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Semiconductor and Nanophotonic Devices
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Semiconductor and Nanophotonic Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: closed (31 August 2022) | Viewed by 17986

Special Issue Editor

Dr. Bruno Romeira

E-Mail Website
Guest Editor
International Iberian Nanotechnology Laboratory, Braga, Portugal
Interests: semiconductor physics; low-dimensional nanostructures; nanophotonics; neuromorphic devices.

Special Issue Information

Dear Colleagues,

Nanophotonics, which combines the latest advances in nanotechnology, nanofabrication, and nanostructured materials, has become in the past few years a key area of research and applied technology from the physics, material science, and engineering fields. As a result, semiconductor and nanophotonic devices as parts of integrated systems may provide essential components in miniaturized optical systems, such as for communication, computing, storage, sensing, metrology, quantum, and neuromorphic applications.

This Special Issue aims at collecting a compilation of articles that demonstrate the continuous effort in developing advanced semiconductor and nanophotonic devices capable of generating, detecting, modulating, processing, and manipulating light at subwavelength scales, at ultrafast speeds, and at ultralow energy levels. Importantly, this Special Issue covers a variety of physical phenomena that are now being discovered in nanophotonic structures, nanomaterials, and devices as the scales of light–matter interaction becomes comparable to the atomic scale. This promises unique opportunities for a variety of cutting-edge technologies with exceptional performance and multifunctionalities of interest for ultracompact integrated sensors, quantum sensing, information and computing systems, and neuromorphic computing using light.

Dr. Bruno Romeira
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Metamaterial devices
  • Subwavelength cavities
  • Topological nanophotonic devices
  • 2D-layered semiconductor devices
  • Semiconductor nanophotodetectors
  • Nano-opto-electro-mechanical devices
  • Photonic crystal and plasmonic devices
  • Parity-time symmetry breaking in nanophotonics
  • Semiconductor nanolasers, Fano lasers, nanoLEDs
  • Nanophotonic modulators and phase change materials

Published Papers (7 papers)

