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Thin Films: Growth, Characterization, and Optoelectronic Device Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: closed (20 March 2022) | Viewed by 20744

Special Issue Editor


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Guest Editor
Department of Physics and Astronomy & Wright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH, USA
Interests: thin films; optical properties; spectroscopic ellipsometry; photovoltaics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Optical and electronic device performance depends on the properties of each component material, with a large number of those materials present as thin films and coatings ranging from monolayers to hundreds of microns in thickness. Such devices in energy generation such as solar cells, in sensors designed to operate in different spectral ranges and in imaging, are either directly enabled by the functionality of thin films or have their level of performance defined by the properties of the films. Underlying or over-deposited layers in a device structure may substantially impact the properties of a thin film, making understanding material properties and behavior in the final device structure vital to understanding and optimizing device performance. 

Here we solicit manuscripts on growth, characterization, and resultant devices based on inorganic, organic, and hybrid metallic, insulating, and semiconducting thin films, with a focus on characterizing properties in device and device-like structures and understanding device performance. Due to the range and types of optical and electronic device applications, including large area depositions in display and photovoltaic technologies, pixel scale geometries in sensors and integrated circuits, and functional optical and hard coatings, we encourage submission of manuscripts involving experimental and theoretical investigations of thin films exhibiting epitaxial, polycrystalline, or amorphous characteristics, including studies of surfaces, interfaces including subsurface modification, nanostructures, and bulk materials overdeposited with thin films or with surface modifications. Of particular interest are in situ studies of material growth evolution and device processing; characterization of structural, optical, and electrical properties of thin films in devices; novel deposition and material processing; and optoelectronic devices, including thin film photovoltaics and sensors. 

It is my pleasure to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are all welcome.

Assoc. Prof. Nikolas J. Podraza
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • thin film growth and nanostructured materials fabrication
  • optical, electrical, structural properties
  • functional coatings
  • surface and interfacial layers
  • thin film devices
  • solar cells
  • sensors

Published Papers (7 papers)

