Optoelectronic Functional Nanomaterials and Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 25 September 2024 | Viewed by 5583

Special Issue Editors


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School of Printing and Packaging Engineering, Beijing Institute of Graphic Communication, Beijing 102600, China
Interests: luminescence; imaging; power generation; solar energy
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National Center for Nanoscience and Technology, Beijing 100190, China
Interests: nanomaterials and nano photoelectric devices; field-induced electron emission properties of carbon-based nanomaterials; microfocus X-ray imaging
Special Issues, Collections and Topics in MDPI journals
Key Lab for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
Interests: optoelectronic devices
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Guest Editor
School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 101400, China
Interests: nanogenerator; blue energy; self-powered sensing
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Guest Editor
Beijing Key Laboratory for Sensors, Beijing Information Science & Technology University, Beijing, China
Interests: design, synthesis, and fabrication of environmentally friendly perovskites for highly efficient solar cells; 2D/3D halide perovskite
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Special Issue Information

Dear Colleagues,

Optoelectronic functional materials and devices have always been the main research direction in the fields of physics, chemistry, biology, engineering and manufacturing. This Special Issue mainly focuses on related work in the field of photoelectric research, such as luminescence, power generation, energy storage and conversion, imaging, metamaterials, and metastructures. Especially in recent years, the above-mentioned optoelectronic functional materials and devices have made significant progress in these fields, and the scientific and technological progress brought about by these devices and materials has evidently changed people's living habits. Significant work must still be carried out in these areas, and it is still necessary to delve into the essential factors and internal mechanisms of the devices that affect optoelectronic performance materials, and then to reveal the relationship between materials, structures and their properties. We expect continued advancement and cross-integration in these areas to continue to lead the way in optoelectronic theory and optoelectronic applications. The purpose of our Special Issue is mainly to build a platform for scholars who are committed to engaging in, and not limited to, the above research fields to share and exchange scientific research together.

Dr. Jigang Wang
Dr. Zhenjun Li
Dr. Meng Li
Prof. Dr. Tao Jiang
Prof. Dr. Junming Li
Guest Editors

Manuscript Submission Information

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Keywords

  • luminescence
  • photocatalysis
  • nanogenerators
  • lithium-ion batteries
  • photovoltaics
  • X-ray imaging
  • metamaterials
  • metastructures
  • plasma
  • sensors

Published Papers (4 papers)