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Research

Jump to: Review

16 pages, 5088 KiB  
Article
Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature
by Florian Rothmayr, Edgar David Guarin Castro, Fabian Hartmann, Georg Knebl, Anne Schade, Sven Höfling, Johannes Koeth, Andreas Pfenning, Lukas Worschech and Victor Lopez-Richard
Nanomaterials 2022, 12(6), 1024; https://doi.org/10.3390/nano12061024 - 21 Mar 2022
Cited by 4 | Viewed by 2420
Abstract
Resonant tunneling diode photodetectors appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We fabricated resonant tunneling devices with GaInAsSb absorbers that allow operation in the 2–4 μm range with significant electrical responsivity of [...] Read more.
Resonant tunneling diode photodetectors appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We fabricated resonant tunneling devices with GaInAsSb absorbers that allow operation in the 2–4 μm range with significant electrical responsivity of 0.97 A/W at 2004 nm to optical readout. This paper characterizes the photosensor response contrasting different operational regimes and offering a comprehensive theoretical analysis of the main physical ingredients that rule the sensor functionalities and affect its performance. We demonstrate how the drift, accumulation, and escape efficiencies of photogenerated carriers influence the electrostatic modulation of the sensor’s electrical response and how they allow controlling the device’s sensing abilities. Full article
(This article belongs to the Special Issue Semiconductor and Nanophotonic Devices)
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18 pages, 19730 KiB  
Article
Nanolasers with Feedback as Low-Coherence Illumination Sources for Speckle-Free Imaging: A Numerical Analysis of the Superthermal Emission Regime
by Tao Wang, Can Jiang, Junlong Zou, Jie Yang, Kuiwen Xu, Chaoyuan Jin, Gaofeng Wang, Gian Piero Puccioni and Gian Luca Lippi
Nanomaterials 2021, 11(12), 3325; https://doi.org/10.3390/nano11123325 - 07 Dec 2021
Cited by 7 | Viewed by 2416
Abstract
Lasers distinguish themselves for the high coherence and high brightness of their radiation, features which have been exploited both in fundamental research and a broad range of technologies. However, emerging applications in the field of imaging, which can benefit from brightness, directionality and [...] Read more.
Lasers distinguish themselves for the high coherence and high brightness of their radiation, features which have been exploited both in fundamental research and a broad range of technologies. However, emerging applications in the field of imaging, which can benefit from brightness, directionality and efficiency, are impaired by the speckle noise superimposed onto the picture by the interference of coherent scattered fields. We contribute a novel approach to the longstanding efforts in speckle noise reduction by exploiting a new emission regime typical of nanolasers, where low-coherence laser pulses are spontaneously emitted below the laser threshold. Exploring the dynamic properties of this kind of emission in the presence of optical reinjection we show, through the numerical analysis of a fully stochastic approach, that it is possible to tailor some of the properties of the emitted radiation, in addition to exploiting this naturally existing regime. This investigation, therefore, proposes semiconductor nanolasers as potential attractive, miniaturized and versatile future sources of low-coherence radiation for imaging. Full article
(This article belongs to the Special Issue Semiconductor and Nanophotonic Devices)
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11 pages, 32505 KiB  
Article
Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications
by Sayed Md Tariful Azam, Abu Saleh Md Bakibillah, Md Tanvir Hasan and Md Abdus Samad Kamal
Nanomaterials 2021, 11(12), 3166; https://doi.org/10.3390/nano11123166 - 23 Nov 2021
Cited by 3 | Viewed by 1561
Abstract
In this study, we theoretically investigated the effect of step gate work function on the InGaAs p-TFET device, which is formed by dual material gate (DMG). We analyzed the performance parameters of the device for low power digital and analog applications based on [...] Read more.
In this study, we theoretically investigated the effect of step gate work function on the InGaAs p-TFET device, which is formed by dual material gate (DMG). We analyzed the performance parameters of the device for low power digital and analog applications based on the gate work function difference (∆ϕS-D) of the source (ϕS) and drain (ϕD) side gate electrodes. In particular, the work function of the drain (ϕD) side gate electrodes was varied with respect to the high work function of the source side gate electrode (Pt, ϕS = 5.65 eV) to produce the step gate work function. It was found that the device performance varies with the variation of gate work function difference (∆ϕS-D) due to a change in the electric field distribution, which also changes the carrier (hole) distribution of the device. We achieved low subthreshold slope (SS) and off-state current (Ioff) of 30.89 mV/dec and 0.39 pA/µm, respectively, as well as low power dissipation, when the gate work function difference (∆ϕS-D = 1.02 eV) was high. Therefore, the device can be a potential candidate for the future low power digital applications. On the other hand, high transconductance (gm), high cut-off frequency (fT), and low output conductance (gd) of the device at low gate work function difference (∆ϕS-D = 0.61 eV) make it a viable candidate for the future low power analog applications. Full article
(This article belongs to the Special Issue Semiconductor and Nanophotonic Devices)
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10 pages, 2785 KiB  
Article
Analysis of Excitability in Resonant Tunneling Diode-Photodetectors
by Weikang Zhang, Abdullah Al-Khalidi, José Figueiredo, Qusay Raghib Ali Al-Taai, Edward Wasige and Robert H. Hadfield
Nanomaterials 2021, 11(6), 1590; https://doi.org/10.3390/nano11061590 - 17 Jun 2021
Cited by 8 | Viewed by 2406
Abstract
We investigate the dynamic behaviour of resonant tunneling diode-photodetectors (RTD-PDs) in which the excitability can be activated by either electrical noise or optical signals. In both cases, we find the characteristics of the stochastic spiking behavior are not only dependent on the biasing [...] Read more.
We investigate the dynamic behaviour of resonant tunneling diode-photodetectors (RTD-PDs) in which the excitability can be activated by either electrical noise or optical signals. In both cases, we find the characteristics of the stochastic spiking behavior are not only dependent on the biasing positions but also controlled by the intensity of the input perturbations. Additionally, we explore the ability of RTD-PDs to perform optical signal transmission and neuromorphic spike generation simultaneously. These versatile functions indicate the possibility of making use of RTD-PDs for innovative applications, such as optoelectronic neuromorphic circuits for spike-encoded signaling and data processing. Full article
(This article belongs to the Special Issue Semiconductor and Nanophotonic Devices)
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12 pages, 3239 KiB  
Article
Flexible Control of Two-Channel Transmission and Group Delay in an Optomechanical System with Double Quantum Dots Driven by External Field
by Faqiang Wang, Weici Liu, Zhongchao Wei, Hongyun Meng and Hongzhan Liu
Nanomaterials 2021, 11(6), 1554; https://doi.org/10.3390/nano11061554 - 12 Jun 2021
Cited by 1 | Viewed by 1727
Abstract
With the presence of a driving field applied to double quantum dots and a control field applied on the cavity, the transmission performance and group delay effect of a probe field have been theoretically studied in a hybrid optomechanical system (HOMS). Due to [...] Read more.
With the presence of a driving field applied to double quantum dots and a control field applied on the cavity, the transmission performance and group delay effect of a probe field have been theoretically studied in a hybrid optomechanical system (HOMS). Due to the interaction between the mechanical mode and the double quantum dots system, double optomechanically induced transparency (OMIT) arises in the HOMS. With the assistance of a driving field, the system can be tuned to switch on any one of the two OMIT windows, switch on both of the two OMIT windows or switch off both of the two OMIT windows by dynamically adjusting control of the optical field and the driving field. Furthermore, the transmitted probe fields of the two OMIT windows can be tuned to be absorbed or amplified with proper parameters of the driving field and control field. Moreover, the transmission properties of the two OMIT windows are asymmetrical. One can obtain the maximum group delay time of the probe field by optimizing the amplitude and phase of the driving field. These results provide a new way for constructing optically controlled nanostructured photonic switch and storage devices. Full article
(This article belongs to the Special Issue Semiconductor and Nanophotonic Devices)
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Review

