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Semiconductor Quantum Wells and Superlattices

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A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (20 August 2022) | Viewed by 10567

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Special Issue Editor

Dr. Marcin Motyka

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Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
Interests: semiconductor quantum wells and superlattices; mid-infrared lasers and detection systems; modulating spectroscopy; infrared fourier spectroscopy

Special Issue Information

Dear colleagues,

Semiconductor quantum wells (QWs) and their multilayer counterparts, so-called superlattices (SLs), are crucial cores of many optoelectronic devices, such as light emitters as well as advanced detections systems and solar cells. At present, they are being used as active parts of many devices intended for emission, detection, and light conversion in a broad spectral range of electromagnetic fields. Such low-dimensional systems have been successfully used in so-called blue electronics based on wide-gap semiconductors such as GaN or ZnO, and on the other side of the electromagnetic spectrum, in the infrared range from micrometer to millimeter waves (terahertz frequencies) utilizing narrow gap semiconductors, type II band lineup systems, and inter- and intraband transitions in cascaded schemes. Laser and photodetector applications based on narrow gap semiconductors, their broken gap combinations such as InAs, InSb, and GaSb using quantum cascade lasers, interband cascade lasers, type II superlattices detectors, and many others, require challenging growth procedures, combined with spectroscopic characterization techniques, and working together in a tight feedback loop in order to continuously collect information and later make the necessary modifications and optimizations in designs and epitaxial procedures, aiming finally at improved device performances. Therefore, this Special Issue of the Materials journal will be focused on the following subjects:

Propositions of novel types of QWs and SLs systems;
Development and improvements in growth techniques of low dimensional multilayer structures;
Advances in spectroscopic measurements;
Development of new schemes of QW- or SL-based active parts of optoelectronic devices for light emission, detection or conversion;
Improvements of the working characteristics of optoelectronic devices based on low-dimensional structures in the context of their applications in different industrial branches.

It is my pleasure to invite you to submit a manuscript for this Special Issue. Full papers, short communications, and reviews addressing the abovementioned areas are all welcome.

Dr. Marcin Motyka
Guest Editor

Manuscript Submission Information

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Keywords

quantum wells
semiconductor superlattices
quantum cascade systems
semiconductor lasers and detectors
energy converters and solar cells
optical spectroscopy
mid-infrared and terahertz range applications
new qw systems for green, blue, white, and multicolor emitters
epitaxial growth techniques
optical and structural properties

Published Papers (6 papers)

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Research

18 pages, 7194 KiB

Open AccessArticle

Optimisation of QCL Structures Modelling by Polynomial Approximation

by Stanisław Pawłowski and Mariusz Mączka

Materials 2022, 15(16), 5715; https://doi.org/10.3390/ma15165715 - 19 Aug 2022

Cited by 2 | Viewed by 1467

Abstract

Modelling of quantum cascade laser (QCL) structures, despite a regular progress in the field, still remains a complex task in both analytical and numerical aspects. Computer simulations of such nanodevices require large operating memories and effective algorithms to be applied. Promisingly, by applying semi-analytical polynomial approximation method to computing potential, wave functions and electron charge distribution, accurate results and quick convergence of the self-consistent solution for the Schrödinger and Poisson equations are reachable. Additionally, such an approach makes the respective numerical models competitively effective. For contemporary QCL structures, with quantum wells quite typically forming complex systems, a special approach to determining self energies and coefficients of approximating polynomials is required. Under this paper we have analysed whether the polynomial approximation method can be successfully applied to solving the Schrödinger equation in QCL. A new algorithm for determining self energies has been proposed and a new method has been optimised for the researched structures. The developed solutions have been implemented as a new module for the finite model of the superlattice (FMSL) and tested on the QCL emitting light in the mid-infrared range. Full article

(This article belongs to the Special Issue Semiconductor Quantum Wells and Superlattices)

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11 pages, 2459 KiB

Open AccessArticle

Photoluminescence Spectroscopy of the InAsSb-Based p-i-n Heterostructure

by Tristan Smołka, Marcin Motyka, Vyacheslav Vital’evich Romanov and Konstantin Dmitrievich Moiseev

