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Micromachines
Special Issues
Oxide Semiconductors-Based Devices: Design, Fabrication, and Applications
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Oxide Semiconductors-Based Devices: Design, Fabrication, and Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: closed (28 February 2021) | Viewed by 13247

Special Issue Editors

Prof. Dr. Hyung Koun Cho

E-Mail Website
Guest Editor
School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2006 Seobu-ro, Jangan-gu, Gyeonggi-do, Suwon 16419, Republic of Korea
Interests: metal oxide; photoelectrochemical reaction; thin film transistor
Prof. Dr. Han-Ki Kim

E-Mail Website
Co-Guest Editor
School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2006 Seobu-ro, Jangan-gu, Gyeonggi-do, Suwon 16419, Republic of Korea
Interests: metal oxide; transparent conductive oxide; display device

Special Issue Information

Dear colleagues,

Metal oxide semiconductors are emerging materials focused on producing invisible electronics, opto-electronic devices, flash memory devices. Nowadays, we are additionally witnessing novel applications of oxide semiconductors in energy technologies, such as photoelectrochemical cells, photovolataic cells, piezoelectrics, and supercapacitors. Metal oxides with various metal components are a special class of semiconductors due to their attractive physical properties and chemical/electrical stability. The high carrier mobility, low temperature process, and transparency become possible to make challenging neuromorphic devices as well as transparent and flexible electronic circuits. Some oxide semiconductors with the high photoabsorbing characteristics represent an interesting route to convert solar energy into artificial fuels such as hydrogen, oxygen, carbon oxide, etc., and also reveal the possibility of transparent solar cells with moderate conversion efficiency. Consequently, this Special Issue aims to present a collection of articles and review papers covering the recent research and revolutionary development on electronics and energy storage/harvesting using oxide semiconductors. In particular, our main topics are involved with the synthesis of complex oxide materials and the development of new processes. All application fields using oxide semiconductors will be included.

Prof. Hyung Koun Cho
Prof. Dr. Han-Ki Kim
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • metal oxide semiconductor
  • amorphous oxide semiconductor
  • photoabsorbing oxide semiconductor
  • oxide thin film transistor
  • oxide memory material
  • new applications of oxide semiconductor
  • metal oxide synthesis
  • metal oxide design

Published Papers (4 papers)

