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Emerging Materials and Their Use in Electronic Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (30 June 2023) | Viewed by 1492

Special Issue Editor


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Guest Editor
Department of Chemical Engineering, Dankook University, Seoul, Korea
Interests: polymer dielectric materials; thin-film transistors (TFTs); organic semiconductors; 2D semiconducting materials; flexible electronics

Special Issue Information

Dear Colleagues,

With the rapidly growing demand for next-generation electronic devices beyond conventional silicon-based technology, new materials and devices have been extensively suggested over the past several decades. The attractive properties of new materials such as mechanical flexibility and unique physical/electronic properties make the materials and devices discernable from conventional ones.

This Special Issue aims to broadly cover the emerging materials and their applications in electronic devices, ranging from theoretical understanding and the characterization of emerging electronic materials to the design, fabrication process, and analysis of electronic devices based on those emerging electronic materials. This Special Issue also includes current progress and future directions of materials and devices for electronic applications. The following topics are particularly of interest:

  • Emerging semiconductor materials such as low-dimensional semiconducting materials, organic semiconductors, carbon nanotubes, and metal-oxide semiconductors are considered key components of future semiconductor devices.
  • Dielectric materials, including organic dielectrics, inorganic dielectrics, and their hybrid forms, play a critical role in operating electronic devices because they determine reliability and power consumption. Moreover, the dielectric layers make an interface with semiconductor or metal layers, which is critically important in device performance.
  • The demonstration of electronic devices is important to verify the practical applicability of newly developed electronic materials. This Special Issue covers various kinds of electronic devices, particularly thin-film transistors and related devices such as memories, integrated circuits, and sensors as well as other types of devices composed of new dielectric and/or semiconductor materials.

Dr. Junhwan Choi
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • organic semiconductors
  • low-dimensional semiconducting materials
  • metal-oxide semiconductors
  • organic dielectrics
  • inorganic dielectrics
  • organic/inorganic hybrid dielectrics
  • thin-film transistors (TFTs)
  • memory devices
  • TFT-based sensors

Published Papers (1 paper)

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Research

11 pages, 3183 KiB  
Article
A Study on Optimal Indium Tin Oxide Thickness as Transparent Conductive Electrodes for Near-Ultraviolet Light-Emitting Diodes
by Min-Ju Kim
Materials 2023, 16(13), 4718; https://doi.org/10.3390/ma16134718 - 29 Jun 2023
Cited by 3 | Viewed by 1190
Abstract
This research study thoroughly examines the optimal thickness of indium tin oxide (ITO), a transparent electrode, for near-ultraviolet (NUV) light-emitting diodes (LEDs) based on InGaN/AlGaInN materials. A range of ITO thicknesses from 30 to 170 nm is investigated, and annealing processes are performed [...] Read more.
This research study thoroughly examines the optimal thickness of indium tin oxide (ITO), a transparent electrode, for near-ultraviolet (NUV) light-emitting diodes (LEDs) based on InGaN/AlGaInN materials. A range of ITO thicknesses from 30 to 170 nm is investigated, and annealing processes are performed to determine the most favorable figure of merit (FOM) by balancing transmittance and sheet resistance in the NUV region. Among the films of different thicknesses, an ITO film measuring 110 nm, annealed at 550 °C for 1 min, demonstrates the highest FOM. This film exhibits notable characteristics, including 89.0% transmittance at 385 nm, a sheet resistance of 131 Ω/□, and a contact resistance of 3.1 × 10−3 Ω·cm2. Comparing the performance of NUV LEDs using ITO films of various thicknesses (30, 50, 70, 90, 130, 150, and 170 nm), it is observed that the NUV LED employing ITO with a thickness of 110 nm achieves a maximum 48% increase in light output power at 50 mA while maintaining the same forward voltage at 20 mA. Full article
(This article belongs to the Special Issue Emerging Materials and Their Use in Electronic Applications)
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