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Optoelectronic Sensors
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Optoelectronic Sensors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Optical Sensors".

Deadline for manuscript submissions: 20 September 2024 | Viewed by 2397

Special Issue Editors

Dr. Paul R. Ohodnicki

E-Mail Website
Guest Editor
Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA 15261, USA
Interests: optical-based sensing; electronic, photonic and magnetic materials; fiber-optics; plasmonics
Special Issues, Collections and Topics in MDPI journals
Dr. Dolendra Karki

E-Mail Website
Guest Editor
Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA 15261, USA
Interests: photonic materials and applications; magneto-optical materials and devices; fiber optics and sensors; single crystal fiber growth and applications; on-chip photonics; optical spectroscopy; plasmonics
Special Issues, Collections and Topics in MDPI journals
Dr. Khurram Naeem

E-Mail Website
Guest Editor
Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA 15261, USA
Interests: speciality optical fibers and photonic-crystal fibers; optical-fiber sensors; fiber lasers; fiber gratings (FBG/LPG); computational nanophotonics; application of ML/AI methods in optical sensing

Special Issue Information

Dear Colleagues,

Rapidly growing advancement in optoelectronic and photonics technology has not only diversified application areas of fiber-optic and photonic sensors but has also enabled the lowering of sensor manufacturing and interrogation costs, reducing the size, weight, and power consumption (SWaP), and also achieving unprecedented sensitivity, higher bandwidth, and a wider dynamic range in the measurand physical parameters of interest.

Optoelectronic sensor technology has benefitted from the development of long-haul optical fiber communication as light signals with encoded sensing information can be transported longer distances, enabling remote and distributed sensing capabilities. The availability of a multitude of sensing design architectures, a host of sensing materials over a broad electromagnetic spectrum, and a range of optoelectronics for signal processing to encode and decode the embedded information within the light in terms of its intensity, phase, polarization, frequency and wavelength shift have facilitated development in multiparameter sensing technology such as in acoustics/vibration, strain, temperature, pressure, gas, humidity, electric and magnetic fields, to name a few.

Manifold sensing has broadened the applications from structural health monitoring of infrastructure assets spanning civil, transportation, electrical, and gas to integrity monitoring of conventional (thermal and nuclear energy) and renewable generation systems, thanks to the immunity to electromagnetic interference and harsh environment (corrosive/high temperature/radiation) compatibility of the dielectric materials platform.  In the case of extreme temperature operational environments, ruggedized material engineering through single crystal fiber growth and modification of refractory materials such as sapphire and YAG has also been impactful.  The biocompatibility of optical materials and enhanced sensitivity and resolution is also making these sensors appealing to biomedical devices. The machine-learning-empowered optimized sensor design, advancement in CMOS-process-based thin sensing-film engineering, enhanced light–matter interaction via surface plasmons/polaritons and even nanostructured metamaterial schemes is pushing the limits of the performance metrics of optoelectronics sensors even further. Progress has also been made in integrating quantum sensing materials in the fiber-optic and photonics platforms.

This Special Issue is dedicated to the advances in optoelectronic sensors, whether pertaining to the advances in new sensing material engineering, implementation of novel physical concepts and optoelectronics for interrogation or optimization and novel design of the sensor architecture itself. Therefore, we welcome original research, review articles and short communication letters within the realm of point, quasi-distributed and fully distributed optoelectronics sensors for the sensing of various physical parameters in both fiber-optic and on-chip photonic waveguide platforms.

Dr. Paul R. Ohodnicki
Dr. Dolendra Karki
Dr. Khurram Naeem
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronic sensors
  • fiber-optic sensors
  • on-chip photonic sensors
  • point/quasi-distributed/distributed fiber-optic sensors
  • sensor design and integration
  • fiber-optic sensor fabrication
  • sensing materials engineering
  • strain/temperature/gas/pressure/pH/acoustics/vibration sensors
  • electric/magnetic field sensors and materials
  • quantum sensing
  • interferometry in optical waveguides
  • magneto-optics
  • electro-optics
  • plasmonics
  • optical metamaterials
  • optical thin films
  • UV-VIS-NIR spectroscopy
  • single crystal fibers growth and application
  • nuclear radiation sensors
  • fiber-optic sensor-based structural health monitoring

Published Papers (3 papers)