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17 pages, 4020 KiB  
Review
Single-Photon Counting with Semiconductor Resonant Tunneling Devices
by Andreas Pfenning, Sebastian Krüger, Fauzia Jabeen, Lukas Worschech, Fabian Hartmann and Sven Höfling
Nanomaterials 2022, 12(14), 2358; https://doi.org/10.3390/nano12142358 - 09 Jul 2022
Cited by 7 | Viewed by 2083
Abstract
Optical quantum information science and technologies require the capability to generate, control, and detect single or multiple quanta of light. The need to detect individual photons has motivated the development of a variety of novel and refined single-photon detectors (SPDs) with enhanced detector [...] Read more.
Optical quantum information science and technologies require the capability to generate, control, and detect single or multiple quanta of light. The need to detect individual photons has motivated the development of a variety of novel and refined single-photon detectors (SPDs) with enhanced detector performance. Superconducting nanowire single-photon detectors (SNSPDs) and single-photon avalanche diodes (SPADs) are the top-performer in this field, but alternative promising and innovative devices are emerging. In this review article, we discuss the current state-of-the-art of one such alternative device capable of single-photon counting: the resonant tunneling diode (RTD) single-photon detector. Due to their peculiar photodetection mechanism and current-voltage characteristic with a region of negative differential conductance, RTD single-photon detectors provide, theoretically, several advantages over conventional SPDs, such as an inherently deadtime-free photon-number resolution at elevated temperatures, while offering low dark counts, a low timing jitter, and multiple photon detection modes. This review article brings together our previous studies and current experimental results. We focus on the current limitations of RTD-SPDs and provide detailed design and parameter variations to be potentially employed in next-generation RTD-SPD to improve the figure of merits of these alternative single-photon counting devices. The single-photon detection capability of RTDs without quantum dots is shown. Full article
(This article belongs to the Special Issue Semiconductor and Nanophotonic Devices)
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29 pages, 4883 KiB  
Review
Modal Properties of Photonic Crystal Cavities and Applications to Lasers
by Marco Saldutti, Meng Xiong, Evangelos Dimopoulos, Yi Yu, Mariangela Gioannini and Jesper Mørk
Nanomaterials 2021, 11(11), 3030; https://doi.org/10.3390/nano11113030 - 12 Nov 2021
Cited by 21 | Viewed by 4034
Abstract
Photonic crystal cavities enable strong light–matter interactions, with numerous applications, such as ultra-small and energy-efficient semiconductor lasers, enhanced nonlinearities and single-photon sources. This paper reviews the properties of the modes of photonic crystal cavities, with a special focus on line-defect cavities. In particular, [...] Read more.
Photonic crystal cavities enable strong light–matter interactions, with numerous applications, such as ultra-small and energy-efficient semiconductor lasers, enhanced nonlinearities and single-photon sources. This paper reviews the properties of the modes of photonic crystal cavities, with a special focus on line-defect cavities. In particular, it is shown how the fundamental resonant mode in line-defect cavities gradually turns from Fabry–Perot-like to distributed-feedback-like with increasing cavity size. This peculiar behavior is directly traced back to the properties of the guided Bloch modes. Photonic crystal cavities based on Fano interference are also covered. This type of cavity is realized through coupling of a line-defect waveguide with an adjacent nanocavity, with applications to Fano lasers and optical switches. Finally, emerging cavities for extreme dielectric confinement are covered. These cavities promise extremely strong light–matter interactions by realizing deep sub-wavelength mode size while keeping a high quality factor. Full article
(This article belongs to the Special Issue Semiconductor and Nanophotonic Devices)
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