Materials 2022, 15(4), 1419; https://doi.org/10.3390/ma15041419 - 14 Feb 2022

Cited by 5 | Viewed by 1396

Abstract

Photoluminescence in a double heterostructure based on a ternary InAsSb solid solution was observed in the mid-infrared range of 2.5–4 μm. A range of compositions of the InAs_1−ySb_y ternary solid solution has been established, where the energy resonance between the band gap and the splitting-off band in the valence band of the semiconductor can be achieved. Due to the impact of nonradiative Auger recombination processes, different temperature dependence of photoluminescence intensity was found for the barrier layer and the narrow-gap active region, respectively. It was shown that efficient high-temperature photoluminescence can be achieved by suppressing the nonradiative Auger recombination (CHHS) process. Increased temperature, for which the energy gap is lower than the split-off band energy, leads to violation of the resonance condition in narrow gap antimonide compounds, which explains the observed phenomenon. This finding might influence future application of the investigated material systems in mid-infrared emitters used for, e.g., optical gas sensing. Full article

(This article belongs to the Special Issue Semiconductor Quantum Wells and Superlattices)

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10 pages, 2312 KiB

Open AccessArticle

Towards Interband Cascade lasers on InP Substrate

by Krzysztof Ryczko, Janusz Andrzejewski and Grzegorz Sęk

Materials 2022, 15(1), 60; https://doi.org/10.3390/ma15010060 - 22 Dec 2021

Cited by 1 | Viewed by 2070

Abstract

In this study, we propose designs of an interband cascade laser (ICL) active region able to emit in the application-relevant mid infrared (MIR) spectral range and to be grown on an InP substrate. This is a long-sought solution as it promises a combination of ICL advantages with mature and cost-effective epitaxial technology of fabricating materials and devices with high structural and optical quality, when compared to standard approaches of growing ICLs on GaSb or InAs substrates. Therefore, we theoretically investigate a family of type II, “W”-shaped quantum wells made of InGaAs/InAs/GaAsSb with different barriers, for a range of compositions assuring the strain levels acceptable from the growth point of view. The calculated band structure within the 8-band k·p approximation showed that the inclusion of a thin InAs layer into such a type II system brings a useful additional tuning knob to tailor the electronic confined states, optical transitions’ energy and their intensity. Eventually, it allows achieving the emission wavelengths from below 3 to at least 4.6 μm, while still keeping reasonably high gain when compared to the state-of-the-art ICLs. We demonstrate a good tunability of both the emission wavelength and the optical transitions’ oscillator strength, which are competitive with other approaches in the MIR. This is an original solution which has not been demonstrated so far experimentally. Such InP-based interband cascade lasers are of crucial application importance, particularly for the optical gas sensing. Full article

(This article belongs to the Special Issue Semiconductor Quantum Wells and Superlattices)

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13 pages, 17081 KiB

Open AccessArticle

Optical Measurements and Theoretical Modelling of Excitons in Double ZnO/ZnMgO Quantum Wells in an Internal Electric Field

by Janusz Andrzejewski, Mieczyslaw Antoni Pietrzyk, Dawid Jarosz and Adrian Kozanecki

Materials 2021, 14(23), 7222; https://doi.org/10.3390/ma14237222 - 26 Nov 2021

Cited by 2 | Viewed by 1323

Abstract

In this paper, the photoluminescence spectra of excitons in ZnO/ZnMgO/ZnO double asymmetric quantum wells grown on a–plane

{Al}_{2} O_{3}

substrates with internal electric-field bands structures were studied. In these structures, the electron and the hole in the exciton are spatially separated [...] Read more.

