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Advanced Structures and Properties for Ceramic Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced and Functional Ceramics and Glasses".

Deadline for manuscript submissions: closed (20 September 2022) | Viewed by 3182

Special Issue Editors


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Guest Editor
Universite Francois-Rabelais Tours, UFR Sciences et Techniques, Tours, France
Interests: infrared; dielectrics; multiferroics; superconductors; perovskites; energy; thin films

E-Mail Website
Guest Editor
Universite Francois-Rabelais Tours, UFR Sciences et Techniques, Tours, France
Interests: metal–ceramic composites; structural properties; oxides; energy

Special Issue Information

Dear Colleagues,

With high-Tc oxide superconductors, the colossal permittivity of dielectrics, and many other potential applications, advanced ceramic materials have earned their scientific nobility both in ancient times and in their daily use today. Solid state reaction for their elaboration has been complemented by sol–gel routes and, more recently, core–shell methods. The sintering of powders under controlled atmosphere and the characterization and the properties of grain boundaries and of the interface between the grain and the grain boundary remain challenging. Coating is suitable for certain applications. Nanostructuration is an open field. The development of methods of diffraction, imaging by transmission electron microscopy (HRTEM, HAADF STEM, etc.), scanning electron microscopy, and atomic force microscopy helps the characterization of structures and properties. Raman spectroscopy is also exploited. Lead-free piezoelectrics, ferroelectrics, multiferroics including their construction by coating of alternating ferromagnetic and ferroelectric thin films, and more generally dielectrics are defined for applications with positive potential. The energy transition raises pressing challenges for which advanced ceramic materials are on the frontline for energy efficiency, energy storage, high-performance capacitors, electrodes for solid fuel cells, and many other promising fields.

Prof. Dr. François Gervais
Dr. Cécile Autret-Lambert
Guest Editors

Manuscript Submission Information

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Keywords

  • sol–gel
  • core–shell
  • sintering
  • nanostructuration
  • coating
  • ferroelectrics
  • multiferroics
  • dielectrics
  • colossal permittivity
  • electroceramics

Published Papers (2 papers)

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Research

6 pages, 2193 KiB  
Article
Destabilization and Ion Conductivity of Yttria-Stabilized Zirconia for Solid Oxide Electrolyte by Thermal Aging
by Hwanseok Lee, Kanghee Jo, Min-sung Park, Taewoo Kim and Heesoo Lee
Materials 2022, 15(19), 6947; https://doi.org/10.3390/ma15196947 - 07 Oct 2022
Viewed by 1121
Abstract
The degradation behavior of yttria-stabilized zirconia by thermal aging was investigated in terms of phase transformation, local atomic structure, and electrical conductivity. The average grain size of 8YSZ was increased from 20.83 μm to 25.81 μm with increasing aging temperature. All 8YSZ samples [...] Read more.
The degradation behavior of yttria-stabilized zirconia by thermal aging was investigated in terms of phase transformation, local atomic structure, and electrical conductivity. The average grain size of 8YSZ was increased from 20.83 μm to 25.81 μm with increasing aging temperature. All 8YSZ samples degraded at different temperatures had a predominantly cubic structure. The (400) peak of 8YSZ deteriorated at 1300 and 1400 °C shifted to a high angle, and the peak of tetragonal was not indexed. For 8YSZ degraded at 1500 °C, the (400) peak shifted to a lower angle, and the peak of tetragonal was identified. Analysis of the local microstructure of aged 8YSZ using extended X-ray absorption fine structure showed that the intensity of the Zr-O peak gradually increased and that the intensity of the peak of cationic Zr decreased as the aging temperature increased. The changes in the peaks indicate that the oxygen vacancies were reduced and Y3+ ions escaped from the lattice, leading to the destabilization of 8YSZ. The activation energies of 8YSZ at 1300 °C and 1400 °C were derived to be 0.86 and 0.87 eV, respectively, and the activation energy of 8YSZ at 1500 °C increased significantly to 0.92 eV. With the thermal deterioration of 8YSZ, the cation (Y3+) escaped from the lattice and the number of oxygen vacancies decreased, resulting in the formation of a tetragonal structure and high activation energy at 1500 °C. Full article
(This article belongs to the Special Issue Advanced Structures and Properties for Ceramic Materials)
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18 pages, 4392 KiB  
Article
Dielectric, AC Conductivity, and DC Conductivity Behaviours of Sr2CaTeO6 Double Perovskite
by Muhammad Zharfan Halizan and Zakiah Mohamed
Materials 2022, 15(12), 4363; https://doi.org/10.3390/ma15124363 - 20 Jun 2022
Cited by 10 | Viewed by 1735
Abstract
Relatively new double perovskite material, Sr2CaTeO6, has been prepared through conventional solid-state procedures. Structural, dielectric, and optical characteristics of this exquisite solid-state material were analysed in this study. The single-phase monoclinic P21/n structure of this prepared compound [...] Read more.
Relatively new double perovskite material, Sr2CaTeO6, has been prepared through conventional solid-state procedures. Structural, dielectric, and optical characteristics of this exquisite solid-state material were analysed in this study. The single-phase monoclinic P21/n structure of this prepared compound was well correlated with the literature review. Good distribution of grain sizes and shapes was observed in the morphological study of this compound. The discussions on its optical and dielectric properties are included in this manuscript. High dielectric real permittivity, low dielectric loss, and good capacitance over a range of temperatures possessed by this compound, as shown in dielectric and electrical modulus studies, indicated good potential values for capacitor applications. The Ro(RgQg)(RgbQgb) circuit fitted well with the impedance and electrical modulus plot of the compound. Its relatively high electrical DC conductivity in grain at high frequencies and its increasing value with the temperature are typical of a semiconductor behaviour. This behaviour might be attributed to the presence of minor oxygen vacancies within its lattice structure and provides a long-range conduction mechanism. A small difference between activation energy and Ea of DC conductivity indicates that the same charge carriers were involved in both grains and the grain boundaries’ long-range conduction. The electrical AC conductivity of this compound was found to contribute to the dielectric loss in grain structure and can be related to Jonscher’s power law. The presence of polarons in this compound was exhibited by non-overlapping small polaron tunnelling (NSPT) and overlapping large polaron tunnelling (OLPT) conduction mechanisms over a range of temperatures. Wide optical band gap and Eopt in the range of 2.6 eV to 3.6 eV were determined by using an indirect and direct allowed mechanism of electrons transitions. These values supported the efficient semiconducting behaviour of the grain in this material and are suitable for applications in the semiconductor industry. Full article
(This article belongs to the Special Issue Advanced Structures and Properties for Ceramic Materials)
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