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Research

11 pages, 8364 KiB  
Communication
Modified Uni-Traveling-Carrier Photodetector with Its Optimized Cliff Layer
by Xiaowen Dong and Kai Liu
Sensors 2024, 24(7), 2020; https://doi.org/10.3390/s24072020 - 22 Mar 2024
Viewed by 485
Abstract
We have designed the MUTC-PD with an optimized thickness of cliff layer to pre-distort the electric field at the front side of the collection layer. With the optimized MUTC-PD design, the collapse of the electric field will be greatly suppressed, and the electrons [...] Read more.
We have designed the MUTC-PD with an optimized thickness of cliff layer to pre-distort the electric field at the front side of the collection layer. With the optimized MUTC-PD design, the collapse of the electric field will be greatly suppressed, and the electrons in its collection layer will gradually reach their peak velocity with the growing incident light power. Moreover, as the incident light intensity increases, the differential capacitance also declines, thus the total bandwidth grows. It will make the MUTC-PD achieve high-speed and high-power response performance simultaneously. Based on simulation, for 16μm MUTC-PD with a 70 nm cliff layer, the maximum 3 dB bandwidth at −5 V is 137 GHz, compared with 64 GHz for the MUTC-PD with a 30 nm cliff layer. The saturation RF output power is 27.4 dBm at 60 GHz. Full article
(This article belongs to the Special Issue Optoelectronic Sensors)
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9 pages, 2139 KiB  
Communication
Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process
by Tiancai Wang, Hongling Peng, Peng Cao, Qiandong Zhuang, Jie Deng, Jian Chen and Wanhua Zheng
Sensors 2024, 24(2), 640; https://doi.org/10.3390/s24020640 - 19 Jan 2024
Viewed by 598
Abstract
Since the avalanche phenomenon was first found in bulk materials, avalanche photodiodes (APDs) have been exclusively investigated. Among the many devices that have been developed, silicon APDs stand out because of their low cost, performance stability, and compatibility with CMOS. However, the increasing [...] Read more.
Since the avalanche phenomenon was first found in bulk materials, avalanche photodiodes (APDs) have been exclusively investigated. Among the many devices that have been developed, silicon APDs stand out because of their low cost, performance stability, and compatibility with CMOS. However, the increasing industrial needs pose challenges for the fabrication cycle time and fabrication cost. In this work, we proposed an improved fabrication process for ultra-deep mesa-structured silicon APDs for photodetection in the visible and near-infrared wavelengths with improved performance and reduced costs. The improved process reduced the complexity through significantly reduced photolithography steps, e.g., half of the steps of the existing process. Additionally, single ion implantation was performed under low energy (lower than 30 keV) to further reduce the fabrication costs. Based on the improved ultra-concise process, a deep-mesa silicon APD with a 140 V breakdown voltage was obtained. The device exhibited a low capacitance of 500 fF, the measured rise time was 2.7 ns, and the reverse bias voltage was 55 V. Moreover, a high responsivity of 103 A/W@870 nm at 120 V was achieved, as well as a low dark current of 1 nA at punch-through voltage and a maximum gain exceeding 1000. Full article
(This article belongs to the Special Issue Optoelectronic Sensors)
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13 pages, 4144 KiB  
Article
Ultraviolet Photodetector Based on a Beta-Gallium Oxide/Nickel Oxide/Beta-Gallium Oxide Heterojunction Structure
by Shinji Nakagomi
Sensors 2023, 23(19), 8332; https://doi.org/10.3390/s23198332 - 09 Oct 2023
Viewed by 959
Abstract
In this paper, an n–p–n structure based on a β-Ga2O3/NiO/β-Ga2O3 junction was fabricated. The device based on the β-Ga2O3/NiO/β-Ga2O3 structure, as an ultraviolet (UV) photodetector, was compared with a [...] Read more.
In this paper, an n–p–n structure based on a β-Ga2O3/NiO/β-Ga2O3 junction was fabricated. The device based on the β-Ga2O3/NiO/β-Ga2O3 structure, as an ultraviolet (UV) photodetector, was compared with a p–n diode based on a NiO/β-Ga2O3 structure, where it showed rectification and 10 times greater responsivity and amplified the photocurrent. The reverse current increased in proportion to the 1.5 power of UV light intensity. The photocurrent amplification was related to the accumulation of holes in the NiO layer given by the heterobarrier for holes from the NiO layer to the β-Ga2O3 layer. Moreover, the device could respond to an optical pulse of less than a few microseconds. Full article
(This article belongs to the Special Issue Optoelectronic Sensors)
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