proposed slot array, the designed array is fabricated with computer numerical control (CNC) milling and measured. The measured peak gain of the designed antenna is 32 dBi at 110 GHz. The proposed antenna with a simple structure provides a promising solution to develop high gain antenna in upper millimeter-wave and sub-terahertz (THz) applications. Full article
(This article belongs to the Special Issue Cutting-Edge Terahertz Technology)
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12 pages, 5378 KiB  
Article
A High-Power 170 GHz in-Phase Power-Combing Frequency Doubler Based on Schottky Diodes
by Li Wang, Dehai Zhang, Jin Meng and Haotian Zhu
Micromachines 2023, 14(8), 1530; https://doi.org/10.3390/mi14081530 - 30 Jul 2023
Viewed by 806
Abstract
In this paper, a high-power 170 GHz frequency doubler based on a Schottky diode is proposed using an in-phase power-combining structure. Unlike a conventional power-combining frequency doubler, the proposed frequency doubler utilizes the combination of a T-junction power divider and two bend waveguides [...] Read more.
In this paper, a high-power 170 GHz frequency doubler based on a Schottky diode is proposed using an in-phase power-combining structure. Unlike a conventional power-combining frequency doubler, the proposed frequency doubler utilizes the combination of a T-junction power divider and two bend waveguides to eliminate the phase difference between the two output ports of the T-junction power divider, so as to achieve in-phase power combining with a concise structure. The frequency doubler was fabricated on a 50 μm thick AlN high-thermal-conductivity substrate to reduce the impact of the thermal effect on the performance. The measured results show that the doubler exhibits a conversion efficiency of 11–31.3% in the 165–180 GHz band under 350–400 mW of input power, and a 118 mW peak output power with a 31.3% efficiency was measured at 174 GHz `when the input power was 376 mW. A good agreement was achieved between the simulation results and the measured performance of the doubler, which proves the effectiveness of the proposed in-phase power-combining structure. Full article
(This article belongs to the Special Issue Cutting-Edge Terahertz Technology)
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