Submit to Sensors Review for Sensors Propose a Special Issue

Journal Menu

Journal Browser

► Journal Browser

CMOS-MEMS/NEMS Devices and Sensors

Special Issue Editors
Special Issue Information
Keywords
Published Papers

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Physical Sensors".

Deadline for manuscript submissions: closed (15 April 2021) | Viewed by 18946

Share This Special Issue

Special Issue Editor

Dr. Ching-Liang Dai

E-Mail Website
Guest Editor

Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan
Interests: CMOS-MEMS; microsensors; microactuators
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Microelectromechanical system (MEMS)/nanoelectromechanical system (NEMS) devices fabricated using the complementary metal oxide semiconductor (CMOS) process are called CMOS-MEMS/NEMS devices. Several CMOS-MEMS/NEMS sensors and devices were developed and commercialized; examples include pressure sensors, accelerometers, gyroscopes, microphones, optical sensors, magnetic sensors, flow sensors, thermal sensors, image sensors, ink jet heads, and digital micro-mirror devices. Micro/nano devices developed by the CMOS-MEMS/NEMS technology have the potential for integration with integrated circuits (IC) on chip. The integrated devices with IC have the advantages of low interfence and high performance. Various sensing circuits and actuation circuits are essential for MEMS/NEMS devices. This Special Issue aims to collect high-quality research results on CMOS-MEMS/NEMS sensors and devices. Submissions related to novel designs, analysises, simulations, fabrications, packagings, developments and applications of various sensors, devices, and circuits, including CMOS circuits, energy harvesters, chemical sensors, gas sensors, humidity sensors, biosensors, biodevices, mechnical sensors, force sensors, optical sensors, magnetic sensors, thermal sensors, acoustic sensors, microphones, actuators, mirrors, switches, resonators, microchanels, microfludic devices and others, based on CMOS-MEMS/NEMS technology, are welcome. Review articles and original research articles are equally welcome.

Dr. Ching-Liang Dai
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

CMOS circuits for MEMS/NEMS devices
energy harvesters
chemical sensors
gas sensors
humidity sensors
biosensors
biodevices
mechnical sensors
force sensors
magnetic sensors
optical sensors
thermal sensors
flow sensors
acoustic sensors
microphones
actuators
mirrors
switches
resonators
microchanels
microfludic devices

Published Papers (7 papers)

Download All Papers

Order results

Result details

Show export options Show export options

Select all

Export citation of selected articles as:

Research

Jump to: Other

12 pages, 4124 KiB

Open AccessCommunication

Manufacturing and Testing of Radio Frequency MEMS Switches Using the Complementary Metal Oxide Semiconductor Process

by Zung-You Tsai, Po-Jen Shih, Yao-Chuan Tsai and Ching-Liang Dai

Sensors 2021, 21(4), 1396; https://doi.org/10.3390/s21041396 - 17 Feb 2021

Cited by 3 | Viewed by 2795

Abstract

A radio frequency microelectromechanical system switch (MSS) manufactured by the complementary metal oxide semiconductor (CMOS) process is presented. The MSS is a capacitive shunt type. Structure for the MSS consists of coplanar waveguide (CPW) lines, a membrane, and springs. The membrane locates over the CPW lines. The surface of signal line for the CPW has a silicon dioxide dielectric layer. The fabrication of the MSS contains a CMOS process and a post-process. The MSS has a sacrificial oxide layer after the CMOS process. In the post-processing, a wet etching of buffer oxide etch (BOE) etchant is employed to etch the sacrificial oxide layer, so that the membrane is released. Actuation voltage for the MSS is simulated using the CoventorWare software. The springs have a low stiffness, so that the actuation voltage reduces. The measured results reveal that actuation voltage for the MSS is 10 V. Insertion loss for the MSS is 0.9 dB at 41 GHz and isolation for the MSS is 30 dB at 41 GHz. Full article

(This article belongs to the Special Issue CMOS-MEMS/NEMS Devices and Sensors)

► Show Figures

Figure 1

22 pages, 8180 KiB

Open AccessArticle

A Thermopile Device with Sub-Wavelength Hole Arrays by CMOS-MEMS Technology

by Chi-Feng Chen, Chih-Hsiung Shen and Yun-Ying Yeh

Sensors 2021, 21(1), 180; https://doi.org/10.3390/s21010180 - 29 Dec 2020

Viewed by 2485

Abstract

A thermopile device with sub-wavelength hole array (SHA) is numerically and experimentally investigated. The infrared absorbance (IRA) effect of SHAs in active area of the thermopile device is clearly analyzed by the finite-difference time-domain (FDTD) method. The prototypes are manufactured by the 0.35 μm 2P4M complementary metal-oxide-semiconductor micro-electro-mechanical-systems (CMOS-MEMS) process in Taiwan semiconductor manufacturing company (TSMC). The measurement results of those prototypes are similar to their simulation results. Based on the simulation technology, more sub-wavelength hole structural effects for IRA of such thermopile device are discussed. It is found from simulation results that the results of SHAs arranged in a hexagonal shape are significantly better than the results of SHAs arranged in a square and the infrared absorption efficiencies (IAEs) of specific asymmetric rectangle and elliptical hole structure arrays are higher than the relatively symmetric square and circular hole structure arrays. The overall best results are respectively up to 3.532 and 3.573 times higher than that without sub-wavelength structure at the target temperature of 60 °C when the minimum structure line width limit of the process is ignored. Obviously, the IRA can be enhanced when the SHAs are considered in active area of the thermopile device and the structural optimization of the SHAs is absolutely necessary. Full article

