Optoelectronic Thin Films

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: 30 October 2024 | Viewed by 4103

Special Issue Editors

School of Printing and Packaging Engineering, Beijing Institute of Graphic Communication, Beijing 102600, China
Interests: luminescence; imaging; power generation; solar energy
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Beijing Key Laboratory for Sensors, Beijing Information Science & Technology University, Beijing, China
Interests: design, synthesis, and fabrication of environmentally friendly perovskites for highly efficient solar cells; 2D/3D halide perovskite
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National Center for Nanoscience and Technology, Beijing 100190, China
Interests: nanomaterials and nano photoelectric devices; field-induced electron emission properties of carbon-based nanomaterials; microfocus X-ray imaging
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School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 101400, China
Interests: nanogenerator; blue energy; self-powered sensing
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Key Lab for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
Interests: optoelectronic devices
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Special Issue Information

Dear Colleagues,

Optoelectronic functional thin films have always been the main research direction in the fields of physics, chemistry, biology, engineering, and manufacturing. This Special Issue mainly collects related work in the field of photoelectric research, such as luminescence, power generation, energy storage and conversion, imaging, metamaterials, and metastructures. Especially in recent years, the above-mentioned optoelectronic thin films have made significant progress in these fields, and the scientific as well as technological progress brought about by them have obviously changed people's living habits. There is still a lot of work to be performed in these areas, and it is still necessary to delve into the essential factors and internal mechanisms of devices that affect optoelectronic performance, after which the relationships between materials, structures, and properties can be revealed. We expect continued advancement and cross-integration in these areas in order to continue to lead the way in optoelectronic theory and optoelectronic applications. Our Special Issue mainly aims to build a platform for scholars who are committed to engaging in, but not limited to, the above research fields in order to share and exchange scientific research. We look forward to receiving your submissions!

Dr. Jigang Wang
Prof. Dr. Junming Li
Dr. Zhenjun Li
Prof. Dr. Tao Jiang
Dr. Meng Li
Guest Editors

Manuscript Submission Information

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Keywords

  • rare earth doped luminescence
  • quantum dot luminescence
  • aggregation luminescence
  • photocatalysis
  • friction luminescence
  • nanogenerators
  • lithium-ion batteries
  • photovoltaics
  • X-ray imaging
  • metamaterials
  • metastructures
  • plasma
  • sensors

Published Papers (3 papers)

