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Materials for Nano/Microelectronic Packaging Applications

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (28 February 2018) | Viewed by 18942

Special Issue Editor


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Guest Editor
Mechanical and Mechatronics Engineering Department, University of Waterloo, Waterloo, ON N2L 3G1, Canada
Interests: nano and micro-electro-mechanical systems (N/MEMS) devices; sensors; harvesters and actuators; quantum electronic solids; nano/micro-joining; nano-plasmonic
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Special Issue Information

Dear Colleagues,

Nano and Micro-Electro-Mechanical Systems (N/MEMS) devices applies to all types of miniaturized devices that are fabricated from silicon- and polymer-based materials using techniques derived from the nano/microelectronics industry. These techniques include isotropic and anisotropic etching, various thin film deposition methods, bonding, masking, and doping techniques employed in integrated circuit (IC) manufacturing.

Integration, packaging and full system feedback of N/MEMS devices are current bottlenecks. For example, the detailed function of a N/MEMS chip is critical to the design of the package, and cost effective packaging and robust reliability are two critical factors for successful commercialization of a N/MEMS device.

This Special Issue aims to introduce contemporary and new generation materials for “Nano/Microelectronic Packaging Applications. Topics include, but are not limited, to:

-Quantum electronic materials as interconnectors in nano/microelectronic industry
-2D (two-dimensional) and transition metal dichalcogenides (TMD) for electronic packaging
-Testing methods and reliability of electronic packaging materials
-Electronic interconnection in biological systems devices (e.g.) biosensors
-Materials for optoelectronic and electro-magnetic devices packaging
-Materials for high-density electronic packaging and interconnection
-Structure–property relations of materials in electronic packing and interconnections
-New materials for electronic packaging
-Computational studies for selecting materials for electronic packing

Prof. Mustafa Yavuz
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Quantum electronic solids
  • Electronic packaging materials
  • Integration, packaging and full system feedback of N/MEMS devices
  • Optoelectronic and electro-magnetic packaging
  • High-density electronic packaging and interconnection
  • Structure–property relations of materials in electronic packing
  • Testing methods and reliability of electronic packaging materials
  • 2D and TMD materials for electronic packaging
  • Nano- and Micro-joining

Published Papers (2 papers)

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Research

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11 pages, 2916 KiB  
Article
Reliability Criteria for Thick Bonding Wire
by Turker Dagdelen, Eihab Abdel-Rahman and Mustafa Yavuz
Materials 2018, 11(4), 618; https://doi.org/10.3390/ma11040618 - 17 Apr 2018
Cited by 9 | Viewed by 6463
Abstract
Bonding wire is one of the main interconnection techniques. Thick bonding wire is widely used in power modules and other high power applications. This study examined the case for extending the use of traditional thin wire reliability criteria, namely wire flexure and aspect [...] Read more.
Bonding wire is one of the main interconnection techniques. Thick bonding wire is widely used in power modules and other high power applications. This study examined the case for extending the use of traditional thin wire reliability criteria, namely wire flexure and aspect ratio, to thick wires. Eleven aluminum (Al) and aluminum coated copper (CucorAl) wire samples with diameter 300 μm were tested experimentally. The wire response was measured using a novel non-contact method. High fidelity FEM models of the wire were developed and validated. We found that wire flexure is not correlated to its stress state or fatigue life. On the other hand, aspect ratio is a consistent criterion of thick wire fatigue life. Increasing the wire aspect ratio lowers its critical stress and increases its fatigue life. Moreover, we found that CucorAl wire has superior performance and longer fatigue life than Al wire. Full article
(This article belongs to the Special Issue Materials for Nano/Microelectronic Packaging Applications)
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Review

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9378 KiB  
Review
The Property, Preparation and Application of Topological Insulators: A Review
by Wenchao Tian, Wenbo Yu, Jing Shi and Yongkun Wang
Materials 2017, 10(7), 814; https://doi.org/10.3390/ma10070814 - 17 Jul 2017
Cited by 126 | Viewed by 11620
Abstract
Topological insulator (TI), a promising quantum and semiconductor material, has gapless surface state and narrow bulk band gap. Firstly, the properties, classifications and compounds of TI are introduced. Secondly, the preparation and doping of TI are assessed. Some results are listed. (1) Although [...] Read more.
Topological insulator (TI), a promising quantum and semiconductor material, has gapless surface state and narrow bulk band gap. Firstly, the properties, classifications and compounds of TI are introduced. Secondly, the preparation and doping of TI are assessed. Some results are listed. (1) Although various preparation methods are used to improve the crystal quality of the TI, it cannot reach the industrialization. Fermi level regulation still faces challenges; (2) The carrier type and lattice of TI are affected by non-magnetic impurities. The most promising property is the superconductivity at low temperature; (3) Magnetic impurities can destroy the time-reversal symmetry of the TI surface, which opens the band gap on the TI surface resulting in some novel physical effects such as quantum anomalous Hall effect (QAHE). Thirdly, this paper summarizes various applications of TI including photodetector, magnetic device, field-effect transistor (FET), laser, and so on. Furthermore, many of their parameters are compared based on TI and some common materials. It is found that TI-based devices exhibit excellent performance, but some parameters such as signal to noise ratio (S/N) are still lower than other materials. Finally, its advantages, challenges and future prospects are discussed. Overall, this paper provides an opportunity to improve crystal quality, doping regulation and application of TI. Full article
(This article belongs to the Special Issue Materials for Nano/Microelectronic Packaging Applications)
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