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Applied Sciences
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Advanced Infrared Semiconductor Lasers and Integrated Optics Devices
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Advanced Infrared Semiconductor Lasers and Integrated Optics Devices

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Optics and Lasers".

Deadline for manuscript submissions: closed (30 June 2023) | Viewed by 2500

Special Issue Editors

Dr. Cheng-Ao Yang

E-Mail Website
Guest Editor
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Interests: semiconductor laser diodes; T2SL detectors; quantum dot lasers and detectors; molecule beam epitaxy; antimony; infrared lasers and detectors
Special Issues, Collections and Topics in MDPI journals
Dr. Ying Yu

E-Mail Website
Guest Editor
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Interests: molecular beam epitaxy; quantum light source; quantum well; quantum wire; quantum dot; superlattice; laser diodes

Special Issue Information

Dear Colleagues，

Infrared semiconductor laser diodes and integrated devices are important light sources due to their incomparable tuning ability, high efficiency and highly integrated features.

The new generation of infrared semiconductor lasers has a greater focus on higher power outputs, low power consumption, purer spectra, narrower linewidths, advanced cascade structures, integrated devices and new laser-generated quantum mechanisms; these play important roles in industries such as detection, Lidar, gas sensing, computing, medical treatment, 6G, quantum technology, automatic pilot and advanced manufacturing. This Special Issue will focus on advances in the mechanisms, materials, processes and applications of infrared semiconductor lasers and integrated devices.

Potential topics include, but are not limited to:

  • High-power infrared semiconductor lasers;
  • Single-mode lasers including DFB, DBR, ECL and photonic crystal lasers;
  • Infrared cascade lasers including ICL and QCL;
  • Narrow-linewidth DFB for silicon photonics;
  • Low-dimensional infrared laser materials and quantum dot lasers;
  • Hybrid- and on-chip-integrated silicon-based lasers.
  • Hybrid- and on-chip-integrated silicon-based lasers and relative MOEMS devices.

Dr. Cheng-Ao Yang
Dr. Ying Yu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • infrared laser diode
  • DFB
  • DBR
  • interband cascade laser
  • quantum cascade laser
  • hybrid integrated laser
  • on-chip laser

Published Papers (3 papers)

