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Growth and Properties of Crystal Materials
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Growth and Properties of Crystal Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Chemistry".

Deadline for manuscript submissions: closed (20 July 2023) | Viewed by 6873

Special Issue Editor

Dr. Lei Zhang

E-Mail Website
Guest Editor
State Key Laboratory of Crystal Material, Shandong University, Jinan, China
Interests: crystal growth; wide bandgap semiconductor; GaN crystal; AlN crystal; perovskite crystal
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Crystals are the foundation of many advanced technologies today. For example, microprocessors and optoelectronics require nearly perfect silicon and III-V compound semiconductor crystals. Nonlinear optical crystals have been widely used in the field of high-power all-solid-state lasers. Crystals of all kinds are required for scientific studies and new applications. From piezoelectric, optical, and laser applications to today’s overwhelming photovoltaic market and widespread use of electronic devices in information technology, communication, system control, and power conversion, the research on growth and properties of crystal materials has contributed to the development of modern technology, and greatly promoted the progress of science and technology. Therefore, the growth of crystals with higher perfection and lower cost is a prerequisite for its application in any new functionalities, and high-efficiency devices based on high-quality crystals are the driving force for word development.

In this Special Issue, theoretical and experimental research on physical, chemical, and biological phenomena and processes related to the growth, epitaxy, characterization, and application of crystal materials are highlighted and discussed.

It is my pleasure to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are all welcome.

Dr. Lei Zhang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • crystal growth
  • semiconductors
  • photonic crystals
  • piezoelectric crystals
  • ferroelectric crystals
  • optical crystals, including nonlinear and laser crystals
  • scintillating crystals
  • perovskite crystal
  • solid-state physics and chemistry
  • crystalline surfaces
  • crystalline structure
  • crystalline interface
  • crystallization mechanisms
  • characterization techniques of crystal
  • numerical simulation of crystal

Published Papers (4 papers)

