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Electronics
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Analog Microelectronic Circuit Design and Applications
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Analog Microelectronic Circuit Design and Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".

Deadline for manuscript submissions: closed (31 October 2021) | Viewed by 17598

Special Issue Editor

Prof. Dr. Igor Filanovsky

E-Mail Website
Guest Editor
Department of Electrical & Computer Engineering, University of Alberta, Edmonton, AB, Canada
Interests: circuit theory; theory and technical applications of oscillations; analog microelectronic circuit design; circuits for sensor applications
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

We are inviting the wide community of practicing electronic engineers and scientists working in industry, government, and academia to participate in the Special Issue on Analog Microelectronic Circuit Design and Applications. The purpose of this Special Issue is to provide a collection of papers covering the broad spectrum of analog electronics, namely: monolithic device models, high performance analog circuits, radio-frequency communications and PLL circuits, and data converters. The goal is to provide the most up-to-date information in the field.

Over the years, the fundamentals of analog microelectronic circuit designs have evolved to include a wide range of topics and a broad range of practices. To encompass such a wide range of knowledge, this Issue should focus on the key concepts, models, and equations that enable design engineers to analyze, design, and predict the behaviour of analog large-scale circuits and systems. While design formulas and tables are welcomed, emphasis should be placed on the key concepts and theories underlying the processes.

This Special Issue’s papers should stress the fundamental theories behind professional applications and demonstrate examples to reinforce this point. Extensive development of theory and details of proofs should be omitted.

The compilation of this Issue will not been possible without the dedication and efforts of all the contributing authors. I wish to thank all of them in advance.

Topics of interest will include:

  • CMOS device models
  • Operational amplifiers
  • Low-dropout regulators
  • Sinusoidal oscillators
  • Wideband amplifiers
  • Analog phase-locked loop circuits
  • Radio-frequency receivers
  • Digital-to-analog converters

Prof. Dr. Igor Filanovsky
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • RF-CMOS
  • operational amplifier
  • differential amplifier
  • instrumentation amplifier
  • low dropout (LDO) regulator
  • microwave amplifier
  • RF receiver
  • wireless communication
  • flexible electronics
  • phase-locked loop (PLL)
  • phase noise immunity
  • analog sensing
  • current sensing
  • analog-to-digital converter

Published Papers (6 papers)

