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Nanomaterials
Special Issues
2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics and Sensing
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Special Issue "2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics and Sensing"

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 30 June 2024 | Viewed by 1009

Special Issue Editors

Dr. Filippo Giannazzo

E-Mail Website
Guest Editor
Consiglio Nazionale delle Ricerche–Institute for Microelectronics and Microsystems (CNR-IMM), Strada VIII, I-95121 Catania, Italy
Interests: 2D materials (graphene, transition metal dichalcogenides); wide-bandgap semiconductors (SiC, GaN); high-power and high-frequency electronics; electrical atomic force microscopy (C-AFM, SCM, SSRM)
Special Issues, Collections and Topics in MDPI journals
Dr. Federica Bondino
E-Mail Website
Guest Editor
CNR-IOM, I-34149 Trieste, Italy
Interests: synthesis and characterization of low-dimensional materials (graphene, nanoribbons, nanographene, transition metal dichalcogenides); reactivity at interfaces and surfaces; on-surface processes; XPS
Dr. Luca Seravalli

E-Mail Website
Guest Editor
CNR-IMEM Institute, Parco delle Scienze 37a, I-43100 Parma, Italy
Interests: CVD growth of transition-metal dichalcogenides; MOVPE growth and characterization of wide-band semiconductor oxides (Ga2O3); MOVPE growth, characterization and modelling of semiconductor nanowires for application in sensing
Special Issues, Collections and Topics in MDPI journals
Dr. Simonpietro Agnello

E-Mail Website
Guest Editor
Dipartimento di Fisica e Chimica—Emilio Segrè, Università degli Studi di Palermo, Via Archirafi 36, 90123 Palermo, Italy
Interests: 2D materials; optical; Raman and electron paramagnetic resonance spectroscopy studies of advanced materials for optics, electronics and photonics; irradiation effects on matter
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

2D layered materials (including graphene, transition metal dichalcogenides and hexagonal boron nitride) and their van der Waals heterostructures have beeen the object of intensive investigations for their potential applications in electronics/optoelectronics, sensing, quantum and energy applications. In particular, the integration of 2D materials with bulk (3D) semiconductors, such as Si, Ge and wide-bandgap semiconductors (SiC, GaN), is currently being explored to combine their functional properties with mature microelectronics technology, thus allowing for the demonstration of advanced or radically new device concepts.

The present Special Issue aims to collect significant contributions on the scalable growth of 2D materials and on the fabrication approaches of 2D materials heterostructures. Advanced characterization methods (optical, vibrational, chemical, electrical) and theoretical modelling of these heterostructures will be in the scope of this collection. Furthermore, we will host papers addressing the challenges involved in 2D material integration and device fabrication, as well as those that demonstrate novel applications in electronics/optoelectronics and sensing.

It is our pleasure to invite you to submit a manuscript for this Special Issue. Full papers, short communications and reviews are welcome.

Dr. Filippo Giannazzo
Dr. Federica Bondino
Dr. Luca Seravalli
Dr. Simonpietro Agnello
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2D materials such as graphene, transition metal dichalcogenides, h-BN, Xenes (silicene, stanene, phosphorene, etc.), MXenes
  • Van der Waals heterostructures
  • large area growth methods of 2D materials (CVD, MOCVD, MBE, PLD, ALD)
  • advanced characterizations of 2D materials and heterostructures (AFM, TEM, Raman, optical and photoelectron spectroscopy)
  • theoretical modelling
  • electronic/optoelectronics applications (digital, RF, photodetectors, flexible/wearable electronics)
  • sensors (environmental, chemical, biomedical applications)
  • quantum technologies
  • energy technologies (light harvesting, thermoelectrics, batteries/supercapacitors, hydrogen evolution reaction)

Published Papers (2 papers)

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Research

9 pages, 3493 KiB  
Communication
Symmetry-Engineering-Induced In-Plane Polarization Enhancement in Ta2NiS5/CrOCl van der Waals Heterostructure
by
Yue Su
,
Peng Chen
,
Xiangrui Xu
,
Yufeng Zhang
,
Weiwei Cai
,
Gang Peng
,
Xueao Zhang
and
Chuyun Deng
Nanomaterials 2023, 13(23), 3050; https://doi.org/10.3390/nano13233050 - 29 Nov 2023
Viewed by 278
Abstract
Van der Waals (vdW) interfaces can be formed via layer stacking regardless of the lattice constant or symmetry of the individual building blocks. Herein, we constructed a vdW interface of layered Ta2NiS5 and CrOCl, which exhibited remarkably enhanced in-plane anisotropy [...] Read more.
Van der Waals (vdW) interfaces can be formed via layer stacking regardless of the lattice constant or symmetry of the individual building blocks. Herein, we constructed a vdW interface of layered Ta2NiS5 and CrOCl, which exhibited remarkably enhanced in-plane anisotropy via polarized Raman spectroscopy and electrical transport measurements. Compared with pristine Ta2NiS5, the anisotropy ratio of the Raman intensities for the B2g, 2Ag, and 3Ag modes increased in the heterostructure. More importantly, the anisotropy ratios of conductivity and mobility in the heterostructure increased by one order of magnitude. Specifically speaking, the conductivity ratio changed from ~2.1 (Ta2NiS5) to ~15 (Ta2NiS5/CrOCl), while the mobility ratio changed from ~2.7 (Ta2NiS5) to ~32 (Ta2NiS5/CrOCl). Such prominent enhancement may be attributed to the symmetry reduction caused by lattice mismatch at the heterostructure interface and the introduction of strain into the Ta2NiS5. Our research provides a new perspective for enhancing artificial anisotropy physics and offers feasible guidance for future functionalized electronic devices. Full article
(This article belongs to the Special Issue 2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics and Sensing)
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13 pages, 6187 KiB  
Article
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition
by
Marianna Španková
,
Štefan Chromik
,
Edmund Dobročka
,
Lenka Pribusová Slušná
,
Marcel Talacko
,
Maroš Gregor
,
Béla Pécz
,
Antal Koos
,
Giuseppe Greco
,
Salvatore Ethan Panasci
,
Patrick Fiorenza
,
Fabrizio Roccaforte
,
Yvon Cordier
,
Eric Frayssinet
and
Filippo Giannazzo
Nanomaterials 2023, 13(21), 2837; https://doi.org/10.3390/nano13212837 - 26 Oct 2023
Viewed by 553
Abstract
In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical characterization of the films were performed using [...] Read more.
In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical characterization of the films were performed using Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction measurements, and high-resolution transmission electron microscopy. According to X-ray diffraction studies, the films exhibit epitaxial growth, indicating a good in-plane alignment. Furthermore, the films demonstrate uniform thickness on large areas, as confirmed by Raman spectroscopy. The lateral electrical current transport of the MoS2 grown on sapphire was investigated by temperature (T)-dependent sheet resistance and Hall effect measurements, showing a high n-type doping of the semiconducting films (ns from ~1 × 1013 to ~3.4 × 1013 cm−2 from T = 300 K to 500 K), with a donor ionization energy of Ei = 93 ± 8 meV and a mobility decreasing with T. Finally, the vertical current injection across the MoS2/GaN heterojunction was investigated by means of conductive atomic force microscopy, showing the rectifying behavior of the I-V characteristics with a Schottky barrier height of ϕB ≈ 0.36 eV. The obtained results pave the way for the scalable application of PLD-grown MoS2 on GaN in electronics/optoelectronics. Full article
(This article belongs to the Special Issue 2D Layered Nanomaterials and Heterostructures for Electronics, Optoelectronics and Sensing)
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