Silicon and Silicon Nitride Integrated Photonics: Challenges and Opportunities

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".

Deadline for manuscript submissions: 10 June 2024 | Viewed by 5377

Special Issue Editors

Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
Interests: silicon photonics; photonic crystal; chalcogenide photonics; nonlinear photonics; phase-change materials
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Guest Editor
State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Interests: silicon photonics; photonic integration circuits

Special Issue Information

Dear Colleagues,

The field of integrated photonics has been revolutionized by the use of silicon and silicon nitride as a platform for developing photonic devices. Silicon photonics is now widely used in the telecommunications industry, while silicon nitride photonics is emerging as a promising platform for a range of applications. This Special Issue explores the challenges and opportunities of silicon and silicon nitride integrated photonics. The Special Issue covers topics such as the design and fabrication of waveguides and other optical devices, the integration of nonlinear optics, and the development of integrated circuits for photonics. Thus, we encourage you to contribute review papers, original research short letters, or long articles on such topics as:

  1. Silicon and silicon nitride passive waveguides and devices: design optimization, fabrication techniques, and characterization;
  2. Silicon and silicon nitride active photonic devices: modulators, detectors, filters, switches, resonators, and amplifiers;
  3. Integrated nonlinear optics including frequent combs and supercontinuum generation;
  4. Integration of silicon and silicon nitride photonics with other material systems: 2D materials, III–V/II–VI semiconductor compounds, chalcogenide glasses, LiNbOx, VOx, magneto-optic materials, phase-change materials, etc.;
  5. Applications of silicon and silicon nitride photonics, e.g., programmable photonics, mode manipulations, sensors, MIR photonics, on-chip spectrometers, etc.

Submissions on other topics are also welcome if they are related to the theme of the Special Issue.

Dr. Peipeng Xu
Dr. Liangjun Lu
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • photonic device design and optimization
  • fabrication techniques and characterization
  • integrated nonlinear optics
  • integration of silicon and silicon nitride photonics with other material systems
  • on-chip communication and signal processing
  • quantum information processing
  • biosensing applications
  • electronic–photonic integration and system-level design
  • integrated visible/MIR photonics
  • market trends and industry challenges

Published Papers (4 papers)

