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Special Issue "Preparation and Application of Nanowires II"
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".
Deadline for manuscript submissions: 30 September 2023 | Viewed by 1409
Special Issue Editor
2. Polytechnicheskaya 26, Russian Academy of Sciences, Ioffe Institute, 194021 St. Petersburg, Russia
Interests: growth modeling of semiconductor nanowires and related nanostructures; nucleation theory with applications
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
The first semiconductor microwires were grown in 1964 using the vapor–liquid–solid method. At the beginning of the 2000s, rapid development of semiconductor nanowires took place through the use of modern epitaxy techniques. This resulted in tremendous progress in their synthesis, characterization, and applications. One important advantage of nanowires is that they enable efficient relaxation of elastic stress, induced by lattice mismatch, thus enabling dislocation-free growth on dissimilar substrates (such as silicon for III–V nanowires) and in nanowire heterostructures. Semiconductor nanowires are now widely considered to be fundamental in nanoscience and nanotechnology. This Special Issue will share the latest achievements in and fundamental studies of the preparation and applications of nanowires in different material systems. Emphasis will be placed on synthesis methods for the fabrication of highly regular arrays of nanowires; ternary III–V nanowires and heterostructures based on them; morphological and crystal phase control in nanowires; advanced characterization techniques; fundamental studies of low-temperature transport; and nanowire applications in nanoelectronics and nanophotonics.
Prof. Dr. Vladimir Dubrovskii
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- semiconductor nanowires
- vapor–liquid–solid growth
- selective area growth
- ternary III–V nanowires
- nanowire heterostructures
- growth modeling
- optical and structural characterization
- crystal phase
- applications of nanowires
The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.
Title: Evolution of Cu-In catalyst nanoparticles under plasma treatment during silicon nanowire growth
Authors: Weixi Wang, Eric Ngo, Ileana Florea, Pavel Bulkin, Martin Foldyna, Pere Roca i Cabarrocas, Erik V. Johnson, and Jean-Luc Maurice
Affiliation: LPICM, École polytechnique, CNRS, Institut Polytechnique de Paris, Palaiseau, France
Abstract: We report silicon nanowire (SiNW) growth with a novel Cu-In bimetallic catalyst using a PECVD method. We study the structure of the catalyst nanoparticles (NPs) througout the SiNW growth process. Plasma treatment is responsible for crystallization and reactions of the Cu-In NPs: a hydrogen plasma pre-treatment at 200 °C induces the crystallization of the amorphous as-deposited NPs; a hydrogen-silane plasma at 416 °C during SiNW growth can induce a phase transformation to Cu7In3; while a hydrogen plasma treatment at 416 °C without SiH4 can lead to the formation of the Cu11In9 phase. The SiNWs synthesis with Cu-In bimetallic catalyst NPs has followed a VSS process. By adjusting the catalyst composition, we manage to obtain small-diameter SiNWs - below 10 nm, among which we observe the metastable hexagonal diamond phase of Si in TEM, which is predicted to have a direct bandgap.