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Research

10 pages, 20095 KiB  
Article
A High-Speed Programmable Frequency Divider for a Ka-Band Phase Locked Loop-Type Frequency Synthesizer in 90-nm CMOS
by Lu Tang, Kuidong Chen, Youming Zhang, Xusheng Tang and Changchun Zhang
Electronics 2021, 10(20), 2494; https://doi.org/10.3390/electronics10202494 - 13 Oct 2021
Cited by 2 | Viewed by 2134
Abstract
A high-speed programmable frequency divider for a Ka-band phase-locked loop (PLL)-type frequency synthesizer system is presented and fabricated in 90 nm CMOS technology. It consists mainly of a divided-by-8/9 dual-modulus prescaler (DMP) and pulse swallow counters. An active-inductor-based source-coupled logic (SCL) D flip-flop [...] Read more.
A high-speed programmable frequency divider for a Ka-band phase-locked loop (PLL)-type frequency synthesizer system is presented and fabricated in 90 nm CMOS technology. It consists mainly of a divided-by-8/9 dual-modulus prescaler (DMP) and pulse swallow counters. An active-inductor-based source-coupled logic (SCL) D flip-flop (DFF) and the “OR” gate are used in the DMP in order to promote its locking range and operation frequency. The measured operation frequency range of the improved programmable frequency divider covers from 6 to 20 GHz with a low phase noise of less than −136 dBc/Hz at a 1 MHz offset of output signals, an optimum sensitivity of −27 dBm at 15 GHz, and a low power consumption of 9.1 mW. Full article
(This article belongs to the Special Issue Analog Microelectronic Circuit Design and Applications)
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17 pages, 3833 KiB  
Article
Noise Efficient Integrated Amplifier Designs for Biomedical Applications
by Sebastian Simmich, Andreas Bahr and Robert Rieger
Electronics 2021, 10(13), 1522; https://doi.org/10.3390/electronics10131522 - 23 Jun 2021
Cited by 9 | Viewed by 3785
Abstract
The recording of neural signals with small monolithically integrated amplifiers is of high interest in research as well as in commercial applications, where it is common to acquire 100 or more channels in parallel. This paper reviews the recent developments in low-noise biomedical [...] Read more.
The recording of neural signals with small monolithically integrated amplifiers is of high interest in research as well as in commercial applications, where it is common to acquire 100 or more channels in parallel. This paper reviews the recent developments in low-noise biomedical amplifier design based on CMOS technology, including lateral bipolar devices. Seven major circuit topology categories are identified and analyzed on a per-channel basis in terms of their noise-efficiency factor (NEF), input-referred absolute noise, current consumption, and area. A historical trend towards lower NEF is observed whilst absolute noise power and current consumption exhibit a widespread over more than five orders of magnitude. The performance of lateral bipolar transistors as amplifier input devices is examined by transistor-level simulations and measurements from five different prototype designs fabricated in 180 nm and 350 nm CMOS technology. The lowest measured noise floor is 9.9 nV/√Hz with a 10 µA bias current, which results in a NEF of 1.2. Full article
(This article belongs to the Special Issue Analog Microelectronic Circuit Design and Applications)
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12 pages, 3629 KiB  
Article
LED Rail Signals: Full Hardware Realization of Apparatus with Independent Intensity by Temperature Changes
by Giuseppe Schirripa Spagnolo and Fabio Leccese
Electronics 2021, 10(11), 1291; https://doi.org/10.3390/electronics10111291 - 28 May 2021
Cited by 6 | Viewed by 2461
Abstract
Nowadays, signal lights are made using light-emitting diode arrays (LEDs). These devices are extremely energy efficient and have a very long lifetime. Unfortunately, especially for yellow/amber LEDs, the intensity of the light is closely related to the junction temperature. This makes it difficult [...] Read more.
Nowadays, signal lights are made using light-emitting diode arrays (LEDs). These devices are extremely energy efficient and have a very long lifetime. Unfortunately, especially for yellow/amber LEDs, the intensity of the light is closely related to the junction temperature. This makes it difficult to design signal lights to be used in naval, road, railway, and aeronautical sectors, capable of fully respecting national and international regulations. Furthermore, the limitations prescribed by the standards must be respected in a wide range of temperature variations. In other words, in the signaling apparatuses, a system that varies the light intensity emitted according to the operating temperature is useful/necessary. In this paper, we propose a simple and effective solution. In order to adjust the intensity of the light emitted by the LEDs, we use an LED identical to those used to emit light as a temperature sensor. The proposed system was created and tested in the laboratory. As the same device as the ones to be controlled is used as the temperature sensor, the system is very stable and easy to set up. Full article
(This article belongs to the Special Issue Analog Microelectronic Circuit Design and Applications)
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17 pages, 1603 KiB  
