Novel Wide-Bandgap Semiconductor Materials and Devices

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (30 April 2023)

Special Issue Editors

1. Nano-Devices and Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
2. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC), Hefei 230026, China
Interests: III–V nanowires; self-powered wide-band devices; flexible optoelectronic devices; GaN-based nanomaterials; novel semiconductor devices; molecular beam epitaxy

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Guest Editor
Department of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Interests: plasmonic-enhanced LEDs; hyperbolic metamaterials; nanoantenna; micro-LEDs; flexible optical devices; visible-light communication devices
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Guest Editor
School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
Interests: self-powered photodetectors; semiconductor nanowires; GaN-based quantum dots; flexible optoelectronic sensors; nanowire physics

Special Issue Information

Dear Colleagues,

Wide-bandgap semiconductor materials have unique electrical and optical properties, which can be used in preparing novel devices, including flexible, self-powered and low-dimensional devices, etc. For example, flexible wide-bandgap semiconductor devices can be indispensable parts in next-generation functional devices in various fields, such as wearable intelligent electronics, flexible screens and automobile windshield navigation. Furthermore, self-powered optoelectronic devices can be indispensable and energy-saving devices, making systems economical and simple due to their ability to work independently for a long time. Therefore, novel wide-bandgap semiconductor materials and devices could provide many novel functionalities, and have the potential to introduce a novel branch of industry. The development of wide-bandgap semiconductors, however, does not only offer opportunities, but also faces great challenges. With the increasing requirements of novel optoelectronic devices and power devices for high flexibility, high transparency, high speed and low power consumption, it is urgent to develop and improve existing materials and seek novel ones, with promising potential in the development of non-natural/artificially structured materials, including semiconductor nanowires, quantum dots, metamaterials, etc. As a result, the growth, fabrication and characterization of novel wide-bandgap semiconductor materials and devices need to be strengthened and improved, due to their substantial promise in industrial applications.

In this Special Issue, we are interested in articles and reviews showing the latest developments and achievements in the field of novel wide-bandgap semiconductor materials and devices.

Dr. Yukun Zhao
Dr. Zhenhuan Tian
Dr. Jianya Zhang
Guest Editors

Manuscript Submission Information

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Keywords

  • III–V semiconductors
  • nanowire materials and devices
  • self-powered semiconductor devices
  • flexible wide-bandgap semiconductor devices
  • transparent semiconductor devices
  • wide-bandgap power devices
  • wide-bandgap semiconductor crystal growth
  • novel wide-bandgap optoelectronic devices
  • wide-bandgap nanomaterials and nanodevices
  • semiconductor quantum dots

Published Papers (1 paper)

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Research

11 pages, 3189 KiB  
Article
Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering
by Hongjuan Huang, Desheng Zhao, Chengjian Qi, Jingfa Huang, Zhongming Zeng, Baoshun Zhang and Shulong Lu
Crystals 2022, 12(12), 1810; https://doi.org/10.3390/cryst12121810 - 12 Dec 2022
Cited by 2 | Viewed by 1713
Abstract
Ge1−xSnx film with Sn content (at%) as high as 13% was grown on Si (100) substrate with Ge buffer layer by magnetron sputtering epitaxy. According to the analysis of HRXRD and Raman spectrum, the quality of the Ge1−xSn [...] Read more.
Ge1−xSnx film with Sn content (at%) as high as 13% was grown on Si (100) substrate with Ge buffer layer by magnetron sputtering epitaxy. According to the analysis of HRXRD and Raman spectrum, the quality of the Ge1−xSnx crystal was strongly dependent on the growth temperature. Among them, the GeSn (400) diffraction peak of the Ge1−xSnx film grown at 240 °C was the lowest, which is consistent with the Raman result. According to the transmission electron microscope image, some dislocations appeared at the interface between the Ge buffer layer and the Si substrate due to the large lattice mismatch, but a highly ordered atomic arrangement was observed at the interface between the Ge buffer layer and the Ge1−xSnx layer. The Ge1−xSnx film prepared by magnetron sputtering is expected to be a cost-effective fabrication method for Si-based infrared devices. Full article
(This article belongs to the Special Issue Novel Wide-Bandgap Semiconductor Materials and Devices)
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