In this paper, the photoluminescence spectra of excitons in ZnO/ZnMgO/ZnO double asymmetric quantum wells grown on a–plane

{Al}_{2} O_{3}

substrates with internal electric-field bands structures were studied. In these structures, the electron and the hole in the exciton are spatially separated between neighbouring quantum wells, by a ZnMgO barrier with different thickness. The existence of an internal electric field generates a linear potential and, as a result, lowers the energy of quantum states in the well. For the wide wells, the electrons are spatially separated from the holes and can create indirect exciton. To help the understanding of the photoluminescence spectra, for single particle states the 8 k·p for wurtzite structure is employed. Using these states, the exciton in the self-consistent model with 2D hydrogenic 1s–like wave function is calculated. Full article

(This article belongs to the Special Issue Semiconductor Quantum Wells and Superlattices)

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13 pages, 3951 KiB

Open AccessArticle

A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping

by Iwona Sankowska, Agata Jasik, Krzysztof Czuba, Jacek Ratajczak, Paweł Kozłowski and Marek Wzorek

Materials 2021, 14(17), 4940; https://doi.org/10.3390/ma14174940 - 30 Aug 2021

Cited by 3 | Viewed by 1875

Abstract

In this paper, the study of defects in InAs/GaSb type-II superlattices using high-resolution an x-ray diffraction method as well as scanning (SEM) and transmission (TEM) electron microscopy is presented. The investigated superlattices had 200 (#SL200), 300 (#SL300), and 400 (#SL400) periods and were grown using molecular beam epitaxy. The growth conditions differed only in growth temperature, which was 370 °C for #SL400 and #SL200, and 390 °C for #SL300. A wings-like diffuse scattering was observed in reciprocal space maps of symmetrical (004) GaSb reflection. The micrometer-sized defect conglomerates comprised of stacking faults, and linear dislocations were revealed by the analysis of diffuse scattering intensity in combination with SEM and TEM imaging. The following defect-related parameters were obtained: (1) integrated diffuse scattering intensity of 0.1480 for #SL400, 0.1208 for #SL300, and 0.0882 for #SL200; (2) defect size: (2.5–3) μm × (2.5–3) μm –#SL400 and #SL200, (3.2–3.4) μm × (3.7–3.9) μm –#SL300; (3) defect diameter: ~1.84 μm –#SL400, ~2.45 μm –#SL300 and ~2.01 μm –#SL200; (4) defect density: 1.42 × 10⁶ cm⁻² –#SL400, 1.01 × 10⁶ cm⁻² –#SL300, 0.51 × 10⁶ cm⁻² –#SL200; (5) diameter of stacking faults: 0.14 μm and 0.13 μm for #SL400 and #SL200, 0.30 μm for #SL300. Full article

(This article belongs to the Special Issue Semiconductor Quantum Wells and Superlattices)

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10 pages, 2480 KiB

Open AccessArticle

Interband Cascade Active Region with Ultra-Broad Gain in the Mid-Infrared Range

by Krzysztof Ryczko, Agata Zielińska and Grzegorz Sęk

Materials 2021, 14(5), 1112; https://doi.org/10.3390/ma14051112 - 27 Feb 2021

Cited by 5 | Viewed by 1372

Abstract

The optical gain spectrum has been investigated theoretically for various designs of active region based on InAs/GaInSb quantum wells—i.e., a type II material system employable in interband cascade lasers (ICLs) or optical amplifiers operating in the mid-infrared spectral range. The electronic properties and optical responses have been calculated using the eight-band k·p theory, including strain and external electric fields, to simulate the realistic conditions occurring in operational devices. The results show that intentionally introducing a slight nonuniformity between two subsequent stages of a cascaded device via the properly engineered modification of the type II quantum wells of the active area offers the possibility to significantly broaden the gain function. A −3 dB gain width of 1 µm can be reached in the 3–5 µm range, which is almost an order of magnitude larger than that of any previously reported ICLs. This is a property strongly demanded in many gas-sensing or free-space communication applications, and it opens a way for a new generation of devices in the mid-infrared range, such as broadly tunable single-mode lasers, mode-locked lasers for laser-based spectrometers, and optical amplifiers or superluminescent diodes which do not exist beyond 3 µm yet. Full article

(This article belongs to the Special Issue Semiconductor Quantum Wells and Superlattices)

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