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Advances in Ferroelectric Materials and Devices

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (10 September 2023) | Viewed by 1610

Special Issue Editors


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Guest Editor
School of Optoelectronical Engineering, Xi’an Technological University, Xi’an 710021, China
Interests: ferroelectric; piezoelectric; thin films; crystal growth; ultrasonic transducers; SAW device; sensors
Media Lab, Massachusetts Institute of Technology (MIT), Cambridge, MA 02139, USA
Interests: piezoelectric composites for sensors and transducers; dielectric composites for energy storage; conducting composites for multifunctional applications; flexible/stretchable electronics
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Special Issue Information

Dear Colleagues,

The ferroelectric phenomenon was discovered in Rochelle salt in 1921 by J. Valasek, who demonstrated that ‘permanent polarization is the natural state’ and published the first hysteresis loop of a ferroelectric material. The story of the discovery of ferroelectricity in barium titanate (BaTiO3) ceramic materials is fascinating, and started in the early 1940s under the shadow of World War II. In the mid-1940s, near the end of the war, publications began to appear in the open literature, advancing a significant number of industrial and commercial applications that can be directly credited to this most unusual phenomenon. In the 1950s, the lead zirconate titanate ceramic (Pb(Zr1-xTix)O3, PZT) was discovered and became the heart of the widest range of piezoelectric applications, such as ultrasonic transducers, medical diagnostic transducers, gas ignitors, ultrasonic motors, thin-film capacitors, and ferroelectric memories, in multiple industrial sectors, including automotive, aerospace, consumer electronics, medical imaging, and information technology.

Currently, special attention is being paid to enhancing ferroelectric properties by structural modifications performed using special methods, such as domain engineering, rare earth doping, manipulations at the nanoscale, improvement of compositions, ceramic texture, etc.

We invite researchers to submit original research or review papers that discuss the recent developments in ferroelectric materials.

This Special Issue is open to the characterization of ferroelectric ceramics for the development of applications. The wide range of topics selected for this Special Issue includes, but is not limited to: relaxor-PT ferroelectric ceramics, lead-free ferroelectrics, organic ferroelectrics, ferroelectric material design, 2D ferroelectric, emerging ferroelectric applications, ferroelectric transistors, pyroelectric detectors, SAW devices, MEMS sensors.

Prof. Dr. Dabin Lin 
Dr. Lin Zhang
Guest Editors

Manuscript Submission Information

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Keywords

  • Relaxor-PT ferroelectric ceramics
  • lead-free ferroelectrics
  • organic ferroelectrics
  • ferroelectric material design
  • emerging ferroelectric applications
  • pyroelectric detectors
  • SAW device

Published Papers (1 paper)

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Research

13 pages, 10334 KiB  
Article
Effects of Oxygen Flow during Fabrication by Magnetron Sputtering on Structure and Performance of Zr-Doped HfO2 Thin Films
by Yingxue Xi, Lei Liu, Jiwu Zhao, Xinhui Qin, Jin Zhang, Changming Zhang and Weiguo Liu
Materials 2023, 16(16), 5559; https://doi.org/10.3390/ma16165559 - 10 Aug 2023
Cited by 1 | Viewed by 1118
Abstract
Oxygen defects in Hafnium Oxide (HfO2)-based ferroelectric thin films not only are related to the cause of ferroelectricity but also affect the ferroelectric properties of the thin films. This paper, therefore, focuses on the fabrication of Zr:HfO2 thin films by [...] Read more.
Oxygen defects in Hafnium Oxide (HfO2)-based ferroelectric thin films not only are related to the cause of ferroelectricity but also affect the ferroelectric properties of the thin films. This paper, therefore, focuses on the fabrication of Zr:HfO2 thin films by RF (Radio Frequency) magnetron sputtering with Zr-doped HfO2 as the target and examines how oxygen flow impacts the oxygen vacancies and electrical properties thereof. Additionally, TiN thin-film electrodes were prepared by direct current (DC) magnetron reactive sputtering using nitrogen as the reaction gas, the influences of the substrate temperature on the film deposition rate and crystal phase structure were investigated, and the resultant thin-film electrodes with the lowest resistivity were obtained. Furthermore, the ferroelectric hysteresis loop and leakage current density of metal–insulator–metal (MIM) ferroelectric capacitors formed by annealing the 30 nm thick deposited Zr:HfO2 sandwiched between the top and bottom TiN electrodes were measured. The results demonstrate that varying oxygen flow has a considerable effect on oxygen vacancies and the Zr doping concentration of deposited Zr:HfO2 ferroelectric thin films. When the oxygen flow is set to 40 sccm (standard cubic centimeters per minute) and an external electric field strength of 2 mV/cm is applied, the remnant polarization reaches 18 μC/cm2, with a decrease in the leakage current density of 105–6 orders of magnitude. Full article
(This article belongs to the Special Issue Advances in Ferroelectric Materials and Devices)
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