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Applied Sciences
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III-V Nitride: Materials, Physics and Devices
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III-V Nitride: Materials, Physics and Devices

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Applied Physics General".

Deadline for manuscript submissions: closed (15 June 2019) | Viewed by 27239

Special Issue Editors

Dr. Liwen Sang

E-Mail Website
Guest Editor
International Center for Materials Nanoarchitectonics, National Insitute for Materials Science, 1 Chome Namiki 305-0044, Japan
Interests: III-V Nitride; epitaxial growth; MOS/MIS interface; power devices; solar cells; photodiodes; electronic devices
Special Issues, Collections and Topics in MDPI journals
Dr. Masataka Imura

E-Mail Website
Guest Editor
Senior Researcher, Electric and Electronic Materials Field, Wide Bandgap Semiconductors Group, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Japan
Interests: diamond; III-V Nitrides; nitride/diamond heterojunction; heteroepitaxial growth; optoelectronic devices; field effect transistors

Special Issue Information

Dear Colleagues,

During the last decades, III-V nitrides materials and their optical/electronic devices have seen much spectacular research and applications, such as light emitting diodes (LEDs), laser diodes (LDs), photodiodes, solar cells, RF transistors, and power devices. High-crystalline quality GaN, AlN, AlGaN, InGaN layers and their structures have been developed by metal–organic chemical vapor deposition (MOCVD) or molecular beam evaporation (MBE) not only on foreign substrates such as sapphire, SiC or Si substrates, but also on the free-standing GaN substrates benefitting from the recent development of bulks with low-density threading dislocations (103-106cm-2). Considerable efforts have made to investigate the physical properties of dislocations, strain, or point defects. For the devices, high-brightness blue, green and white LEDs have been commercialized, and UV-LEDs have been rapidly developing in recent years. The high-power optical and electrical pump laser diodes have also been achieved on bulks or Si substrates. In the electronic devices, due to the existence of two-dimensional electron gas with excellent transport properties, the AlGaN/GaN high electron mobility transistor (HEMT) structure is the preferred choice for high-frequency and high-power RF/MW applications. Especially with the development of a high-quality AlGaN/GaN heterostructure on Si substrate and the high-crystalline quality free-standing GaN substrates, the horizontal-type and vertical-type power devices based on GaN are promising to reduce losses and improve efficiency to break the limitations of Si.

This Special Issue of the journal Applied Sciences, ‘III-V Nitrides: material, physics and devices’, aims to cover the recent advances in the development of III-V nitrides materials and novel physics properties, as well as advanced device concepts and developments.

 

Dr. Masataka Imura
Dr. Sang Liwen
Guest Editors

Manuscript Submission Information

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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • III-V nitride, physics, optical devices, electronic devices.

Published Papers (7 papers)

