Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
5.2
3.4
Journals
Materials
Special Issues
Advances in Semiconductor and Dielectric Materials
materials-logo
Submit to Materials Review for Materials Propose a Special Issue

Journal Menu

► Journal Menu

Journal Browser

► Journal Browser
share announcement

Advances in Semiconductor and Dielectric Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (10 March 2024) | Viewed by 5941

Special Issue Editor

Prof. Dr. Rene A. Castro Arata

E-Mail Website
Guest Editor
Department of Electronic Physics, The Herzen State Pedagogical University of Russia, Saint-Petersburg 191186, Russia
Interests: semiconductor and dielectric materials; disordered systems; nano- and microstructures; dielectric and optical spectroscopy; surfaces and thin films
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductor and dielectric materials are important for use in micro- and nanoelectronics, optical communication systems, as well as in devices such as thin film transistors, planar waveguides, solar elements, LEDs, and gas sensors. The synthesis of these materials, alongside the acquisition of physical information on their structural, optical, and electronic properties, is very important for the development of new stable devices based on them. The new Special Issue of “Materials” will include original research articles and review papers written by leading scholars in the field of materials science and technology.

We look forward to receiving your contribution

Prof. Dr. Rene A. Castro Arata
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductor and dielectric materials
  • properties and devices
  • micro- and optoelectronics

Published Papers (5 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

20 pages, 2823 KiB  
Article
Enhancing Photostability of Complex Lead Halides through Modification with Antibacterial Drug Octenidine
by Victoria V. Ozerova, Ivan S. Zhidkov, Nikita A. Emelianov, Denis V. Korchagin, Gennady V. Shilov, Fedor A. Prudnov, Igor V. Sedov, Ernst Z. Kurmaev, Lyubov A. Frolova and Pavel A. Troshin
Materials 2024, 17(1), 129; https://doi.org/10.3390/ma17010129 - 26 Dec 2023
Viewed by 804
Abstract
The high power-conversion efficiencies of hybrid perovskite solar cells encourage many researchers. However, their limited photostability represents a serious obstacle to the commercialization of this promising technology. Herein, we present an efficient method for improving the intrinsic photostability of a series of commonly [...] Read more.
The high power-conversion efficiencies of hybrid perovskite solar cells encourage many researchers. However, their limited photostability represents a serious obstacle to the commercialization of this promising technology. Herein, we present an efficient method for improving the intrinsic photostability of a series of commonly used perovskite material formulations such as MAPbI3, FAPbI3, Cs0.12FA0.88PbI3, and Cs0.10MA0.15FA0.75PbI3 through modification with octenidine dihydroiodide (OctI2), which is a widely used antibacterial drug with two substituted pyridyl groups and two cationic centers in its molecular framework. The most impressive stabilizing effects were observed in the case of FAPbI3 and Cs0.12FA0.88PbI3 absorbers that were manifested in significant suppression or even blocking of the undesirable perovskite films’ recrystallization and other decomposition pathways upon continuous 110 mW/cm2 light exposure. The achieved material photostability—within 9000 h for the Oct(FA)n−1PbnI3n+1 (n = 40–400) and 20,000 h for Oct(Cs0.12FA0.88)n−1PbnI3n+1 (where n = 40–400) formulations—matches the highest values ever reported for complex lead halides. It is important to note that the stabilizing effect is maintained when OctI2 is used only as a perovskite surface-modifying agent. Using a two-cation perovskite composition as an example, we showed that the performances of the solar cells based on the developed Oct(Cs0.12FA0.88)399Pb400I1201 absorber material are comparable to that of the reference devices based on the unmodified perovskite composition. These findings indicate a great potential of the proposed approach in the design of new highly photostable and efficient light absorbers. We believe that the results of this study will also help to establish important guidelines for the rational material design to improve the operational stability of perovskite solar cells. Full article
(This article belongs to the Special Issue Advances in Semiconductor and Dielectric Materials)
►▼ Show Figures