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Research

9 pages, 2474 KiB  
Article
Polarization-Angle-Insensitive Dual-Band Perfect Metamaterial Absorbers in the Visible Region: A Theoretical Study
by Zhihui Xiong, Zhixi Li, Guangqiang He, Kecheng Su, Yien Huang and Guowei Deng
Coatings 2024, 14(2), 236; https://doi.org/10.3390/coatings14020236 - 18 Feb 2024
Viewed by 467
Abstract
Metamaterial absorbers have been studied extensively due to their potential applications in the field of photonics. In this paper, we propose a simulation study of a polarization-angle-insensitive dual-band perfect metamaterial absorber with absorption peaks at 654 and 781 nm, respectively. By adjusting the [...] Read more.
Metamaterial absorbers have been studied extensively due to their potential applications in the field of photonics. In this paper, we propose a simulation study of a polarization-angle-insensitive dual-band perfect metamaterial absorber with absorption peaks at 654 and 781 nm, respectively. By adjusting the structure parameters, dielectric thickness, and refractive index, the obtained absorber has high scalability in the visible wavelength region. To further understand the performance of the cross-structure absorber, analysis of its electric and magnetic field distribution shows that it produces two resonance modes leading to different absorption properties. In addition, the position and intensity of the absorption peaks were found to be unchanged with increasing incident polarization angle, indicating that the absorber is insensitive to the polarization of the incident light. The absorber has great flexibility and has good application potential in sensing and detection. Full article
(This article belongs to the Special Issue Optoelectronic Thin Films)
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17 pages, 6656 KiB  
Article
Eu2+-Activated Ba0.5Sr0.5Al2O4 Phosphors for Screen Printing and Anti-Counterfeiting Flexible Film
by Jiao Wu, Quanxiao Liu, Peng Gao, Jiaqi Hu, Meijuan Cao, Junying Zhang, Wei Chen, Jigang Wang, Yuansheng Qi and Zhenjun Li
Coatings 2023, 13(7), 1247; https://doi.org/10.3390/coatings13071247 - 14 Jul 2023
Viewed by 889
Abstract
Herein, a series of Ba0.5Sr0.5Al2O4: xEu2+ (x = 0.01, 0.02, 0.03, 0.04, 0.06) nanophosphors were synthesized by a combustion method. The investigation encompassed the characterization of the phase purity, morphology, elemental composition, [...] Read more.
Herein, a series of Ba0.5Sr0.5Al2O4: xEu2+ (x = 0.01, 0.02, 0.03, 0.04, 0.06) nanophosphors were synthesized by a combustion method. The investigation encompassed the characterization of the phase purity, morphology, elemental composition, and photoluminescence behavior of Ba0.5Sr0.5Al2O4: xEu2+ nanoparticles. Under excitation by 303 nm and 365 nm ultraviolet light, the nanoparticles exhibited blue-green emission arising from the 4f65d→4f7 transition of Eu2+ ions. The optimal doping concentration was determined to be 2%. Notably, the nanoparticles demonstrated fluorescence lifetimes and quantum yields of 1010 ns (λex = 303 nm), 112 ns (λex = 365 nm), 10.5%, and 10.3%, respectively. Additionally, a comprehensive analysis of the band structure and electronic density of states was conducted, revealing a theoretical direct band gap of 4.05 eV for the Ba0.5Sr0.5Al2O4 host. In addition, the prepared fluorescent powder can be used to prepare fluorescent flexible films. This film does not change the characteristic emission of Eu2+ ions and has more stable physicochemical properties, which may be more suitable for use in harsh environments. Also, the fluorescent powder can be blended with polyacrylic acid to form colorless anti-counterfeiting ink that can be applied to banknotes as an anti-counterfeiting mark. A clover pattern was successfully printed using screen-printing technology, proving its potential application in the field of anti-counterfeiting. Full article
(This article belongs to the Special Issue Optoelectronic Thin Films)
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17 pages, 19026 KiB  
Article
Preparation of SrAl2O4: Eu2+, Dy3+ Powder by Combustion Method and Application in Anticounterfeiting
by Peng Gao, Jigang Wang, Jiao Wu, Qingqing Xu, Lixue Yang, Quanxiao Liu, Yuansheng Qi and Zhenjun Li
Coatings 2023, 13(4), 808; https://doi.org/10.3390/coatings13040808 - 21 Apr 2023
Cited by 1 | Viewed by 2265
Abstract
Green emitting long afterglow phosphor SrAl2O4: Eu2+, Dy3+ was synthesized via the combustion method. The physical phase analysis was carried out by X-ray diffraction, the results show that the introduction of Eu2+ into the lattice [...] Read more.
Green emitting long afterglow phosphor SrAl2O4: Eu2+, Dy3+ was synthesized via the combustion method. The physical phase analysis was carried out by X-ray diffraction, the results show that the introduction of Eu2+ into the lattice of the matrix resulted in a broad green emission centered at 508 nm, which is ascribed to the characteristic 4f65d1 to 4f7 electronic dipole allowed transition of Eu2+ ions. The doping of Eu2+ and Dy3+ did not change the physical phase of the crystals. Dy3+, as a coactivator, does not emit light itself, but can generate holes to form a trap energy level, which acts as an electron trap center to capture some of the electrons generated by the excitation of Eu2+. After excitation has ceased, let them gradually to transfer to the ground state for long afterglow luminescence. Then, we investigate the optical characterizations of different samples excited by X-ray. We found that SrAl2O4: Eu2+, 0.5% Dy3+ has this higher luminous intensity and afterglow. Its fluorescence lifetime is about 720 ns, and its quantum yield can reach 15.18%. Through search engine marketing (SEM) and energy dispersive X-ray spectroscopy (EDX), it has been proved that the sample has been successfully synthesized and its component content has been confirmed. The Eg value calculated from the diffuse reflectance spectrum is 4.61eV. The prepared SrAl2O4: Eu2+, Dy3+ luminescent powder is combined with Polydimethylsiloxane substrate for anticounterfeiting application, which provides a novel idea and method for the development of the anticounterfeiting field. Full article
(This article belongs to the Special Issue Optoelectronic Thin Films)
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