Article
Self-Biased and Supply-Voltage Scalable Inverter-Based Operational Transconductance Amplifier with Improved Composite Transistors
by Luis Henrique Rodovalho, Cesar Ramos Rodrigues and Orazio Aiello
Electronics 2021, 10(8), 935; https://doi.org/10.3390/electronics10080935 - 14 Apr 2021
Cited by 22 | Viewed by 3410
Abstract
This paper deals with a single-stage single-ended inverter-based Operational Transconductance Amplifiers (OTA) with improved composite transistors for ultra-low-voltage supplies, while maintaining a small-area, high power-efficiency and low output signal distortion. The improved composite transistor is a combination of the conventional composite transistor and [...] Read more.
This paper deals with a single-stage single-ended inverter-based Operational Transconductance Amplifiers (OTA) with improved composite transistors for ultra-low-voltage supplies, while maintaining a small-area, high power-efficiency and low output signal distortion. The improved composite transistor is a combination of the conventional composite transistor and forward-body-biasing to further increase voltage gain. The impact of the proposed technique on performance is demonstrated through post-layout simulations referring to the TSMC 180 nm technology process. The proposed OTA achieves 54 dB differential voltage gain, 210 Hz gain–bandwidth product for a 10 pF capacitive load, with a power consumption of 273 pW with a 0.3 V power supply, and occupies an area of 1026 μm2. For a 0.6 V voltage supply, the proposed OTA improves its voltage gain to 73 dB, and achieves a 15 kHz gain–bandwidth product with a power consumption of 41 nW. Full article
(This article belongs to the Special Issue Analog Microelectronic Circuit Design and Applications)
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17 pages, 6312 KiB  
Article
Wideband Reconfigurable Integrated Low-Pass Filter for 5G Compatible Software Defined Radio Solutions
by Karolis Kiela, Marijan Jurgo, Vytautas Macaitis and Romualdas Navickas
Electronics 2021, 10(6), 734; https://doi.org/10.3390/electronics10060734 - 19 Mar 2021
Cited by 5 | Viewed by 2624
Abstract
This article presents a wideband reconfigurable integrated low-pass filter (LPF) for 5G NR compatible software-defined radio (SDR) solutions. The filter uses Active-RC topology to achieve high linearity performance. Its bandwidth can be tuned from 2.5 MHz to 200 MHz, which corresponds to a [...] Read more.
This article presents a wideband reconfigurable integrated low-pass filter (LPF) for 5G NR compatible software-defined radio (SDR) solutions. The filter uses Active-RC topology to achieve high linearity performance. Its bandwidth can be tuned from 2.5 MHz to 200 MHz, which corresponds to a tuning ratio of 92.8. The order of the filter can be changed between the 2nd, 4th, or 6th order; it has built-in process, voltage, and temperature (PVT) compensation with a tuning range of ±42%; and power management features for optimization of the filter performance across its entire range of bandwidth tuning. Across its entire order, bandwidth, and power configuration range, the filter achieves in-band input-referred third-order intercept point (IIP3) between 32.7 dBm and 45.8 dBm, spurious free dynamic range (SFDR) between 63.6 dB and 79.5 dB, 1 dB compression point (P1dB) between 9.9 dBm and 14.1 dBm, total harmonic distortion (THD) between −85.6 dB and −64.5 dB, noise figure (NF) between 25.9 dB and 31.8 dB and power dissipation between 1.19 mW and 73.4 mW. The LPF was designed and verified using 65 nm CMOS process; it occupies a 0.429 mm2 area of silicon and uses a 1.2 V supply. Full article
(This article belongs to the Special Issue Analog Microelectronic Circuit Design and Applications)
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10 pages, 3515 KiB  
Article
Nonuniformity-Immune Read-In Integrated Circuit for Infrared Sensor Testing Systems
by Minji Cho, Heechul Lee and Doohyung Woo
Electronics 2020, 9(10), 1603; https://doi.org/10.3390/electronics9101603 - 01 Oct 2020
Viewed by 1782
Abstract
In this study, a novel IR projector driver that can minimize nonuniformity in electric circuits, using a dual-current-programming structure, is proposed to generate high-quality infrared (IR) scenes for accurate sensor evaluation. Unlike the conventional current-mode structure, the proposed system reduces pixel-to-pixel nonuniformity by [...] Read more.
In this study, a novel IR projector driver that can minimize nonuniformity in electric circuits, using a dual-current-programming structure, is proposed to generate high-quality infrared (IR) scenes for accurate sensor evaluation. Unlike the conventional current-mode structure, the proposed system reduces pixel-to-pixel nonuniformity by assigning two roles (data sampling and current driving) to a single transistor. A prototype of the proposed circuit was designed and fabricated using the SK-Hynix 0.18 µm CMOS process, and its performance was analyzed using post-layout simulation data. It was verified that nonuniformity, which is defined as the standard deviation divided by the mean radiance, could be reduced from 21% to less than 0.1%. Full article
(This article belongs to the Special Issue Analog Microelectronic Circuit Design and Applications)
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