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Research

13 pages, 6874 KiB  
Article
Design, Synthesis, and Characterization of a Novel Blue-Green Long Afterglow BaYAl3O7:Eu2+, Nd3+ Phosphor and Its Anti-Counterfeiting Application
by Jiao Wu, Quanxiao Liu, Peng Gao, Jigang Wang, Yuansheng Qi, Zhenjun Li, Junming Li and Tao Jiang
Nanomaterials 2023, 13(17), 2457; https://doi.org/10.3390/nano13172457 - 30 Aug 2023
Cited by 2 | Viewed by 1156
Abstract
Herein, a series of novel long afterglow nanophosphors BaYAl3O7:Eu2+, Nd3+ was synthesized by the combustion method. The investigation encompassed the characterization of X-ray diffraction, morphology, chemical valence, elemental composition, and photoluminescence behavior of BaYAl [...] Read more.
Herein, a series of novel long afterglow nanophosphors BaYAl3O7:Eu2+, Nd3+ was synthesized by the combustion method. The investigation encompassed the characterization of X-ray diffraction, morphology, chemical valence, elemental composition, and photoluminescence behavior of BaYAl3O7:Eu2+ and BaYAl3O7:Eu2+, Nd3+ nanoparticles. Under 365 nm excitation, BaYAl3O7:Eu2+ and BaYAl3O7:Eu2+, Nd3+ show emission bands centered at 497 nm and 492 nm, which are attributed to the 4f65d→4f7 transition of Eu2+ ions. The optimal samples of BaYAl3O7:0.03Eu2+ and BaYAl3O7:0.03Eu2+, 0.02Nd3+ have average fluorescence lifetimes of 850 ns and 1149 ns, respectively. The co-doping of Nd3+ ions as the trap centers produced long afterglow luminescence properties, and the afterglow time could reach up to 8 min. Furthermore, the fluorescent powder can be mixed with polyacrylic acid to prepare anti-counterfeiting inks; a clover pattern and snowflake pattern have been successfully printed using screen printing technology, proving its potential application in the field of anti-counterfeiting. Full article
(This article belongs to the Special Issue Optoelectronic Functional Nanomaterials and Devices)
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10 pages, 3398 KiB  
Communication
The Study on the Lasing Modes Modulated by the Dislocation Distribution in the GaN-Based Microrod Cavities
by Yuyin Li, Peng Chen, Xianfei Zhang, Ziwen Yan, Tong Xu, Zili Xie, Xiangqian Xiu, Dunjun Chen, Hong Zhao, Yi Shi, Rong Zhang and Youdou Zheng
Nanomaterials 2023, 13(15), 2228; https://doi.org/10.3390/nano13152228 - 01 Aug 2023
Viewed by 665
Abstract
Low-threshold lasing under pulsed optical pumping is demonstrated in GaN-based microrod cavities at room temperature, which are fabricated on the patterned sapphire substrates (PSS). Because the distribution of threading dislocations (TDs) is different at different locations, a confocal micro-photoluminescence spectroscopy (μ-PL) was performed [...] Read more.
Low-threshold lasing under pulsed optical pumping is demonstrated in GaN-based microrod cavities at room temperature, which are fabricated on the patterned sapphire substrates (PSS). Because the distribution of threading dislocations (TDs) is different at different locations, a confocal micro-photoluminescence spectroscopy (μ-PL) was performed to analyze the lasing properties of the different diameter microrods at the top of the triangle islands and between the triangle islands of the PSS substrates, respectively. The μ-PL results show that the 2 μm-diameter microrod cavity has a minimum threshold of about 0.3 kW/cm2. Whispering gallery modes (WGMs) in the microrod cavities are investigated by finite-difference time-domain simulation. Combined with the dislocation distribution in the GaN on the PSS substrates, it is found that the distribution of the strongest lasing WGMs always moves to the region with fewer TDs. This work reveals the connection between the lasing modes and the dislocation distribution, and can contribute to the development of low-threshold and high-efficiency GaN-based micro-lasers. Full article
(This article belongs to the Special Issue Optoelectronic Functional Nanomaterials and Devices)
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18 pages, 9469 KiB  
Article
Enhanced Fluorescence Characteristics of SrAl2O4: Eu2+, Dy3+ Phosphor by Co-Doping Gd3+ and Anti-Counterfeiting Application
by Peng Gao, Quanxiao Liu, Jiao Wu, Jun Jing, Wenguan Zhang, Junying Zhang, Tao Jiang, Jigang Wang, Yuansheng Qi and Zhenjun Li
Nanomaterials 2023, 13(14), 2034; https://doi.org/10.3390/nano13142034 - 09 Jul 2023
Cited by 1 | Viewed by 1625
Abstract
A series of long-afterglow luminescent materials (SrAl2O4: Eu2+ (SAOE), SrAl2O4: Eu2+, Dy3+ (SAOED) and SrAl2O4: Eu2+, Dy3+, Gd3+ (SAOEDG)) was synthesized via [...] Read more.
