Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
7.4
5.3
Journals
Nanomaterials
Special Issues
Nanoscale Electrical Characterization of Low Dimensional Materials for Electronics
share announcement

Nanoscale Electrical Characterization of Low Dimensional Materials for Electronics

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (31 December 2020) | Viewed by 31747

Special Issue Editors

Dr. Filippo Giannazzo

E-Mail Website
Guest Editor
Consiglio Nazionale delle Ricerche–Institute for Microelectronics and Microsystems (CNR-IMM), Strada VIII, I-95121 Catania, Italy
Interests: 2D materials (graphene, transition metal dichalcogenides); wide-bandgap semiconductors (SiC, GaN); high-power and high-frequency electronics; electrical atomic force microscopy (C-AFM, SCM, SSRM)
Special Issues, Collections and Topics in MDPI journals
Dr. Umberto Celano

E-Mail Website
Guest Editor
Interuniversitair Micro-Electronica Centrum (IMEC), Leuven, Belgium
Interests: nanoelectronics; functional nanomaterials; 2D materials; VLSI metrology; scanning probe microscopy

Special Issue Information

Dear colleagues,

Low dimensional materials (including the broad family of 2D materials, 1D nanotube or nanowires and 0 D quantum dots) are currently gaining increasing interest in electronics/optoelectronics, as they allow us to extend the performance of traditional semiconductor devices or to demonstrate completely new device concepts and exciting physics.

In this context, combining nanometric spatial resolution with a wide range of physical properties that can be detected, scanning-probe-based characterization techniques have proved themselves to be essential tools to investigate the structural, electrical, chemical and optical properties of low dimensional systems and their heterojunctions with bulk (3D) semiconductors.

This Special Issue will be devoted to new developments in nanoscale electrical characterization techniques, and their applications to the analysis of low dimensional materials, including (i) synthesis, (ii) integration and (iii) novel device architectures. The Special Issue is open to correlation studies of local electrical/optical measurements with high resolution structural/chemical analyses, as well as to theoretical and modelling works for the interpretation of experimental results in these nanoscale systems.

It is our pleasure to invite you to submit a manuscript for this Special Issue. Full papers, short communications, and reviews are welcome.

Dr. Filippo Giannazzo
Dr. Umberto Celano
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Scanning Probe Microscopy
  • Scanning Tunneling Microscopy
  • Conductive Atomic Force Microscopy
  • Scanning Capacitance Microscopy
  • Scanning Microwave Impedance Microscopy
  • Kelvin Probe Force Microscopy
  • Scanning Near Field Optical Microscopy
  • 2D Materials
  • Nanowires
  • Quantum dots

Published Papers (7 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

Jump to: Review

15 pages, 2544 KiB  
Article
Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges
by Umberto Celano, Andres Gomez, Paola Piedimonte, Sabine Neumayer, Liam Collins, Mihaela Popovici, Karine Florent, Sean R. C. McMitchell, Paola Favia, Chris Drijbooms, Hugo Bender, Kristof Paredis, Luca Di Piazza, Stephen Jesse, Jan Van Houdt and Paul van der Heide
Nanomaterials 2020, 10(8), 1576; https://doi.org/10.3390/nano10081576 - 11 Aug 2020
Cited by 16 | Viewed by 3676
Abstract
The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to [...] Read more.
The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to overcome the existing problems of perovskite-based integrated ferroelectrics. However, both the control of ferroelectricity in doped-HfO2 and the direct characterization at the nanoscale of ferroelectric phenomena, are increasingly difficult to achieve. The main limitations are imposed by the inherent intertwining of ferroelectric and dielectric properties, the role of strain, interfaces and electric field-mediated phase, and polarization changes. In this work, using Si-doped HfO2 as a material system, we performed a correlative study with four scanning probe techniques for the local sensing of intrinsic ferroelectricity on the oxide surface. Putting each technique in perspective, we demonstrated that different origins of spatially resolved contrast can be obtained, thus highlighting possible crosstalk not originated by a genuine ferroelectric response. By leveraging the strength of each method, we showed how intrinsic processes in ultrathin dielectrics, i.e., electronic leakage, existence and generation of energy states, charge trapping (de-trapping) phenomena, and electrochemical effects, can influence the sensed response. We then proceeded to initiate hysteresis loops by means of tip-induced spectroscopic cycling (i.e., “wake-up”), thus observing the onset of oxide degradation processes associated with this step. Finally, direct piezoelectric effects were studied using the high pressure resulting from the probe’s confinement, noticing the absence of a net time-invariant piezo-generated charge. Our results are critical in providing a general framework of interpretation for multiple nanoscale processes impacting ferroelectricity in doped-hafnia and strategies for sensing it. Full article
(This article belongs to the Special Issue Nanoscale Electrical Characterization of Low Dimensional Materials for Electronics)
►▼ Show Figures