(This article belongs to the Special Issue CMOS-MEMS/NEMS Devices and Sensors)

► Show Figures

Figure 1

16 pages, 6177 KiB

Open AccessArticle

Research on High-Resolution Miniaturized MEMS Accelerometer Interface ASIC

by Xiangyu Li, Yangong Zheng, Xiangyan Kong, Yupeng Liu and Danling Tang

Sensors 2020, 20(24), 7280; https://doi.org/10.3390/s20247280 - 18 Dec 2020

Cited by 3 | Viewed by 2954

Abstract

High-precision microelectromechanical system (MEMS) accelerometers have wide application in the military and civil fields. The closed-loop microaccelerometer interface circuit with switched capacitor topology has a high signal-to-noise ratio, wide bandwidth, good linearity, and easy implementation in complementary metal oxide semiconductor (CMOS) process. Aiming at the urgent need for high-precision MEMS accelerometers in geophones, we carried out relevant research on high-performance closed-loop application specific integrated circuit (ASIC) chips. According to the characteristics of the performance parameters and output signal of MEMS accelerometers used in geophones, a high-precision closed-loop interface ASIC chip based on electrostatic time-multiplexing feedback technology and proportion integration differentiation (PID) feedback control technology was designed and implemented. The interface circuit consisted of a low-noise charge-sensitive amplifier (CSA), a sampling and holding circuit, and a PID feedback circuit. We analyzed and optimized the noise characteristics of the interface circuit and used a capacitance compensation array method to eliminate misalignment of the sensitive element. The correlated double sampling (CDS) technology was used to eliminate low-frequency noise and offset of the interface circuit. The layout design and engineering batch chip were fabricated by a standard 0.35 μm CMOS process. The active area of the chip was 3.2 mm × 3 mm. We tested the performance of the accelerometer system with the following conditions: power dissipation of 7.7 mW with a 5 V power supply and noise density less than 0.5 μg/Hz^1/2. The accelerometers had a sensitivity of 1.2 V/g and an input range of ±1.2 g. The nonlinearity was 0.15%, and the bias instability was about 50 μg. Full article

(This article belongs to the Special Issue CMOS-MEMS/NEMS Devices and Sensors)

► Show Figures

Figure 1

20 pages, 8818 KiB

Open AccessArticle

A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation

by Josep Maria Sánchez-Chiva, Juan Valle, Daniel Fernández and Jordi Madrenas

Sensors 2020, 20(20), 5899; https://doi.org/10.3390/s20205899 - 19 Oct 2020

Cited by 4 | Viewed by 2956

Abstract

Lorentz-force Microelectromechanical Systems (MEMS) magnetometers have been proposed as a replacement for magnetometers currently used in consumer electronics market. Being MEMS devices, they can be manufactured in the same die as accelerometers and gyroscopes, greatly reducing current solutions volume and costs. However, they still present low sensitivities and large offsets that hinder their performance. In this article, a 2-axis out-of-plane, lateral field sensing, CMOS-MEMS magnetometer designed using the Back-End-Of-Line (BEOL) metal and oxide layers of a standard CMOS (Complementary Metal–Oxide–Semiconductor) process is proposed. As a result, its integration in the same die area, side-by-side, not only with other MEMS devices, but with the readout electronics is possible. A shielding structure is proposed that cancels out the offset frequently reported in this kind of sensors. Full-wafer device characterization has been performed, which provides valuable information on device yield and performance. The proposed device has a minimum yield of

85.7 %

with a good uniformity of the resonance frequency

\bar{f_{r}} = 56.8

kHz,

σ_{f_{r}} = 5.1

kHz and quality factor

\bar{Q} = 7.3

σ_{Q} = 1.6

at ambient pressure. Device sensitivity to magnetic field is

37.6

\cdot μ

^{- 1}

P = 1130

Pa when driven with

I = 1 {mA}_{pp}

. Full article

(This article belongs to the Special Issue CMOS-MEMS/NEMS Devices and Sensors)