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Research

9 pages, 3147 KiB  
Communication
Inverse Design of Ultra-Compact and Low-Loss Optical Phase Shifters
by Junpeng Liao, Ye Tian, Zhe Kang and Xiaowei Zhang
Photonics 2023, 10(9), 1030; https://doi.org/10.3390/photonics10091030 - 08 Sep 2023
Viewed by 948
Abstract
In previous works, inverse design methods have primarily focused on manipulating the optical power to achieve specific design targets. In this paper, we use the inverse design method to enable the precise engineering of the optical phase. As a proof of concept, we [...] Read more.
In previous works, inverse design methods have primarily focused on manipulating the optical power to achieve specific design targets. In this paper, we use the inverse design method to enable the precise engineering of the optical phase. As a proof of concept, we present a series of phase shifters (PSs) with varying phase shifts, which are inversely designed and theoretically validated on the silicon-on-insulator (SOI) platform. The designed PSs exhibit remarkable accuracy, with deviations of below 1°. These proposed PSs feature an ultra-compact footprint of 3 µm in length and offer superior fabrication tolerances compared to conventional structures. Over the 1535–1565 nm bandwidth, the discrepancy between the actual and target phase shifts remains below ±1° for all phase shifters, while the insertion loss is consistently below 0.035 dB. Moreover, the feasibility of the designed five PSs is verified using 2 × 2 multimode interference couplers (MMI). Full article
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11 pages, 2285 KiB  
Article
An Efficient Silicon Grating Coupler for a 2 μm Waveband Based on a Polysilicon Overlay
by Yifan Wu, Yuzhou Wu, Jiefeng Xu, Xi Wang, You Wu, Yanglin Chen, Jiahang Li and Ke Xu
Photonics 2023, 10(8), 952; https://doi.org/10.3390/photonics10080952 - 20 Aug 2023
Viewed by 1138
Abstract
The short-wavelength mid-infrared spectral range of the 2 μm waveband has the advantages of low transmission loss and broad gain bandwidth, making it a promising candidate for the next optical fiber communication window. It is thus highly desired to develop high-performance silicon photonic [...] Read more.
The short-wavelength mid-infrared spectral range of the 2 μm waveband has the advantages of low transmission loss and broad gain bandwidth, making it a promising candidate for the next optical fiber communication window. It is thus highly desired to develop high-performance silicon photonic components in this waveband. Here, an efficient dual-layer grating coupler was designed on a 220 nm thick silicon-on-insulator based on raised polysilicon to address the low directionality issue. For the fiber tilted at an angle of 10°, the grating coupler’s simulated coupling efficiency reaches 80.3% (−0.95 dB) at a wavelength of 2002 nm. The 1 dB bandwidth is 66 nm. The structure is completely compatible with the standard silicon photonic fabrication process, making it suitable for large volume fabrication. Full article
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7 pages, 2257 KiB  
Communication
High-Directionality Silicon Nitride Antenna Based on Distributed Bragg Reflector for Optical Phased Array
by Jinmei Wei, Yan Li, Yuejun Zhang, Tingge Dai, Xiangyu Li, Xiaowei Zhang and Ying Wang
Photonics 2023, 10(8), 871; https://doi.org/10.3390/photonics10080871 - 27 Jul 2023
Viewed by 1001
Abstract
Optical phased arrays (OPAs) have great potential in the fields of integrated solid-state light detection and ranging. The ranging distance of an OPA can be further enlarged by improving the directionality of the grating antenna. A high-directionality silicon nitride grating antenna with a [...] Read more.
Optical phased arrays (OPAs) have great potential in the fields of integrated solid-state light detection and ranging. The ranging distance of an OPA can be further enlarged by improving the directionality of the grating antenna. A high-directionality silicon nitride grating antenna with a distributed Bragg reflector (DBR) is proposed. The DBR consists of a stack of silicon nitride and silicon dioxide layers, which are utilized as the bottom reflectors to further reduce downward radiation. In a simulation, the directionality of the antenna exceeded 71.6% within the wavelength range of 1420–1740 nm. Additionally, the directionality of the antenna can achieve 97.6% at 1550 nm. Compared to a grating antenna without a DBR, the directionality is improved by 1.52 dB. Moreover, the proposed silicon nitride grating antenna has a large fabrication tolerance and is compatible with CMOS fabrication techniques, showing great potential for enhancing the performance of the integrated optical phased array. Full article
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12 pages, 3843 KiB  
Communication
Broadband and Low-Loss Silicon Photonic Directional Coupler for Signal Power Tapping on the 3 μm SOI Waveguide Platform
by Dongsheng Lv, Longsheng Wu, Chenyang Liu, Ang Li, Ruxue Wang and Aimin Wu
Photonics 2023, 10(7), 776; https://doi.org/10.3390/photonics10070776 - 04 Jul 2023
Cited by 3 | Viewed by 1793
Abstract
Silicon photonics (SiPh) has emerged as a promising technology for photonic integrated circuits (PICs). One of the basic components in SiPh is the directional coupler (DC), which plays an important role in signal monitoring with the requirement of low wavelength dependence and low [...] Read more.
Silicon photonics (SiPh) has emerged as a promising technology for photonic integrated circuits (PICs). One of the basic components in SiPh is the directional coupler (DC), which plays an important role in signal monitoring with the requirement of low wavelength dependence and low loss. This paper proposes a broadband and low-loss DC designed for signal power tapping on the 3 μm silicon-on-insulator (SOI) waveguide platform. By utilizing the advantages of multi-micron waveguides and replacing one of the straight waveguides with an optimized arc-shaped waveguide in the coupling region, the proposed DC enhances spectral stability and improves transmission with negligible loss. Experimental evidence indicates that the proposed DC showcases a minimal variation in the tapping ratio. From 1470 nm to 1630 nm, the largest deviation away from the tapping ratio at 1550 nm is 1.433%. Additionally, the device exhibits a low excess loss of −0.27 dB. These results suggest that the proposed device is well-suited to reliable signal power tapping and monitoring, particularly within PICs. Full article
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