Graphical abstract

11 pages, 2639 KiB  
Article
Comprehensive Electrostatic Modeling of Exposed Quantum Dots in Graphene/Hexagonal Boron Nitride Heterostructures
by Eberth A. Quezada-López, Zhehao Ge, Takashi Taniguchi, Kenji Watanabe, Frédéric Joucken and Jairo Velasco, Jr.
Nanomaterials 2020, 10(6), 1154; https://doi.org/10.3390/nano10061154 - 12 Jun 2020
Cited by 5 | Viewed by 2859
Abstract
Recent experimental advancements have enabled the creation of tunable localized electrostatic potentials in graphene/hexagonal boron nitride (hBN) heterostructures without concealing the graphene surface. These potentials corral graphene electrons yielding systems akin to electrostatically defined quantum dots (QDs). The spectroscopic characterization of these exposed [...] Read more.
Recent experimental advancements have enabled the creation of tunable localized electrostatic potentials in graphene/hexagonal boron nitride (hBN) heterostructures without concealing the graphene surface. These potentials corral graphene electrons yielding systems akin to electrostatically defined quantum dots (QDs). The spectroscopic characterization of these exposed QDs with the scanning tunneling microscope (STM) revealed intriguing resonances that are consistent with a tunneling probability of 100% across the QD walls. This effect, known as Klein tunneling, is emblematic of relativistic particles, underscoring the uniqueness of these graphene QDs. Despite the advancements with electrostatically defined graphene QDs, a complete understanding of their spectroscopic features still remains elusive. In this study, we address this lapse in knowledge by comprehensively considering the electrostatic environment of exposed graphene QDs. We then implement these considerations into tight binding calculations to enable simulations of the graphene QD local density of states. We find that the inclusion of the STM tip’s electrostatics in conjunction with that of the underlying hBN charges reproduces all of the experimentally resolved spectroscopic features. Our work provides an effective approach for modeling the electrostatics of exposed graphene QDs. The methods discussed here can be applied to other electrostatically defined QD systems that are also exposed. Full article
(This article belongs to the Special Issue Nanoscale Electrical Characterization of Low Dimensional Materials for Electronics)
►▼ Show Figures

Figure 1

15 pages, 4612 KiB  
Article
Dynamic Modification of Fermi Energy in Single-Layer Graphene by Photoinduced Electron Transfer from Carbon Dots
by Angelo Armano, Gianpiero Buscarino, Fabrizio Messina, Alice Sciortino, Marco Cannas, Franco Mario Gelardi, Filippo Giannazzo, Emanuela Schilirò and Simonpietro Agnello
Nanomaterials 2020, 10(3), 528; https://doi.org/10.3390/nano10030528 - 15 Mar 2020
Cited by 8 | Viewed by 3512
Abstract
Graphene (Gr)—a single layer of two-dimensional sp2 carbon atoms—and Carbon Dots (CDs)—a novel class of carbon nanoparticles—are two outstanding nanomaterials, renowned for their peculiar properties: Gr for its excellent charge-transport, and CDs for their impressive emission properties. Such features, coupled with a [...] Read more.
Graphene (Gr)—a single layer of two-dimensional sp2 carbon atoms—and Carbon Dots (CDs)—a novel class of carbon nanoparticles—are two outstanding nanomaterials, renowned for their peculiar properties: Gr for its excellent charge-transport, and CDs for their impressive emission properties. Such features, coupled with a strong sensitivity to the environment, originate the interest in bringing together these two nanomaterials in order to combine their complementary properties. In this work, the investigation of a solid-phase composite of CDs deposited on Gr is reported. The CD emission efficiency is reduced by the contact of Gr. At the same time, the Raman analysis of Gr demonstrates the increase of Fermi energy when it is in contact with CDs under certain conditions. The interaction between CDs and Gr is modeled in terms of an electron-transfer from photoexcited CDs to Gr, wherein an electron is first transferred from the carbon core to the surface states of CDs, and from there to Gr. There, the accumulated electrons determine a dynamical n-doping effect modulated by photoexcitation. The CD–graphene interaction unveiled herein is a step forward in the understanding of the mutual influence between carbon-based nanomaterials, with potential prospects in light conversion applications. Full article
(This article belongs to the Special Issue Nanoscale Electrical Characterization of Low Dimensional Materials for Electronics)
►▼ Show Figures

