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Advances in Conducting and Semiconducting Materials
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Advances in Conducting and Semiconducting Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Materials Characterization".

Deadline for manuscript submissions: closed (20 January 2023) | Viewed by 3181

Special Issue Editor

Prof. Dr. Wen-Hsi Lee

E-Mail Website
Guest Editor
Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
Interests: electronic ceramic; organic thin-film transistors; RF ceramic components for wireless communication; system-in-package; thin-film semiconductor processing; thin-film solar cells

Special Issue Information

Dear Colleagues,

The scope of application of conductor and semiconductor materials is vast. These materials find utilities not only electrical modules, devices, etc., but are also used as components, circuits, and other auxiliaries related to electronics, computers, and instrumentation fields. Advanced conductors that outperform silver, copper, and nanocarbon can revolutionize the electronics industry. Advanced semiconductors that have such superior performance (e.g., high voltage resistance, high frequency, high efficiency, high radiation resistance) are the "core" of a new generation of information technology, prioritizing energy saving and smart manufacturing. Understanding film materials, process control, kinetics, growth, microstructure, and electrical properties are important for microelectronic applications of advanced conductor and semiconductor materials. 

We invite colleagues to contribute to this Special Issue on the aforementioned concepts and keywords. The goal for this Special Issue is to describe the recent developments in this rapidly developing interdisciplinary research field. Full papers, communications, and reviews are all welcome.

Prof. Dr. Wen-Hsi Lee
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • conductor materials
  • semiconductor material
  • thin film
  • thick film
  • microelectronic
  • energy
  • 5/6G communication

Published Papers (2 papers)

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Research

11 pages, 4011 KiB  
Article
Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices
by Juyeong Pyo, Jong-Ho Bae, Sungjun Kim and Seongjae Cho
Materials 2023, 16(3), 1249; https://doi.org/10.3390/ma16031249 - 1 Feb 2023
Cited by 2 | Viewed by 1697
Abstract
A three-terminal synaptic transistor enables more accurate controllability over the conductance compared with traditional two-terminal synaptic devices for the synaptic devices in hardware-oriented neuromorphic systems. In this work, we fabricated IGZO-based three-terminal devices comprising HfAlOx and CeOx layers to demonstrate the [...] Read more.
A three-terminal synaptic transistor enables more accurate controllability over the conductance compared with traditional two-terminal synaptic devices for the synaptic devices in hardware-oriented neuromorphic systems. In this work, we fabricated IGZO-based three-terminal devices comprising HfAlOx and CeOx layers to demonstrate the synaptic operations. The chemical compositions and thicknesses of the devices were verified by transmission electron microscopy and energy dispersive spectroscopy in cooperation. The excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), short-term potentiation (STP), and short-term depression (STD) of the synaptic devices were realized for the short-term memory behaviors. The IGZO-based three-terminal synaptic transistor could thus be controlled appropriately by the amplitude, width, and interval time of the pulses for implementing the neuromorphic systems. Full article
(This article belongs to the Special Issue Advances in Conducting and Semiconducting Materials)
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10 pages, 3908 KiB  
Article
Negative Magnetoresistivity in Highly Doped n-Type GaN
by Leszek Konczewicz, Malgorzata Iwinska, Elzbieta Litwin-Staszewska, Marcin Zajac, Henryk Turski, Michal Bockowski, Dario Schiavon, Mikołaj Chlipała, Sandrine Juillaguet and Sylvie Contreras
Materials 2022, 15(20), 7069; https://doi.org/10.3390/ma15207069 - 11 Oct 2022
Cited by 1 | Viewed by 1177
Abstract
This paper presents low-temperature measurements of magnetoresistivity in heavily doped n-type GaN grown by basic GaN growth technologies: molecular beam epitaxy, metal-organic vapor phase epitaxy, halide vapor phase epitaxy and ammonothermal. Additionally, GaN crystallized by High Nitrogen Pressure Solution method was also examined. [...] Read more.
This paper presents low-temperature measurements of magnetoresistivity in heavily doped n-type GaN grown by basic GaN growth technologies: molecular beam epitaxy, metal-organic vapor phase epitaxy, halide vapor phase epitaxy and ammonothermal. Additionally, GaN crystallized by High Nitrogen Pressure Solution method was also examined. It was found that all the samples under study exhibited negative magnetoresistivity at a low temperature (10 K < T < 50 K) and for some samples this effect was observed up to 100 K. This negative magnetoresistivity effect is analyzed in the frame of the weak localization phenomena in the case of three-dimensional electron gas in a highly doped semiconductor. This analysis allows for determining the phasing coherence time τφ for heavily doped n-type GaN. The obtained τφ value is proportional to T−1.34, indicating that the electron–electron interaction is the main dephasing mechanism for the free carriers. Full article
(This article belongs to the Special Issue Advances in Conducting and Semiconducting Materials)
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