Research Progress of GaN Crystals: Growth and Doping
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Chemistry".
Deadline for manuscript submissions: 20 July 2024 | Viewed by 74
Special Issue Editor
Interests: crystal growth; wide bandgap semiconductor; GaN crystal; AlN crystal; perovskite crystal
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Gallium Nitride (GaN) crystals are wide-bandgap semiconductor materials with high breakdown voltage and better electron mobility. They possess many excellent optical and electrical characteristics. These have been widely used in lasers, high voltage and high-frequency power electronic devices, possessing broad application prospects in areas such as solid-state lighting, data storage, image display, ultraviolet detectors, new-energy vehicles, and communication. Studying the growth and properties of GaN crystal materials has greatly promoted the development of optoelectronic and electronic devices. However, low-quality GaN crystals with higher dislocation density, low transparency, and small radius of curvature do not meet the requirements of high-performance devices. Therefore, the growth of high-quality, large-size, and lower-cost crystals is a prerequisite for promoting their application and enhancing device performance. Furthermore, crystal doping can alter properties and extend application range.
In this Special Issue, we will publish research into physical and chemical phenomena related to the vapor and liquid phase growth of GaN crystal materials, as well as theoretical and experimental studies within these processes. Concurrently, we will also focus on the research analysis that explores the influence of doping on the variation in crystal properties.
It is my pleasure to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are all welcome.
Dr. Lei Zhang
Guest Editor
Manuscript Submission Information
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Keywords
- GaN crystal growth
- vapor phase growth
- liquid phase growth
- doping
- crystalline surfaces
- crystalline interface
- crystallization mechanisms
- characterization techniques of crystal
- numerical simulation of crystal