A series of long-afterglow luminescent materials (SrAl2O4: Eu2+ (SAOE), SrAl2O4: Eu2+, Dy3+ (SAOED) and SrAl2O4: Eu2+, Dy3+, Gd3+ (SAOEDG)) was synthesized via the combustion method. Temperature and concentration control experiments were conducted on these materials to determine the optimal reaction temperature and ion doping concentration for each sample. The crystal structure and luminescent properties were analyzed via X-ray diffraction (XRD), photoluminescence (PL), and afterglow attenuation curves. The outcomes demonstrate that the kind of crystal structure and the location of the emission peak were unaffected by the addition of ions. The addition of Eu2+ to the matrix’s lattice caused a broad green emission with a central wavelength of 508 nm, which was attributed to the characteristic 4f65d1 to 4f7 electronic dipole, which allowed the transition of Eu2+ ions. While acting as sensitizers, Dy3+ and Gd3+ could produce holes to create a trap energy level, which served as an electron trap center to catch some of the electrons produced by the excitation of Eu2+ but did not itself emit light. After excitation ceased, this allowed them to gently transition to the ground state to produce long-afterglow luminescence. It was observed that with the addition of sensitizer ions, the luminous intensity of the sample increased, and the afterglow duration lengthened. The elemental structure and valence states of the doped ions were determined with an X-ray photoelectron spectrometer (XPS). Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) were used to characterize the samples. The results show that the sample was synthesized successfully, and the type and content of ions in the fluorescent powder could be determined. The fluorescence lifetime, quantum yield, bandgap value, afterglow decay time, and coordinate position in the coherent infrared energy (CIE) diagram of the three best sample groups were then analyzed and compared. Combining the prepared phosphor with ink provides a new idea and method for the field of anti-counterfeiting through screen printing. Full article
(This article belongs to the Special Issue Optoelectronic Functional Nanomaterials and Devices)
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14 pages, 5939 KiB  
Article
The Local and Electronic Structure Study of LuxGd1−xVO4 (0 ≤ x ≤ 1) Solid Solution Nanocrystals
by Yang Chen, Ziqing Li, Nianjing Ji, Chenxi Wei, Xiulan Duan and Huaidong Jiang
Nanomaterials 2023, 13(2), 323; https://doi.org/10.3390/nano13020323 - 12 Jan 2023
Viewed by 1439
Abstract
Rare-earth-doped mixed crystals have demonstrated tunable optical properties, and it is of great importance to study the structural characteristics of the mixed-crystal hosts. Herein, LuxGd1-xVO4 (0 ≤ x ≤ 1) solid solution nanocrystals were synthesized by a [...] Read more.
Rare-earth-doped mixed crystals have demonstrated tunable optical properties, and it is of great importance to study the structural characteristics of the mixed-crystal hosts. Herein, LuxGd1-xVO4 (0 ≤ x ≤ 1) solid solution nanocrystals were synthesized by a modified sol–gel method, with a pure crystalline phase and element composition. The X-ray diffraction (XRD) and Rietveld refinement results showed that LuxGd1−xVO4 nanocrystals are continuous solid solutions with a tetragonal zircon phase (space group I41/amd) and the lattice parameters strictly follow Vegard’s law. The detailed local structures were studied by extended X-ray absorption fine structure (EXAFS) spectra, which revealed that the average bond length of Gd-O fluctuates and decreases, while the average bond length of Lu-O gradually decreases with the increase in Lu content. Furthermore, the binding energy differences of core levels indicate that the covalent V-O bond is relatively stable, while the ionicity of the Lu-O bond decreases with the increasing x value, and the ionicity of the Gd-O bond fluctuates with small amplitude. The valence band structures were further confirmed by the first-principles calculations, indicating that the valence band is contributed to by the O 2p nonbonding state, localized Gd 4f and Lu 4f states, and the hybridized states between the bonding O 2p and V 3d. The binding energies of the Lu core and the valence levels tend to decrease gradually with the increase in Lu content. This work provides insight into the structural features of mixed-crystal hosts, which have been developed in recent years to improve laser performance by providing different positions for active ions to obtain inhomogeneous broadening spectra. Full article
(This article belongs to the Special Issue Optoelectronic Functional Nanomaterials and Devices)
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