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Research

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16 pages, 37723 KiB  
Article
Fabrication of Cu2ZnSnS4 Light Absorber Using a Cost-Effective Mechanochemical Method for Photovoltaic Applications
by Meenakshi Sahu, Vasudeva Reddy Minnam Reddy, Bomyung Kim, Bharati Patro, Chinho Park, Woo Kyoung Kim and Pratibha Sharma
Materials 2022, 15(5), 1708; https://doi.org/10.3390/ma15051708 - 24 Feb 2022
Cited by 23 | Viewed by 2348
Abstract
In the present study, we adopt an easy and cost-effective route for preparing Cu2ZnSnS4 (CZTS)-absorber nanoparticles by a mechanochemical method using non-toxic and environmentally benign solvents (butanol, methyl ethyl ketone, and ethanol). The gram-scale synthesis of absorber nanoparticles was achieved [...] Read more.
In the present study, we adopt an easy and cost-effective route for preparing Cu2ZnSnS4 (CZTS)-absorber nanoparticles by a mechanochemical method using non-toxic and environmentally benign solvents (butanol, methyl ethyl ketone, and ethanol). The gram-scale synthesis of absorber nanoparticles was achieved in a non-hazardous, zero-waste process without using high-vacuum equipment. The effects of annealing and Na incorporation on the properties of spin-coated CZTS thin films were scrutinized. The deposited samples showed kesterite crystal structure and single phase. The morphological results revealed an improvement in the surface morphology after annealing. The optical bandgaps of the thin films lied in the range of 1.50–1.57 eV with p-type nature. Finally, photovoltaic devices were fabricated, and their cell performance parameters were studied. An efficiency of 0.16% was observed. The present study provides a potential route for the cost-effective fabrication of CZTS-based photovoltaic devices. Full article
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12 pages, 3382 KiB  
Article
Impedance Analysis and Noise Measurements on Multi Walled Carbon Nanotube Networks
by Usha Philipose, Yan Jiang, Brianna Western, Michael Harcrow, Chris Littler, Ashok Sood, John W. Zeller, Bobby Lineberry and A. J. Syllaios
Materials 2021, 14(24), 7509; https://doi.org/10.3390/ma14247509 - 07 Dec 2021
Cited by 4 | Viewed by 1844
Abstract
The electrical impedance characteristics of multi-walled carbon nanotube (MWCNTs) networks were studied as a function of CNT concentrations in the frequency range of 1 kHz–1 MHz. The novelty of this study is that the MWCNTs were not embedded in any polymer matrix and [...] Read more.
The electrical impedance characteristics of multi-walled carbon nanotube (MWCNTs) networks were studied as a function of CNT concentrations in the frequency range of 1 kHz–1 MHz. The novelty of this study is that the MWCNTs were not embedded in any polymer matrix and so the response of the device to electrical measurements are attributed to the CNTs in the network without any contribution from a polymer host matrix. Devices with low MWCNT packing density (0.31–0.85 µg/cm2) exhibit a frequency independent plateau in the low-frequency regime. At higher frequencies, the AC conductivity of these devices increases following a power law, characteristic of the universal dynamic response (UDR) phenomenon. On the other hand, devices with high MWCNT concentrations (>1.0 µg/cm2) exhibit frequency independent conductivity over the entire frequency range (up to 1 MHz), indicating that conduction in these devices is due to direct contact between the CNTs in the network. A simple single-relaxation time electrical equivalent circuit with an effective resistance and capacitance is used to describe the device performance. The electrical noise measurements on devices with different MWCNT packing densities exhibit bias-dependent low-frequency 1/f noise, attributed to resistance fluctuations. Full article
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19 pages, 2054 KiB  
Article
Optical Properties of Magnesium-Zinc Oxide for Thin Film Photovoltaics
by Mohammed A. Razooqi Alaani, Prakash Koirala, Adam B. Phillips, Geethika K. Liyanage, Rasha A. Awni, Dhurba R. Sapkota, Balaji Ramanujam, Michael J. Heben, Stephen K. O’Leary, Nikolas J. Podraza and Robert W. Collins
Materials 2021, 14(19), 5649; https://doi.org/10.3390/ma14195649 - 28 Sep 2021
Cited by 4 | Viewed by 2010
Abstract
Motivated by their utility in CdTe-based thin film photovoltaics (PV) devices, an investigation of thin films of the magnesium-zinc oxide (MgxZn1−xO or MZO) alloy system was undertaken applying spectroscopic ellipsometry (SE). Dominant wurtzite phase MZO thin films with [...] Read more.
Motivated by their utility in CdTe-based thin film photovoltaics (PV) devices, an investigation of thin films of the magnesium-zinc oxide (MgxZn1−xO or MZO) alloy system was undertaken applying spectroscopic ellipsometry (SE). Dominant wurtzite phase MZO thin films with Mg contents in the range 0 ≤ x ≤ 0.42 were deposited on room temperature soda lime glass (SLG) substrates by magnetron co-sputtering of MgO and ZnO targets followed by annealing. The complex dielectric functions ε of these films were determined and parameterized over the photon energy range from 0.73 to 6.5 eV using an analytical model consisting of two critical point (CP) oscillators. The CP parameters in this model are expressed as polynomial functions of the best fitting lowest CP energy or bandgap E0 = Eg, which in turn is a quadratic function of x. As functions of x, both the lowest energy CP broadening and the Urbach parameter show minima for x ~ 0.3, which corresponds to a bandgap of 3.65 eV. As a result, it is concluded that for this composition and bandgap, the MZO exhibits either a minimum concentration of defects in the bulk of the crystallites or a maximum in the grain size, an observation consistent with measured X-ray diffraction line broadenings. The parametric expression for ε developed here is expected to be useful in future mapping and through-the-glass SE analyses of partial and complete PV device structures incorporating MZO. Full article
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18 pages, 8136 KiB  
Article
Impact of Humidity and Temperature on the Stability of the Optical Properties and Structure of MAPbI3, MA0.7FA0.3PbI3 and (FAPbI3)0.95(MAPbBr3)0.05 Perovskite Thin Films
by Marie Solange Tumusange, Biwas Subedi, Cong Chen, Maxwell M. Junda, Zhaoning Song, Yanfa Yan and Nikolas J. Podraza
Materials 2021, 14(14), 4054; https://doi.org/10.3390/ma14144054 - 20 Jul 2021
Cited by 11 | Viewed by 3433
Abstract
In situ real-time spectroscopic ellipsometry (RTSE) measurements have been conducted on MAPbI3, MA0.7FA0.3PbI3, and (FAPbI3)0.95(MAPbBr3)0.05 perovskite thin films when exposed to different levels of relative humidity at given [...] Read more.
In situ real-time spectroscopic ellipsometry (RTSE) measurements have been conducted on MAPbI3, MA0.7FA0.3PbI3, and (FAPbI3)0.95(MAPbBr3)0.05 perovskite thin films when exposed to different levels of relative humidity at given temperatures over time. Analysis of RTSE measurements track changes in the complex dielectric function spectra and structure, which indicate variations in stability influenced by the underlying material, preparation method, and perovskite composition. MAPbI3 and MA0.7FA0.3PbI3 films deposited on commercial fluorine-doped tin oxide coated glass are more stable than corresponding films deposited on soda lime glass directly. (FAPbI3)0.95(MAPbBr3)0.05 films on soda lime glass showed improved stability over the other compositions regardless of the substrate, and this is attributed to the preparation method as well as the final composition. Full article
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16 pages, 3670 KiB  
Article
Real-Time Optimization of Anti-Reflective Coatings for CIGS Solar Cells
by Grace Rajan, Shankar Karki, Robert W. Collins, Nikolas J. Podraza and Sylvain Marsillac
Materials 2020, 13(19), 4259; https://doi.org/10.3390/ma13194259 - 24 Sep 2020
Cited by 9 | Viewed by 2399
Abstract
A new method combining in-situ real-time spectroscopic ellipsometry and optical modeling to optimize the thickness of an anti-reflective (AR) coating for Cu(In,Ga)Se2 (CIGS) solar cells is described and applied directly to fabricate devices. The model is based on transfer matrix theory with [...] Read more.
A new method combining in-situ real-time spectroscopic ellipsometry and optical modeling to optimize the thickness of an anti-reflective (AR) coating for Cu(In,Ga)Se2 (CIGS) solar cells is described and applied directly to fabricate devices. The model is based on transfer matrix theory with input from the accurate measurement of complex dielectric function spectra and thickness of each layer in the solar cell by spectroscopic ellipsometry. The AR coating thickness is optimized in real time to optically enhance device performance with varying thickness and properties of the constituent layers. Among the parameters studied, we notably demonstrate how changes in thickness of the CIGS absorber layer, buffer layers, and transparent contact layer of higher performance solar cells affect the optimized AR coating thickness. An increase in the device performance of up to 6% with the optimized AR layer is demonstrated, emphasizing the importance of designing the AR coating based on the properties of the device structure. Full article
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7 pages, 1472 KiB  
Article
Fabrication and Characteristics of Heavily Fe-Doped LiNbO3/Si Heterojunction
by Wencan Li, Jiao Cui, Dahuai Zheng, Weiwei Wang, Shuolin Wang, Shaoqing Song, Hongde Liu, Yongfa Kong and Jingjun Xu
Materials 2019, 12(17), 2659; https://doi.org/10.3390/ma12172659 - 21 Aug 2019
Cited by 6 | Viewed by 2370
Abstract
A series of heavily Fe-doped LiNbO3 (LN:Fe) crystals were grown via the Czochralski method. The dark- and photo-conductivity of the 5.0 wt.% Fe-doped LiNbO3 crystal reached 3.30 × 10−8 Ω−1 cm−1 and 1.46 × 10−7 Ω−1 [...] Read more.
A series of heavily Fe-doped LiNbO3 (LN:Fe) crystals were grown via the Czochralski method. The dark- and photo-conductivity of the 5.0 wt.% Fe-doped LiNbO3 crystal reached 3.30 × 10−8 Ω−1 cm−1 and 1.46 × 10−7 Ω−1 cm−1 at 473 nm, which are about 7 and 5 orders of magnitude higher than that of congruent LiNbO3, respectively. Then, a p-n heterojunction was fabricated by depositing the heavily Fe-doped LiNbO3 on a p-type Si substrate using the pulsed laser deposition. The current–voltage curve of the LN:Fe/Si heterojunction presents a well-defined behavior with a turn-on voltage of 2.9 V. This LN:Fe/Si heterojunction gives an excellent prototype device for integrated optics and electro-photonics. Full article
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Review