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Research

11 pages, 2081 KiB  
Article
On-Demand Waveguide-Integrated Microlaser-on-Silicon
by Byung-Ju Min, Yeon-Ji Kim and You-Shin No
Appl. Sci. 2023, 13(16), 9329; https://doi.org/10.3390/app13169329 - 17 Aug 2023
Viewed by 616
Abstract
The integration of high-quality III–V light sources on the Si platform has encountered a challenge that demands a highly precise on-demand addressability of single devices in a significantly reduced integration area. However, simple schemes to address the issue without causing major optical losses [...] Read more.
The integration of high-quality III–V light sources on the Si platform has encountered a challenge that demands a highly precise on-demand addressability of single devices in a significantly reduced integration area. However, simple schemes to address the issue without causing major optical losses remain elusive. Here, we propose a waveguide-integrated microlaser-on-silicon in which the III–V/Si integration requires only a small micron-sized post structure with a diameter of <2 µm and enables efficient light coupling with an estimated coupling efficiency of 44.52%. Top-down fabricated high-quality microdisk cavities with an active gain medium were precisely micro-transferred on a small Si-post structure that was rationally designed in the vicinity of a strip-type Si waveguide (WG). Spectroscopic measurements exhibit successful lasing emission with a threshold of 378.0 µW, bi-directional light coupling, and a propagation of >50 µm through the photonic Si WG. Numerical study provides an in-depth understanding of light coupling and verifies the observations in the experiment. We believe that the proposed microlaser-on-Si is a simple and efficient scheme requiring a minimum integration volume smaller than the size of the light source, which is hard to achieve in conventional integration schemes and is readily applicable to various on-demand integrated device applications. Full article
(This article belongs to the Special Issue Advanced Infrared Semiconductor Lasers and Integrated Optics Devices)
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14 pages, 11814 KiB  
Article
Radiation Beam Width and Beam Direction Electronic Control of Transparent and Compact Vivaldi Antennas
by Amani Cherif, Mohamed Himdi, Xavier Castel, Quentin Simon, Saber Dakhli and Fethi Choubani
Appl. Sci. 2023, 13(13), 7878; https://doi.org/10.3390/app13137878 - 05 Jul 2023
Viewed by 691
Abstract
In this paper, we present a study on a broadband transparent tapered slot antenna. In general, the objective of achieving optical transparency is to enable antennas to seamlessly integrate into windows, offering an aesthetically pleasing and inconspicuous appearance. The aim of our research [...] Read more.
In this paper, we present a study on a broadband transparent tapered slot antenna. In general, the objective of achieving optical transparency is to enable antennas to seamlessly integrate into windows, offering an aesthetically pleasing and inconspicuous appearance. The aim of our research is to develop antennas that possess the ability to adjust horizontal plane beams across a wide frequency range, from 24 to 28 GHz, for 5G applications. This structure combines three antennas into a single unit, providing an advantage in terms of saving space. Furthermore, this structure offers the possibility of choosing between using a single antenna to obtain a directional beam in the −90°, 0°, or +90° directions (depending on the activated antenna) corresponding to three states, or the combination between two states to obtain another three additional states. The combination of the three states also allows for the acquisition of another state. At this point, the total number of states is 23 − 1. Only three PIN diodes are employed to switch between all states. Additionally, by adjusting the bias values of the PIN diodes, which function as variable resistors, the antenna beamwidth can be adjusted in order to achieve a coverage of 300°, offering more radiation pattern reconfigurability. The proposed method offers several advantages, including simplicity and feasibility in controlling the beamwidth and the beam direction electronically. This structure can be easily integrated into the development of fifth-generation communication systems. Full article
(This article belongs to the Special Issue Advanced Infrared Semiconductor Lasers and Integrated Optics Devices)
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12 pages, 2600 KiB  
Article
High-Power, High-Efficiency GaSb-Based Laser with Compositionally Linearly Graded AlGaAsSb Layer
by Yihang Chen, Chengao Yang, Tianfang Wang, Hongguang Yu, Jianmei Shi, Xiangbin Su, Yu Zhang, Youwen Zhao, Cunzhu Tong, Donghai Wu, Yingqiang Xu, Haiqiao Ni and Zhichuan Niu
Appl. Sci. 2023, 13(9), 5506; https://doi.org/10.3390/app13095506 - 28 Apr 2023
Viewed by 880
Abstract
We propose a novel graded AlGaAsSb layer growth method to achieve a super-linear interface by precisely controlling the cell temperature and valve position. Atomically smooth surface and lattice-matched epitaxy was confirmed by AFM and the HRXRD characterization of the graded AlGaAsSb layer sample. [...] Read more.
We propose a novel graded AlGaAsSb layer growth method to achieve a super-linear interface by precisely controlling the cell temperature and valve position. Atomically smooth surface and lattice-matched epitaxy was confirmed by AFM and the HRXRD characterization of the graded AlGaAsSb layer sample. With the inserted graded layer between the cladding and waveguide layers, high-power, high-efficiency GaSb-based laser emitters and laser bars were confirmed. The linearly graded interface layer smooths the potential barrier peak between the cladding and waveguide layers, which resulted in a low turn-on voltage of 0.65 V and an ultra-low series resistance of 0.144 Ω. A maximum continuous-wave output power of 1.8 W was obtained with a high power conversion efficiency of 28% at 1.1 A and 12% at 8 A. A facet-coated laser bar was also fabricated with a record-high CW output power of 18 W. A high internal quantum efficiency of 83 was maintained at 40 °C, implying improved carrier injection efficiency, which benefits from the built-in electric field of the composition-graded AlGaAsSb layer. Full article
(This article belongs to the Special Issue Advanced Infrared Semiconductor Lasers and Integrated Optics Devices)
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