Graphical abstract

11 pages, 1941 KiB  
Article
Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire
by Peng Zhao, Yu Zhang, Shuai Tang, Runze Zhan, Juncong She, Jun Chen, Ningsheng Xu and Shaozhi Deng
Nanomaterials 2019, 9(7), 981; https://doi.org/10.3390/nano9070981 - 06 Jul 2019
Cited by 10 | Viewed by 2895
Abstract
The excellent properties of silicon carbide (SiC) make it widely applied in high-voltage, high-power, and high-temperature electronic devices. SiC nanowires combine the excellent physical properties of SiC material and the advantages of nanoscale structures, thus attracting significant attention from researchers. Herein, the electron [...] Read more.
The excellent properties of silicon carbide (SiC) make it widely applied in high-voltage, high-power, and high-temperature electronic devices. SiC nanowires combine the excellent physical properties of SiC material and the advantages of nanoscale structures, thus attracting significant attention from researchers. Herein, the electron vacuum tunneling emission characteristics of an individual SiC nanowire affected by the piezoresistive effect are investigated using in situ electric measurement in a scanning electron microscope (SEM) chamber. The results demonstrate that the piezoresistive effect caused by the electrostatic force has a significant impact on the electronic transport properties of the nanowire, and the excellent electron emission characteristics can be achieved in the pulse voltage driving mode, including lower turn-on voltage and higher maximum current. Furthermore, a physical model about the piezoresistive effect of SiC nanowire is proposed to explain the transformation of electronic transport under the action of electrostatic force in DC voltage and pulsed voltage driving modes. The findings can provide a way to obtain excellent electron emission characteristics from SiC nanowires. Full article
(This article belongs to the Special Issue Nanoscale Electrical Characterization of Low Dimensional Materials for Electronics)
►▼ Show Figures

Graphical abstract

9 pages, 1523 KiB  
Article
Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect Transistors
by Yonatan Vaknin, Ronen Dagan and Yossi Rosenwaks
Nanomaterials 2019, 9(6), 882; https://doi.org/10.3390/nano9060882 - 14 Jun 2019
Cited by 10 | Viewed by 4273
Abstract
The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS2), a transition metal dichalcogenides semiconductor, is considered an [...] Read more.
The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS2), a transition metal dichalcogenides semiconductor, is considered an auspicious candidate for the post-silicon era due to its outstanding chemical and thermal stability. We present a Kelvin probe force microscopy (KPFM) study of a MoS2 FET device, showing direct evidence for pinch-off formation in the channel by in situ monitoring of the electrostatic potential distribution along the conducting channel of the transistor. In addition, we present a systematic comparison between a monolayer MoS2 FET and a few-layer MoS2 FET regarding gating effects, electric field distribution, depletion region, and pinch-off formation in such devices. Full article
(This article belongs to the Special Issue Nanoscale Electrical Characterization of Low Dimensional Materials for Electronics)
►▼ Show Figures

