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Preparation of Thin Films by PVD/CVD Deposition Techniques
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Preparation of Thin Films by PVD/CVD Deposition Techniques

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: 20 May 2024 | Viewed by 1509

Special Issue Editors

Dr. Hao Du

E-Mail Website
Guest Editor
School of Mechanical Engineering, Guizhou University, Guiyang, China
Interests: sputter deposition; glow discharge and plasma; film growth; film characterizations; density functional theory
Dr. Rui Shu

E-Mail Website
Guest Editor
1. Department of Science and Technology (ITN), Linköping University, SE-601 74 Norrköping, Sweden
2. Texas Center for Superconductivity at UH (TcSUH), University of Houston, Houston, TX, USA
Interests: coating for fuel cells; thermoelectrics; superconductors; protective coatings
Dr. Liuquan Yang

E-Mail Website
Guest Editor
Institute of Functional Surfaces, School of Mechanical Engineering, University of Leeds, Leeds LS2 9JT, UK
Interests: surface engineering; thin film deposition; tribology in demanding environment
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Over the past few decades, Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) have remained at the forefront of thin film synthesis techniques. Today, they stand as indispensable tools in the production of thin films employed across diverse fields such as wear and corrosion protection, electronics, optics, photovoltaics, hydrogen energy, catalysis, and more. The primary objective of this Special Issue is to provide a comprehensive platform for presenting the latest advancements in the preparation, characterization, and applications of novel films grown through these two techniques, as well as to enhance the understanding of thin film growth processes, enabling precise control in PVD and CVD methodologies.

We welcome the submissions of both research papers and review articles. Potential research topics that we encourage contributors to explore include, but are not limited to, the following:

  • Fundamentals of PVD/CVD processes;
  • Compositional and structural design of thin films;
  • Film growth and structure;
  • Thin film characterization;
  • Modelling and theoretical studies of film materials;
  • Properties and performance of thin films;
  • Engineering applications of PVD/CVD thin films.

Dr. Hao Du
Dr. Rui Shu
Dr. Liuquan Yang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • physical vapor deposition
  • chemical vapor deposition
  • thin films
  • coatings

Published Papers (2 papers)

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Research

13 pages, 5729 KiB  
Article
Effects of O2/Ar Ratio on Preparation and Dielectric Properties of CaZrO3 Films by Radio Frequency (RF) Magnetron Sputtering
by Mingjian Ding, Bing Xie, Ming Lv and Zhenya Lu
Materials 2024, 17(5), 1120; https://doi.org/10.3390/ma17051120 - 29 Feb 2024
Viewed by 553
Abstract
CaZrO3 (CZO) thin films were deposited on Pt/Ti/SiO2/Si substrates at 450 °C by radio-frequency magnetron sputtering technology. The microstructures and dielectric properties of CZO thin films were investigated. X-ray diffraction analysis reveals that the perovskite orthogonal CZO phase would be [...] Read more.
CaZrO3 (CZO) thin films were deposited on Pt/Ti/SiO2/Si substrates at 450 °C by radio-frequency magnetron sputtering technology. The microstructures and dielectric properties of CZO thin films were investigated. X-ray diffraction analysis reveals that the perovskite orthogonal CZO phase would be promoted by a higher O2 partial pressure in the flow ratio of O2/Ar after thin films were annealed at 700 °C for 3 h in air. The films prepared under the flow ratio of O2/Ar (20:40, 30:40 and 40:40) show the main perovskite crystal phase of CaZrO3 with a small amount of Ca0.2Zr0.8O1.8. The main crystal phase was Ca0.2Zr0.8O1.8 when the film was deposited under an O2/Ar ratio of 40:10. The annealed film with a 40:40 O2/Ar ratio exhibits a dielectric performance with a high dielectric constant (εr) of 25 at 1 MHz, a temperature coefficient of permittivity of not more than 122.7 ppm/°C from 0 °C to 125 °C, and a low leakage current density of about 2 × 10−7 A/cm2 at 30 V with an ohmic conduction mechanism. Full article
(This article belongs to the Special Issue Preparation of Thin Films by PVD/CVD Deposition Techniques)
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16 pages, 11343 KiB  
Article
Growth and Structural Characterization of h-LuMnO3 Thin Films Deposited by Direct MOCVD
by Abderrazzak Ait Bassou, Lisete Fernandes, José R. Fernandes, Fábio G. Figueiras and Pedro B. Tavares
Materials 2024, 17(1), 211; https://doi.org/10.3390/ma17010211 - 30 Dec 2023
Viewed by 648
Abstract
In this work, we investigated the MOCVD conditions to synthesize thin films with the hexagonal P63cm h-LuMnO3 phase as a potential low-band gap ferroelectric material. The main parameters investigated were the ratio of organometallic starting materials, substrate temperature, and annealing [...] Read more.
In this work, we investigated the MOCVD conditions to synthesize thin films with the hexagonal P63cm h-LuMnO3 phase as a potential low-band gap ferroelectric material. The main parameters investigated were the ratio of organometallic starting materials, substrate temperature, and annealing effect. Two different substrates were used in the study: fused silica (SiO2) glass and platinized silicon (Pt\Ti\SiO2\Si(100)). In order to investigate the thermodynamic stability and quality of the developed phases, a detailed analysis of the crystal structure, microstructure, morphology, and roughness of the films was performed by X-ray diffractometer, scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), Raman spectroscopy, and piezoelectric force microscopy (PFM). Molar compositions in the film within 0.93 < |Lu|/|Mn| < 1.33 were found to be suitable for obtaining a single-phase h-LuMnO3. The best films were obtained by depositions at 700 °C, followed by thermal treatments at 800 °C for long periods of up to 12 h. These films exhibited a highly crystalline hexagonal single phase with a relatively narrow direct band gap, around 1.5 eV, which is within the expected values for the h-LuMnO3 system. Full article
(This article belongs to the Special Issue Preparation of Thin Films by PVD/CVD Deposition Techniques)
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