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Silicon-Based Optical Sensors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Optical Sensors".

Deadline for manuscript submissions: closed (31 July 2023) | Viewed by 4442

Special Issue Editor


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Guest Editor
James Watt School of Engineering, University of Glasgow, Glasgow, UK
Interests: silicon photonics; germanium; quantum photonics; mid-infrared; lab-on-chip; sensing

Special Issue Information

Dear Colleagues,

Silicon photonics has unrivalled potential to enable low-cost, mass manufacturing of photonic components by leveraging the already huge investments made in computer chip foundries over the last half-century. Silicon-based optical sensors can provide truly disruptive technologies by enabling system-on-a-chip, lab-on-a-chip, and sensor-fusion-on-a-chip solutions for the automotive, security, pharmaceutical, medical, agriculture, and environmental monitoring industries, to name a few. These technologies could even find their way into future smartphones and will form an essential part of the Internet of Things.

In this issue, our goal is to highlight the various types of silicon-based optical sensors that have been demonstrated, such as absorption, reflectometry, surface plasmon, cavity resonance, interferometry, etc. We are interested in bulk sensors and surface sensors, as well as integrated photonic waveguide sensors based on refractive index shift or direct optical absorption.

Contributions are not limited purely to silicon, but also silicon-compatible materials such as germanium, silicon germanium, silicon nitride, and silicon oxide, or which are derived by modifications of silicon, such as porous silicon and amorphous silicon. Both review articles and original research papers relating to silicon-based optical sensors are sought.

Dr. Kevin Gallacher
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Imaging sensors
  • Micro-optical–electrical–mechanical system sensors
  • Optical pressure sensors
  • Biosensors
  • Integrated waveguide sensors
  • Microcavity sensors
  • Interferometer sensors
  • Raman sensors
  • Atomic/molecular absorption sensors
  • Porous silicon sensors
  • Silicon germanium sensors
  • Silica on silicon sensors
  • Silicon oxynitride sensors
  • Silicon nitride sensors

Published Papers (1 paper)

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Review

27 pages, 12233 KiB  
Review
An Overview of CMOS Photodetectors Utilizing Current-Assistance for Swift and Efficient Photo-Carrier Detection
by Gobinath Jegannathan, Volodymyr Seliuchenko, Thomas Van den Dries, Thomas Lapauw, Sven Boulanger, Hans Ingelberts and Maarten Kuijk
Sensors 2021, 21(13), 4576; https://doi.org/10.3390/s21134576 - 04 Jul 2021
Cited by 4 | Viewed by 3744 | Correction
Abstract
This review paper presents an assortment of research on a family of photodetectors which use the same base mechanism, current assistance, for the operation. Current assistance is used to create a drift field in the semiconductor, more specifically silicon, in order to improve [...] Read more.
This review paper presents an assortment of research on a family of photodetectors which use the same base mechanism, current assistance, for the operation. Current assistance is used to create a drift field in the semiconductor, more specifically silicon, in order to improve the bandwidth and the quantum efficiency. Based on the detector and application, the drift field can be static or modulated. Applications include 3D imaging (both direct and indirect time-of-flight), optical receivers and fluorescence lifetime imaging. This work discusses the current-assistance principle, the various photodetectors using this principle and a comparison is made with other state-of-the-art photodetectors used for the same application. Full article
(This article belongs to the Special Issue Silicon-Based Optical Sensors)
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