Figure 1

12 pages, 11812 KiB  
Article
Probing the Optical Properties of MoS2 on SiO2/Si and Sapphire Substrates
by Tao Han, Hongxia Liu, Shulong Wang, Shupeng Chen, Wei Li, Xiaoli Yang, Ming Cai and Kun Yang
Nanomaterials 2019, 9(5), 740; https://doi.org/10.3390/nano9050740 - 14 May 2019
Cited by 26 | Viewed by 5570
Abstract
As an important supplementary material to graphene in the optoelectronics field, molybdenum disulfide (MoS2) has attracted attention from researchers due to its good light absorption capacity and adjustable bandgap. In this paper, MoS2 layers are respectively grown on SiO2 [...] Read more.
As an important supplementary material to graphene in the optoelectronics field, molybdenum disulfide (MoS2) has attracted attention from researchers due to its good light absorption capacity and adjustable bandgap. In this paper, MoS2 layers are respectively grown on SiO2/Si and sapphire substrates by atmospheric pressure chemical vapor deposition (APCVD). Atomic force microscopy, optical microscopy, and Raman and photoluminescence spectroscopy are used to probe the optical properties of MoS2 on SiO2/Si and sapphire substrates systematically. The peak shift between the characteristic A1g and E12g peaks increases, and the I peak of the PL spectrum on the SiO2/Si substrate redshifts slightly when the layer numbers were increased, which can help in obtaining the layer number and peak position of MoS2. Moreover, the difference from monolayer MoS2 on the SiO2/Si substrate is that the B peak of the PL spectrum has a blueshift of 56 meV and the characteristic E12g peak of the Raman spectrum has no blueshift. The 1- and 2-layer MoS2 on a sapphire substrate had a higher PL peak intensity than that of the SiO2/Si substrate. When the laser wavelength is transformed from 532 to 633 nm, the position of I exciton peak has a blueshift of 16 meV, and the PL intensity of monolayer MoS2 on the SiO2/Si substrate increases. The optical properties of MoS2 can be obtained, which is helpful for the fabrication of optoelectronic devices. Full article
(This article belongs to the Special Issue Nanoscale Electrical Characterization of Low Dimensional Materials for Electronics)
►▼ Show Figures

Figure 1

Review

Jump to: Research

21 pages, 5049 KiB  
Review
Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures
by Filippo Giannazzo, Emanuela Schilirò, Giuseppe Greco and Fabrizio Roccaforte
Nanomaterials 2020, 10(4), 803; https://doi.org/10.3390/nano10040803 - 22 Apr 2020
Cited by 34 | Viewed by 7761
Abstract
Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future electronic and optoelectronic applications. However, their electronic properties are strongly affected by peculiar nanoscale defects/inhomogeneities (point or complex defects, thickness fluctuations, grain boundaries, etc.), which are intrinsic of these materials or introduced during [...] Read more.
Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future electronic and optoelectronic applications. However, their electronic properties are strongly affected by peculiar nanoscale defects/inhomogeneities (point or complex defects, thickness fluctuations, grain boundaries, etc.), which are intrinsic of these materials or introduced during device fabrication processes. This paper reviews recent applications of conductive atomic force microscopy (C-AFM) to the investigation of nanoscale transport properties in TMDs, discussing the implications of the local phenomena in the overall behavior of TMD-based devices. Nanoscale resolution current spectroscopy and mapping by C-AFM provided information on the Schottky barrier uniformity and shed light on the mechanisms responsible for the Fermi level pinning commonly observed at metal/TMD interfaces. Methods for nanoscale tailoring of the Schottky barrier in MoS2 for the realization of ambipolar transistors are also illustrated. Experiments on local conductivity mapping in monolayer MoS2 grown by chemical vapor deposition (CVD) on SiO2 substrates are discussed, providing a direct evidence of the resistance associated to the grain boundaries (GBs) between MoS2 domains. Finally, C-AFM provided an insight into the current transport phenomena in TMD-based heterostructures, including lateral heterojunctions observed within MoxW1–xSe2 alloys, and vertical heterostructures made by van der Waals stacking of different TMDs (e.g., MoS2/WSe2) or by CVD growth of TMDs on bulk semiconductors. Full article
(This article belongs to the Special Issue Nanoscale Electrical Characterization of Low Dimensional Materials for Electronics)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-7
Back to TopTop