Figure 1

14 pages, 3326 KiB  
Article
Polarization Processes in Nafion Composite Membranes Doped with Rare-Earth Metals
by Rene Castro, Elena Karulina and Nikolay Lapatin
Materials 2023, 16(18), 6172; https://doi.org/10.3390/ma16186172 - 12 Sep 2023
Cited by 3 | Viewed by 664
Abstract
Dielectric spectroscopy (frequency range f = 100…107 Hz and temperatures T = 293…403 K (accuracy 0.5 K), measuring voltage applied to the sample was 1.0 V) was used to study composite materials based on perfluorosulfonic membranes with inclusions of rare-earth [...] Read more.
Dielectric spectroscopy (frequency range f = 100…107 Hz and temperatures T = 293…403 K (accuracy 0.5 K), measuring voltage applied to the sample was 1.0 V) was used to study composite materials based on perfluorosulfonic membranes with inclusions of rare-earth elements, in particular, europium (III) and terbium (III) chlorides. The dispersion of the permittivity and the presence of maxima, corresponding to losses, were revealed, which indicates that relaxation processes of various natures were present. The membrane layers under investigation are characterized by relaxation parameters that correspond to a symmetrical distribution of relaxers over relaxation times. The spectrum of relaxers changed when terbium and europium metal impurities were introduced into the polymer matrix. The investigation of these polymer systems demonstrated a power-law dependence of the specific conductivity on frequency. A decrease in the exponent with increasing temperature indicates the existence of a traditional hopping mechanism for charge transfer. The observed changes in the dielectric permittivity and specific conductivity are due to a change in the nature of polarization processes because of the strong interaction of metal (terbium and europium) ions with the polymer matrix of Nafion. Full article
(This article belongs to the Special Issue Advances in Semiconductor and Dielectric Materials)
►▼ Show Figures

Figure 1

15 pages, 3097 KiB  
Article
New Benzotrithiophene-Based Molecules as Organic P-Type Semiconductor for Small-Molecule Organic Solar Cells
by Cristian Castillo, Andrés Aracena, Luis Ballesteros, Gloria Neculqueo, Loik Gence and Franck Quero
Materials 2023, 16(10), 3759; https://doi.org/10.3390/ma16103759 - 16 May 2023
Viewed by 1265
Abstract
A new benzotrithiophene-based small molecule, namely 2,5,8-Tris[5-(2,2-dicyanovinyl)-2-thienyl]-benzo[1,2-b:3,4-b′:6,5-b″]-trithiophene (DCVT-BTT), was successfully synthesized and subsequently characterized. This compound was found to present an intense absorption band at a wavelength position of ∼544 nm and displayed potentially relevant optoelectronic properties for photovoltaic devices. Theoretical studies demonstrated [...] Read more.
A new benzotrithiophene-based small molecule, namely 2,5,8-Tris[5-(2,2-dicyanovinyl)-2-thienyl]-benzo[1,2-b:3,4-b′:6,5-b″]-trithiophene (DCVT-BTT), was successfully synthesized and subsequently characterized. This compound was found to present an intense absorption band at a wavelength position of ∼544 nm and displayed potentially relevant optoelectronic properties for photovoltaic devices. Theoretical studies demonstrated an interesting behavior of charge transport as electron donor (hole-transporting) active material for heterojunction cells. A preliminary study of small-molecule organic solar cells based on DCVT-BTT (as the P-type organic semiconductor) and phenyl-C61-butyric acid methyl ester (as the N-type organic semiconductor) exhibited a power conversion efficiency of 2.04% at a donor: acceptor weight ratio of 1:1. Full article
(This article belongs to the Special Issue Advances in Semiconductor and Dielectric Materials)
►▼ Show Figures