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Research

10 pages, 6019 KiB  
Article
Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench
by Zeheng Wang, Zhenwei Zhang, Shengji Wang, Chao Chen, Zirui Wang and Yuanzhe Yao
Appl. Sci. 2019, 9(15), 3054; https://doi.org/10.3390/app9153054 - 29 Jul 2019
Cited by 14 | Viewed by 3499
Abstract
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized. Because the negative plasma-etching process, as well as the relaxing lattice during the process would introduce [...] Read more.
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized. Because the negative plasma-etching process, as well as the relaxing lattice during the process would introduce equivalent negative charges into the under-LCCT region, the electron will be partially squeezed out from this area. The electric field (E-field) around this region will therefore redistribute smoothly. Owing to this, the proposed LCCT-HEMT performs better in power applications. According to the simulation that is calibrated by the experimental data, the Baliga’s figure of merits (BFOM) of LCCT-HEMT is around two times higher than that of the conventional UTB-HEMT, hinting at the promising potential of proposed HEMT. Full article
(This article belongs to the Special Issue III-V Nitride: Materials, Physics and Devices)
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8 pages, 1574 KiB  
Article
Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates
by Bing Ren, Meiyong Liao, Masatomo Sumiya, Jian Huang, Linjun Wang, Yasuo Koide and Liwen Sang
Appl. Sci. 2019, 9(14), 2895; https://doi.org/10.3390/app9142895 - 19 Jul 2019
Cited by 19 | Viewed by 3511
Abstract
The authors report on a vertical-type visible-blind ultraviolet (UV) Schottky-type photodetector fabricated on a homoepitaxial GaN layer grown on free-standing GaN substrates with a semi-transparent Ni Schottky contact. Owing to the high-quality GaN drift layer with low-density threading dislocation and high electron mobility, [...] Read more.
The authors report on a vertical-type visible-blind ultraviolet (UV) Schottky-type photodetector fabricated on a homoepitaxial GaN layer grown on free-standing GaN substrates with a semi-transparent Ni Schottky contact. Owing to the high-quality GaN drift layer with low-density threading dislocation and high electron mobility, the UV photodetector shows a high specific detectivity of more than 1012 Jones and a UV/visible discrimination ratio of ~1530 at −5 V. The photodetector also shows the excellent self-powered photo-response and a high signal-to-noise ratio of more than 104 at zero voltage. It is found that a relatively lower growth rate for the GaN epilayer is preferred to improve the performance of the Schottky-type photodetectors due to the better microstructure and surface properties. Full article
(This article belongs to the Special Issue III-V Nitride: Materials, Physics and Devices)
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7 pages, 1076 KiB  
Article
Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs
by Chunyan Song, Xuelin Yang, Panfeng Ji, Jun Tang, Shan Wu, Yue Xu, Ali Imran, Maojun Wang, Zhijian Yang, Fujun Xu, Xinqiang Wang, Weikun Ge and Bo Shen
Appl. Sci. 2019, 9(11), 2373; https://doi.org/10.3390/app9112373 - 11 Jun 2019
Cited by 4 | Viewed by 4027
Abstract
The role of low-resistivity substrate on vertical leakage current (VLC) of AlGaN/GaN-on-Si epitaxial layers has been investigated. AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on both p-type and n-type Si substrates with low resistivity are applied to analyze the vertical leakage mechanisms. The activation energy [...] Read more.
The role of low-resistivity substrate on vertical leakage current (VLC) of AlGaN/GaN-on-Si epitaxial layers has been investigated. AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on both p-type and n-type Si substrates with low resistivity are applied to analyze the vertical leakage mechanisms. The activation energy (Ea) for p-type case is higher than that for n-type at 0–600 V obtained by temperature-dependent current-voltage measurements. An additional depletion region in the region of 0–400 V forms at the AlN/p-Si interface but not for AlN/n-Si. That depletion region leads to a decrease of electron injection and hence effectively reduces the VLC. While in the region of 400–600 V, the electron injection from p-Si substrate increases quickly compared to n-Si substrate, due to the occurrence of impact ionization in the p-Si substrate depletion region. The comparative results indicate that the doping type of low-resistivity substrate plays a key role for VLC. Full article
(This article belongs to the Special Issue III-V Nitride: Materials, Physics and Devices)
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8 pages, 3212 KiB  
Article
MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
by Haruka Matsuura, Takeyoshi Onuma, Masatomo Sumiya, Tomohiro Yamaguchi, Bing Ren, Meiyong Liao, Tohru Honda and Liwen Sang
Appl. Sci. 2019, 9(9), 1746; https://doi.org/10.3390/app9091746 - 27 Apr 2019
Cited by 3 | Viewed by 4931
Abstract
The investigation of the III-V nitride-based driving circuits is in demand for the development of GaN-based power electronic devices. In this work, we aim to grow high-quality InGaN/GaN heterojunctions on the n-channel AlGaN/GaN-on-Si high electron mobility transistor (HEMT) templates to pursue the [...] Read more.
