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Advances in Metal Oxide Semiconductor Thin Films and Devices

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: closed (20 October 2023) | Viewed by 1122

Special Issue Editor


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Guest Editor
Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology (CHARUSAT), Changa 388421, Gujarat, India
Interests: fabrication, treatment, and testing of materials and structures; semiconductor structures; thin films

Special Issue Information

Dear Colleagues,

Thin films and devices composed of metal oxide semiconductors are currently experiencing a disruptive change towards becoming lighter, softer, and more flexible. Thin film devices include wearable and textile integrated systems. In order to enable all these uses, the latest advancements in thin film technologies must involve their change to become flexible, lightweight, transparent, conformable, stretchable, and even biocompatible and biodegradable. Since flexible thin film transistors (TFTs) can meet each of these requirements, they are becoming increasingly important for creating platforms for the next generation of electronic devices. Modern flexible TFT technologies are particularly well suited to metal oxide semiconductors because of their great optical transparency and strong electrical performance. For the upcoming flexible energy-harvesting devices, self-powered systems that include displays, sensors, data-storage units, and information processing capabilities, any new developments in thin film devices based on metal oxide semiconductors are essential.

Dr. C.K. Sumesh
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

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Keywords

  • metal oxide semiconductor
  • thin films
  • devices
  • wearable
  • textile integrated systems

Published Papers (1 paper)

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Research

13 pages, 11263 KiB  
Article
Peculiarities of the Structure of Au-TiO2 and Au-WO3 Plasmonic Nanocomposites
by Yerulan Sagidolda, Saule Yergaliyeva, Zhandos Tolepov, Guzal Ismailova, Bakytzhan Orynbay, Renata Nemkayeva, Oleg Prikhodko, Svetlana Peshaya, Suyumbika Maksimova, Nazim Guseinov and Yerzhan Mukhametkarimov
Materials 2023, 16(20), 6809; https://doi.org/10.3390/ma16206809 - 22 Oct 2023
Cited by 2 | Viewed by 909
Abstract
As nanotechnology continues to advance, the study of nanocomposites and their unique properties is at the forefront of research. There are still various blank spots in understanding the behavior of such composite materials, especially regarding plasmonic effects like localized surface plasmon resonance (LSPR) [...] Read more.
As nanotechnology continues to advance, the study of nanocomposites and their unique properties is at the forefront of research. There are still various blank spots in understanding the behavior of such composite materials, especially regarding plasmonic effects like localized surface plasmon resonance (LSPR) which is essential for developing advanced nanotechnologies. In this work, we explore the structural properties of composite thin films consisting of oxide matrices and gold nanoparticles (Au NPs), which were prepared by radio-frequency magnetron sputtering. Titanium dioxide (TiO2) and tungsten trioxide (WO3) were chosen as the host matrices of the composites. Such composite thin films owing to the presence of Au NPs demonstrate the LSPR phenomenon in the visible region. It is shown, that spectroscopic study, in particular, Raman spectroscopy can reveal peculiar features of structures of such composite systems due to LSPR and photoluminescence (PL) of Au NPs in the visible spectrum. In particular, defect peaks of TiO2 (700–720 cm−1) or WO3 (935 cm−1) in Raman spectra can be clearly observed when the samples are illuminated with a 633 nm excitation laser. Excitation with 532 nm leads to a decrease in the intensity of the defect peak, which totally disappears at 473 nm excitation. Such dependences of the defect peaks on excitation laser wavelength are probably related to the polarization of the matrix’s defective regions close to the interface with gold NPs. Full article
(This article belongs to the Special Issue Advances in Metal Oxide Semiconductor Thin Films and Devices)
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