► Show Figures

Figure 1

21 pages, 2710 KiB

Open AccessArticle

Current-Mode Self-Amplified CMOS Sensor Intended for 2D Temperature Microgradients Measurement and Imaging

by Patrick M. Santos, Davies W. L. Monteiro and Luciana P. Salles

Sensors 2020, 20(18), 5111; https://doi.org/10.3390/s20185111 - 08 Sep 2020

Cited by 3 | Viewed by 2645

Abstract

This paper presents the design of a current-mode CMOS self-amplified imager operating in dark conditions, for thermal imaging, which provides an innovative solution for precision thermal contact mapping. Possible applications of this imager range from 3D CMOS integrated circuits to the study of in-vivo biological samples. It can provide a thermal map, static or dynamic, for the measurement of temperature microgradients. Some adaptations are required for the optimization of this self-amplified image sensor since it responds exclusively to the dark currents of the photodiodes throughout the array. The sensor is designed in a standard CMOS process and requires no post-processing steps. The optimized image sensor operates with integration times as low as one

μ s

and can achieve both SNR and dynamic range compatible to those of sensors available on the market, estimated as

87 dB

and

75 dB

, respectively; noise equivalent temperature difference can be as low as

10 mK

; and detection errors as low as ±

1 %

. Furthermore, under optimal conditions the self-amplification process enables a simple form of CDS, enhancing the overall sensor noise performance. Full article

(This article belongs to the Special Issue CMOS-MEMS/NEMS Devices and Sensors)

► Show Figures

Figure 1

15 pages, 4828 KiB

Open AccessArticle

Impact of Fluid Flow on CMOS-MEMS Resonators Oriented to Gas Sensing

by Rafel Perello-Roig, Jaume Verd, Sebastià Bota and Jaume Segura

Sensors 2020, 20(17), 4663; https://doi.org/10.3390/s20174663 - 19 Aug 2020

Cited by 5 | Viewed by 2295

Abstract

Based on experimental data, this paper thoroughly investigates the impact of a gas fluid flow on the behavior of a MEMS resonator specifically oriented to gas sensing. It is demonstrated that the gas stream action itself modifies the device resonance frequency in a way that depends on the resonator clamp shape with a corresponding non-negligible impact on the gravimetric sensor resolution. Results indicate that such an effect must be accounted when designing MEMS resonators with potential applications in the detection of volatile organic compounds (VOCs). In addition, the impact of thermal perturbations was also investigated. Two types of four-anchored CMOS-MEMS plate resonators were designed and fabricated: one with straight anchors, while the other was sustained through folded flexure clamps. The mechanical structures were monolithically integrated together with an embedded readout amplifier to operate as a self-sustained fully integrated oscillator on a commercial CMOS technology, featuring low-cost batch production and easy integration. The folded flexure anchor resonator provided a flow impact reduction of 5× compared to the straight anchor resonator, while the temperature sensitivity was enhanced to −115 ppm/°C, an outstanding result compared to the −2403 ppm/°C measured for the straight anchored structure. Full article

(This article belongs to the Special Issue CMOS-MEMS/NEMS Devices and Sensors)

► Show Figures

Figure 1

Other

Jump to: Research

10 pages, 2990 KiB

Open AccessLetter

Enhanced Infrared Absorbance of the CMOS Compatible Thermopile by the Subwavelength Rectangular-Hole Arrays

by Chi-Feng Chen, Chih-Hsiung Shen and Yun-Ying Yeh

Sensors 2020, 20(11), 3218; https://doi.org/10.3390/s20113218 - 05 Jun 2020

Cited by 3 | Viewed by 1980

Abstract

The enhanced infrared absorbance (IRA) of the complementary metal-oxide-semiconductor (CMOS) compatible thermopile with the subwavelength rectangular-hole arrays in active area is investigated. The finite-difference time-domain (FDTD) method considered and analyzed the matrix arrangement (MA) and staggered arrangement (SA) of subwavelength rectangular-hole arrays (SRHA). For the better cases of MA-SRHA and SA-SRHA, the geometric parameters are the same and the infrared absorption efficiency (IAE) of the SA type is better than that of the MA type by about 19.4% at target temperature of 60 °C. Three proposed thermopiles with SA-SRHA are manufactured based on the 0.35 μm 2P4M CMOS-MEMS process. The measurement results are similar to the simulation results. The IAE of the best simulation case of SA-SRHA is up to 3.3 times higher than that without structure at the target temperature of 60 °C. Obviously, the staggered rectangular-hole arrays with more appropriate geometric conditions obtained from FDTD simulation can excellently enhance the IRA of the CMOS compatible thermopile. Full article

(This article belongs to the Special Issue CMOS-MEMS/NEMS Devices and Sensors)

► Show Figures

Journal Menu

Journal Browser

CMOS-MEMS/NEMS Devices and Sensors

Share This Special Issue

Special Issue Editor

Special Issue Information

Keywords

Published Papers (7 papers)

Research

Other

Further Information

Guidelines

MDPI Initiatives

Follow MDPI