The investigation of the III-V nitride-based driving circuits is in demand for the development of GaN-based power electronic devices. In this work, we aim to grow high-quality InGaN/GaN heterojunctions on the n-channel AlGaN/GaN-on-Si high electron mobility transistor (HEMT) templates to pursue the complementary p-channel conductivity to realize the monolithic integrated circuits. As the initial step, the epitaxial growth is optimized and the structure properties are investigated by comparing with the InGaN/GaN heterojunctions grown on GaN/sapphire templates. It is found that both the In composition and relaxation degree are higher for the InGaN/GaN on the HEMT template than that on the sapphire substrate. The crystalline quality is deteriorated for the InGaN grown on the HEMT template, which is attributed to the poor-quality GaN channel in the HEMT template. Further analysis indicates that the higher In incorporation in the InGaN layer on the HEMT template may be caused by the higher relaxation degree due to the compositional pulling effect. An increase in the growth temperature by 20 °C with optimized growth condition improves the crystalline quality of the InGaN, which is comparable to that on GaN/sapphire even if it is grown on a poor-quality GaN channel. Full article
(This article belongs to the Special Issue III-V Nitride: Materials, Physics and Devices)
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9 pages, 2703 KiB  
Article
Large-Area Ultraviolet Photodetectors Based on p-Type Multilayer MoS2 Enabled by Plasma Doping
by Xiao-Mei Zhang, Sian-Hong Tseng and Ming-Yen Lu
Appl. Sci. 2019, 9(6), 1110; https://doi.org/10.3390/app9061110 - 15 Mar 2019
Cited by 20 | Viewed by 4254
Abstract
Two-dimensional (2D) MoS2 has recently become of interest for applications in broad range photodetection due to their tunable bandgap. In order to develop 2D MoS2 photodetectors with ultrafast response and high responsivity, up-scalable techniques for realizing controlled p-type doping in [...] Read more.
Two-dimensional (2D) MoS2 has recently become of interest for applications in broad range photodetection due to their tunable bandgap. In order to develop 2D MoS2 photodetectors with ultrafast response and high responsivity, up-scalable techniques for realizing controlled p-type doping in MoS2 is necessary. In this paper, we demonstrate a p-type multilayer MoS2 photodetector with selective-area doping using CHF3 plasma treatment. Microscopic and spectroscopic characterization techniques, including atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), are used to investigate the morphological and electrical modification of the p-type doped MoS2 surface after CHF3 plasma treatment. Back-gated p-type MoS2 field-effect transistors (FETs) are fabricated with an on/off current ratio in the order of 103 and a field-effect mobility of 65.2 cm2V−1s−1. They exhibit gate-modulated ultraviolet photodetection with a rapid response time of 37 ms. This study provides a promising approach for the development of mild plasma-doped MoS2 as a 2D material in post-silicon electronic and optoelectronic device applications. Full article
(This article belongs to the Special Issue III-V Nitride: Materials, Physics and Devices)
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11 pages, 3898 KiB  
Article
Terahertz Wideband Filter Based on Sub-Wavelength Binary Simple Periodic Structure
by Pan Yao, Huang H.X., Lei Lei, Zou Yang, Xiao Y.F., Yang Tuo and Xu Ping
Appl. Sci. 2019, 9(3), 407; https://doi.org/10.3390/app9030407 - 25 Jan 2019
Cited by 6 | Viewed by 2439
Abstract
In this paper, a silicon-based terahertz wideband filter was designed using rigorous couple wave theory to achieve high diffraction efficiency and wideband filtering performance. The optimal parameters, such as filter period, duty ratio, and groove depth, are given. The design value and tolerance [...] Read more.
In this paper, a silicon-based terahertz wideband filter was designed using rigorous couple wave theory to achieve high diffraction efficiency and wideband filtering performance. The optimal parameters, such as filter period, duty ratio, and groove depth, are given. The design value and tolerance analysis were carried out to obtain the allowable deviation range of each structural parameter of the filter. The device was fabricated and tested for performance. The experimental results were consistent with the design results, proving the feasibility of the design method and can be applied in terahertz, communication, imaging, and other fields. Full article
(This article belongs to the Special Issue III-V Nitride: Materials, Physics and Devices)
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12 pages, 4401 KiB  
Article
Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies
by Ying Wang, Jinping Ao, Shibin Liu and Yue Hao
Appl. Sci. 2019, 9(1), 75; https://doi.org/10.3390/app9010075 - 26 Dec 2018
Cited by 7 | Viewed by 4054
Abstract
In this paper, a comprehensive evaluation of thermal behavior of the GaN vertical n+-n−-n-n+ Gunn diode have been carried out through simulation method. We explore the complex effects of various parameters on the device thermal performance through a [...] Read more.
In this paper, a comprehensive evaluation of thermal behavior of the GaN vertical n+-n−-n-n+ Gunn diode have been carried out through simulation method. We explore the complex effects of various parameters on the device thermal performance through a microscopic analysis of electron movements. These parameters include operation bias, doping level, and length of the active region. The increase of these parameters aggravates the self-heating effect and degrades the electron domains, which therefore reduces the overall performance output of the diode. However, appropriate increase of the doping level of active region makes the lattice heat distribute more uniformly and improves the device performance. For the first time, we propose the transition domain, which is in between the dipole domain and accumulation layer, and stands for the degradation of the electron domain. We have also demonstrated that dual domains occur in the device with longer active region length and higher doping level under EB (Energy balance) model, which enhances the harmonics component. Electric and thermal behaviors analysis of GaN vertical Gunn diode makes it possible to optimize the device. Full article
(This article belongs to the Special Issue III-V Nitride: Materials, Physics and Devices)
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