Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Growth Temperature (°C) | (nm) | (nm) | (nm) | xm (%) | R (%) | (%) |
---|---|---|---|---|---|---|
180 | 0.57702 | 0.56998 | 0.57399 | 9.98 | 41.1 | −0.007 |
200 | 0.57676 | 0.56990 | 0.57381 | 10.25 | 40.9 | −0.007 |
225 | 0.57860 | 0.57688 | 0.57786 | 14.29 | 91 | −0.002 |
240 | 0.57871 | 0.57738 | 0.57813 | 15.38 | 93.2 | −0.001 |
250 | 0.57826 | 0.57616 | 0.57735 | 13.79 | 88.2 | −0.002 |
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Huang, H.; Zhao, D.; Qi, C.; Huang, J.; Zeng, Z.; Zhang, B.; Lu, S. Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering. Crystals 2022, 12, 1810. https://doi.org/10.3390/cryst12121810
Huang H, Zhao D, Qi C, Huang J, Zeng Z, Zhang B, Lu S. Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering. Crystals. 2022; 12(12):1810. https://doi.org/10.3390/cryst12121810
Chicago/Turabian StyleHuang, Hongjuan, Desheng Zhao, Chengjian Qi, Jingfa Huang, Zhongming Zeng, Baoshun Zhang, and Shulong Lu. 2022. "Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering" Crystals 12, no. 12: 1810. https://doi.org/10.3390/cryst12121810