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Thin-Film Transistors: Devices for the Next Generation Large Area Electronics

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: closed (20 August 2023) | Viewed by 1686

Special Issue Editor


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Guest Editor
Department of Information Display, Kyung Hee University, Seoul, Republic of Korea
Interests: thin film transistors; high-k dielectrics; solution process; oxide materials
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Dear Colleagues,

For more than 40 years, thin-film transistors (TFTs) have come a long way from potential electronic devices to being used in our smart phones. TFTs are the mirror of technology improvement with the research and development on materials, processes, and devices.

From a material prospect, the semiconductor has been the main focus. amorphous and polycrystalline materials have been investigated: from amorphous silicon, polysilicon, to organic materials, oxide semiconductors, CNTs, and the recent development of perovskite and 2D materials. For the dielectric, SiO2 has been the main choice, but high-k dielectrics have been included. Ferroelectric dielectrics have also opened the way to other advanced applications. Materials used as the substrate have also changed with time, as nowadays, flexible or even stretchable substrates are commonly investigated. In terms of process, vacuum processes like sputtering and plasma enhanced chemical vapor deposition (PECVD) have been mostly used for practical industrial applications. Nonetheless, non-vacuum processes including but not limited to inkjet printing, spin-coating, spray coating, roll-to-roll have lead to the possibility of devices with reproducible and high mobility characteristics. Considering devices, the conventional TFT structures (staggered, inverted staggered, coplanar, inverted coplanar) and other structures (like the Corbino TFT, dual gate...) have been widely investigated to obtain devices with higher stability and higher mobility. More recently, hybrid solutions have been investigated for CMOS applications, like the LTPO inverters. Finally, let us not forget the development of technology computer aided design (TCAD) to better understand and strategise the development of circuits for large are electronics like active matrix organic light emitting diodes (AMOLED). Last but not least, TFTs can also be used in bioelectronics, or even biomimicing (e.g., synaptic) devices.

In this paper, we invite you to submit a manuscript relevant to the possibilities of the most recent and newest approaches of TFT materials, processes, and devices which could reflect tomorrow’s applications and set the first footsteps to new possibilities. Full papers, communications, and reviews are welcome.

Prof. Dr. Christophe Avis
Guest Editor

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Keywords

  • thin-film transistor
  • vacuum process
  • solution process
  • flexible and stretchable substrates
  • oxide semiconductors
  • 2D materials
  • perovskite
  • organic semiconductors
  • LTPO
  • bioelectronics

Published Papers (1 paper)

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Research

14 pages, 6716 KiB  
Article
Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors
by Changyong Oh, Taehyeon Kim, Myeong Woo Ju, Min Young Kim, So Hee Park, Geon Hyeong Lee, Hyunwuk Kim, SeHoon Kim and Bo Sung Kim
Materials 2023, 16(18), 6161; https://doi.org/10.3390/ma16186161 - 11 Sep 2023
Viewed by 1313
Abstract
The effect of the channel interface of top-gate InGaZnO (IGZO) thin film transistors (TFTs) on the electrical properties caused by exposure to various wet chemicals such as deionized water, photoresist (PR), and strippers during the photolithography process was studied. Contrary to the good [...] Read more.
The effect of the channel interface of top-gate InGaZnO (IGZO) thin film transistors (TFTs) on the electrical properties caused by exposure to various wet chemicals such as deionized water, photoresist (PR), and strippers during the photolithography process was studied. Contrary to the good electrical characteristics of TFTs including a protective layer (PL) to avoid interface damage by wet chemical processes, TFTs without PL showed a conductive behavior with a negative threshold voltage shift, in which the ratio of Ga and Zn on the IGZO top surface reduced due to exposure to a stripper. In addition, the wet process in photolithography increased oxygen vacancy and oxygen impurity on the IGZO surface. The photo-patterning process increased donor-like defects in IGZO due to organic contamination on the IGZO surface by PR, making the TFT characteristics more conductive. The introduction of ozone (O3) annealing after photo-patterning and stripping of IGZO reduced the increased defect states on the surface of IGZO due to the wet process and effectively eliminated organic contamination by PR. In particular, by controlling surface oxygens on top of the IGZO surface excessively generated with O3 annealing using UV irradiation of 185 and 254 nm, IGZO TFTs with excellent current–voltage characteristics and reliability could be realized comparable to IGZO TFTs containing PL. Full article
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