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41 pages, 9885 KiB  
Review
A Critical Review on Crystal Growth Techniques for Scalable Deposition of Photovoltaic Perovskite Thin Films
by Mazhar Abbas, Linxiang Zeng, Fei Guo, Muhammad Rauf, Xiao-Cong Yuan and Boyuan Cai
Materials 2020, 13(21), 4851; https://doi.org/10.3390/ma13214851 - 29 Oct 2020
Cited by 35 | Viewed by 5015
Abstract
Although the efficiency of small-size perovskite solar cells (PSCs) has reached an incredible level of 25.25%, there is still a substantial loss in performance when switching from small size devices to large-scale solar modules. The large efficiency deficit is primarily associated with the [...] Read more.
Although the efficiency of small-size perovskite solar cells (PSCs) has reached an incredible level of 25.25%, there is still a substantial loss in performance when switching from small size devices to large-scale solar modules. The large efficiency deficit is primarily associated with the big challenge of coating homogeneous, large-area, high-quality thin films via scalable processes. Here, we provide a comprehensive understanding of the nucleation and crystal growth kinetics, which are the key steps for perovskite film formation. Several thin-film crystallization techniques, including antisolvent, hot-casting, vacuum quenching, and gas blowing, are then summarized to distinguish their applications for scalable fabrication of perovskite thin films. In viewing the essential importance of the film morphology on device performance, several strategies including additive engineering, Lewis acid-based approach, solvent annealing, etc., which are capable of modulating the crystal morphology of perovskite film, are discussed. Finally, we summarize the recent progress in the scalable deposition of large-scale perovskite thin film for high-performance devices. Full article
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