Figure 1

13 pages, 4347 KiB  
Article
Obtaining of Mg-Zn Co-Doped GaN Powders via Nitridation of the Ga-Mg-Zn Metallic Solution and Their Structural and Optical Properties
by Erick Gastellóu, Rafael García, Ana M. Herrera, Antonio Ramos, Godofredo García, Gustavo A. Hirata, José A. Luna, Roberto C. Carrillo, Jorge A. Rodríguez, Mario Robles, Yani D. Ramírez and Guillermo Martínez
Materials 2023, 16(8), 3272; https://doi.org/10.3390/ma16083272 - 21 Apr 2023
Viewed by 1267
Abstract
Mg-Zn co-dopedGaN powders via the nitridation of a Ga-Mg-Zn metallic solution at 1000 °C for 2 h in ammonia flow were obtained. XRD patterns for the Mg-Zn co-dopedGaN powders showed a crystal size average of 46.88 nm. Scanning electron microscopy micrographs had an [...] Read more.
Mg-Zn co-dopedGaN powders via the nitridation of a Ga-Mg-Zn metallic solution at 1000 °C for 2 h in ammonia flow were obtained. XRD patterns for the Mg-Zn co-dopedGaN powders showed a crystal size average of 46.88 nm. Scanning electron microscopy micrographs had an irregular shape, with a ribbon-like structure and a length of 8.63 µm. Energy-dispersive spectroscopy showed the incorporation of Zn (Lα 1.012 eV) and Mg (Kα 1.253 eV), while XPS measurements showed the elemental contributions of magnesium and zinc as co-dopant elements quantified in 49.31 eV and 1019.49 eV, respectively. The photoluminescence spectrum showed a fundamental emission located at 3.40 eV(364.70 nm), which was related to band-to-band transition, besides a second emission found in a range from 2.80 eV to 2.90 eV (442.85–427.58 nm), which was related to a characteristic of Mg-doped GaN and Zn-doped GaN powders. Furthermore, Raman scattering demonstrated a shoulder at 648.05 cm−1, which could indicate the incorporation of the Mg and Zn co-dopants atoms into the GaN structure. It is expected that one of the main applications of Mg-Zn co-doped GaN powders is in obtaining thin films for SARS-CoV-2 biosensors. Full article
(This article belongs to the Special Issue Advances in Semiconductor and Dielectric Materials)
►▼ Show Figures

Figure 1

9 pages, 2059 KiB  
Article
Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/αTiOx/Al Resistive Random Access Memory Devices
by Jung-Kyu Lee, Juyeong Pyo and Sungjun Kim
Materials 2023, 16(6), 2317; https://doi.org/10.3390/ma16062317 - 14 Mar 2023
Viewed by 1345
Abstract
In this work, we analyze a resistive switching random access memory (RRAM) device with the metal–insulator–metal structure of Al/αTiOx/Al. The transport mechanism of our RRAM device is trap-controlled space-charge limited conduction, which does not change during the endurance test. As the [...] Read more.
In this work, we analyze a resistive switching random access memory (RRAM) device with the metal–insulator–metal structure of Al/αTiOx/Al. The transport mechanism of our RRAM device is trap-controlled space-charge limited conduction, which does not change during the endurance test. As the number of resistive switching (RS) cycles increases, the current in the low-resistance state (LRS) does not change significantly. In contrast, degradation in the high-resistance state (HRS) is noticeably evident. According to the RS cycle, the current shift fits well with the stretched-exponential equation. The normalized noise power spectral density (Si/I2) measured in the HRS is an order of magnitude higher than that in the LRS owing to the difference in the degree of trap occupancy, which is responsible for the transition of resistance states. During the consecutive RS, the Si/I2 in the HRS rapidly decreases for approximately 100 cycles and then saturates. In contrast, in the LRS, the Si/I2 does not change significantly. Here we propose a model associated with the endurance degradation of the experimental device, and the model is verified with a 1/f noise measurement. Full article
(This article belongs to the Special Issue Advances in Semiconductor and Dielectric Materials)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-5
Back to TopTop