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Research

10 pages, 8350 KiB  
Article
Investigation of Nitrogen and Vacancy Defects in Synthetic Diamond Plates by Positron Annihilation Spectroscopy
by Marat Eseev, Ivan Kuziv, Aleksey Kostin, Igor Meshkov, Aleksey Sidorin and Oleg Orlov
Materials 2023, 16(1), 203; https://doi.org/10.3390/ma16010203 - 26 Dec 2022
Cited by 1 | Viewed by 1392
Abstract
Currently, diamonds are widely used in science and technology. However, the properties of diamonds due to their defects are not fully understood. In addition to optical methods, positron annihilation spectroscopy (PAS) can be successfully used to study defects in diamonds. Positrons are capable [...] Read more.
Currently, diamonds are widely used in science and technology. However, the properties of diamonds due to their defects are not fully understood. In addition to optical methods, positron annihilation spectroscopy (PAS) can be successfully used to study defects in diamonds. Positrons are capable of detecting vacancies, and small and large clusters of vacancies induced by irradiation, by providing information about their size, concentration, and chemical environment. By mapping in the infrared (IR) range, it is possible to consider the admixture composition of the main inclusions of the whole plate. This article presents the results of a study of defects in synthetic diamond plates, one of which was irradiated by electrons. It presents data about the distribution of the defect concentration obtained by Infrared spectroscopy. PAS with a monochromatic positron beam can be used as a non-destructive technique of detecting defects (vacancy) distribution over the depth of diamond plates. Full article
(This article belongs to the Special Issue Growth and Properties of Crystal Materials)
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19 pages, 7022 KiB  
Article
The Zn1−xPbxCr2Se4—Single Crystals Obtained by Chemical Vapour Transport—Structure and Magnetic, Electrical, and Thermal Properties
by Izabela Jendrzejewska, Tadeusz Groń, Joachim Kusz, Zbigniew Stokłosa, Ewa Pietrasik, Tomasz Goryczka, Bogdan Sawicki, Jerzy Goraus, Josef Jampilek, Henryk Duda and Beata Witkowska-Kita
Materials 2022, 15(15), 5289; https://doi.org/10.3390/ma15155289 - 31 Jul 2022
Cited by 1 | Viewed by 1150
Abstract
Monocrystalline chalcogenide spinels ZnCr2Se4 are antiferromagnetic and semiconductor materials. They can be used to dope or alloy with related semiconducting spinels. Therefore, their Pb-doped display is expected to have unique properties and new potential applications. This paper presents the results [...] Read more.
Monocrystalline chalcogenide spinels ZnCr2Se4 are antiferromagnetic and semiconductor materials. They can be used to dope or alloy with related semiconducting spinels. Therefore, their Pb-doped display is expected to have unique properties and new potential applications. This paper presents the results of dc and ac magnetic measurements, including the critical fields visible on the magnetisation isotherms, electrical conductivity, and specific heat of the ZnCr2S4:Pb single crystals. These studies showed that substituting the diamagnetic Pb ion with a large ion radius for the Zn one leads to strong short-range ferromagnetic interactions in the entire temperature range and spin fluctuations in the paramagnetic region at Hdc = 50 kOe. Full article
(This article belongs to the Special Issue Growth and Properties of Crystal Materials)
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10 pages, 3100 KiB  
Article
Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition
by Kyoung-Ho Kim, Minh-Tan Ha, Heesoo Lee, Minho Kim, Okhyun Nam, Yun-Ji Shin, Seong-Min Jeong and Si-Young Bae
Materials 2022, 15(3), 1050; https://doi.org/10.3390/ma15031050 - 29 Jan 2022
Cited by 2 | Viewed by 2214
Abstract
This study examined the microstructural gradation in Sn-doped, n-type Ga2O3 epitaxial layers grown on a two-inch sapphire substrate using horizontal hot-wall mist chemical vapor deposition (mist CVD). The results revealed that, compared to a single Ga2O3 layer [...] Read more.
This study examined the microstructural gradation in Sn-doped, n-type Ga2O3 epitaxial layers grown on a two-inch sapphire substrate using horizontal hot-wall mist chemical vapor deposition (mist CVD). The results revealed that, compared to a single Ga2O3 layer grown using a conventional single-step growth, the double Ga2O3 layers grown using a two-step growth process exhibited excellent thickness uniformity, surface roughness, and crystal quality. In addition, the spatial gradient of carrier concentration in the upper layer of the double layers was significantly affected by the mist flow velocity at the surface, regardless of the dopant concentration distribution of the underlying layer. Furthermore, the electrical properties of the single Ga2O3 layer could be attributed to various scattering mechanisms, whereas the carrier mobility of the double Ga2O3 layers could be attributed to Coulomb scattering owing to the heavily doped condition. It strongly suggests the two-step-grown, lightly-Sn-doped Ga2O3 layer is feasible for high power electronic devices. Full article
(This article belongs to the Special Issue Growth and Properties of Crystal Materials)
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8 pages, 1500 KiB  
Article
Influence of Different Heater Structures on the Temperature Field of AlN Crystal Growth by Resistance Heating
by Ruixian Yu, Chengmin Chen, Guodong Wang, Guangxia Liu, Shouzhi Wang, Xiaobo Hu, Ma Lei, Xiangang Xu and Lei Zhang
Materials 2021, 14(23), 7441; https://doi.org/10.3390/ma14237441 - 4 Dec 2021
Cited by 2 | Viewed by 1501
Abstract
Based on the actual hot zone structure of an AlN crystal growth resistance furnace, the global numerical simulation on the heat transfer process in the AlN crystal growth was performed. The influence of different heater structures on the growth of AlN crystals was [...] Read more.
Based on the actual hot zone structure of an AlN crystal growth resistance furnace, the global numerical simulation on the heat transfer process in the AlN crystal growth was performed. The influence of different heater structures on the growth of AlN crystals was investigated. It was found that the top heater can effectively reduce the axial temperature gradient, and the side heater 2 has a similar effect on the axial gradient, but the effect feedback is slightly weaker. The axial temperature gradient tends to increase when the bottom heater is added to the furnace, and the adjustable range of the axial temperature gradient of the side 1 heater + bottom heater mode is the largest. Our work will provide important reference values for AlN crystal growth by the resistance method. Full article
(This article belongs to the Special Issue Growth and Properties of Crystal Materials)
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