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Research

15 pages, 1564 KiB  
Article
Damage Effect of ALD-Al2O3 Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation
by Man Ding
Micromachines 2021, 12(6), 661; https://doi.org/10.3390/mi12060661 - 04 Jun 2021
Cited by 5 | Viewed by 1922
Abstract
The radiation response of Al2O3 on silicon substrate under gamma-rays is studied in this article. The atomic layer deposited Al2O3 based metal-oxide-semiconductor structures were irradiated under gamma-ray with the total dose of 1.2 Mrad(Si)/2.5 Mrad(Si)/4 Mrad(Si). The [...] Read more.
The radiation response of Al2O3 on silicon substrate under gamma-rays is studied in this article. The atomic layer deposited Al2O3 based metal-oxide-semiconductor structures were irradiated under gamma-ray with the total dose of 1.2 Mrad(Si)/2.5 Mrad(Si)/4 Mrad(Si). The generation, transportation and trapping characteristics of radiation induced charges were studied by using electronic, physical and chemical methods. Firstly, the radiation induced trapped charge density in Al2O3 is up to 1012 cm−2, with the effective trapping efficiency of 7–20% under irradiation. Secondly, the leakage current through Al2O3 changes little with the increase of radiation total dose. Thirdly, oxygen vacancy in Al2O3 and O dangling bonds and Al-Si metallic bonds at Al2O3/Si interface are dominant radiation induced defects in Al2O3/Si system, and the valence band offset between Al2O3 and Si is found to decrease after irradiation. From the results we can see that Al2O3 is radiation resistant from the aspect of leakage current and crystallization characteristics, but the radiation induced charge trapping and new defects in Al2O3/Si structure cannot be ignored. This paper provides a reference for the space application of Al2O3 based MOS devices. Full article
(This article belongs to the Special Issue Oxide Semiconductors-Based Devices: Design, Fabrication, and Applications)
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11 pages, 2262 KiB  
Article
Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu2O Photocathodes
by Hak Hyeon Lee, Dong Su Kim, Ji Hoon Choi, Young Been Kim, Sung Hyeon Jung, Swagotom Sarker, Nishad G. Deshpande, Hee Won Suh and Hyung Koun Cho
Micromachines 2021, 12(3), 338; https://doi.org/10.3390/mi12030338 - 22 Mar 2021
Cited by 5 | Viewed by 2654
Abstract
An effective strategy for improving the charge transport efficiency of p-type Cu2O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the [...] Read more.
An effective strategy for improving the charge transport efficiency of p-type Cu2O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the built-in potential at the Cu2O/AZO interface as well as an excellent conformal coating with a thin thickness on irregular Cu2O. Considering the thin thickness of the AZO overlayers, it is expected that the composition of the Al and the layer stacking sequence in the ALD process will significantly influence the charge transport behavior and the photoelectrochemical (PEC) performance. We designed various stacking orders of AZO overlayers where the stacking layers consisted of Al2O3 (or Al) and ZnO using the atomically controlled ALD process. Al doping in ZnO results in a wide bandgap and does not degrade the absorption efficiency of Cu2O. The best PEC performance was obtained for the sample with an AZO overlayer containing conductive Al layers in the bottom and top regions. The Cu2O/AZO/TiO2/Pt photoelectrode with this overlayer exhibits an open circuit potential of 0.63 V and maintains a high cathodic photocurrent value of approximately −3.2 mA cm−2 at 0 VRHE for over 100 min. Full article
(This article belongs to the Special Issue Oxide Semiconductors-Based Devices: Design, Fabrication, and Applications)
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11 pages, 2821 KiB  
Article
Transparent and Flexible SiOC Films on Colorless Polyimide Substrate for Flexible Cover Window
by Jin-Hyeok Park, Chan-Hwi Kim, Ju-Hyeon Lee and Han-Ki Kim
Micromachines 2021, 12(3), 233; https://doi.org/10.3390/mi12030233 - 25 Feb 2021
Cited by 14 | Viewed by 4427
Abstract
We fabricated transparent and flexible silicon oxycarbide (SiOC) hard coating (HC) films on a colorless polyimide substrate to use as cover window films for flexible and foldable displays using a reactive roll-to-roll (R2R) sputtering system at room temperature. At a SiOC thickness of [...] Read more.
We fabricated transparent and flexible silicon oxycarbide (SiOC) hard coating (HC) films on a colorless polyimide substrate to use as cover window films for flexible and foldable displays using a reactive roll-to-roll (R2R) sputtering system at room temperature. At a SiOC thickness of 100 nm, the R2R-sputtered SiOC film showed a high optical transmittance of 87.43% at a visible range of 400 to 800 nm. The R2R-sputtered SiOC films also demonstrated outstanding flexibility, which is a key requirement of foldable and flexible displays. There were no cracks or surface defects on the SiOC films, even after bending (static folding), folding (dynamic folding), twisting, and rolling tests. Furthermore, the R2R-sputtered SiOC film showed good scratch resistance in a pencil hardness test (550 g) and steel wool test under a load of 250 g. To test the impact protection ability, we compared the performance of thin-film heaters (TFHs) and oxide-semiconductor-based thin-film transistors (TFTs) with and without SiOC cover films. The similar performance of the TFHs and TFTs with the SiOC cover window films demonstrate that the R2R-sputtered SiOC films offer promising cover window films for the next generation of flexible or foldable displays. Full article
(This article belongs to the Special Issue Oxide Semiconductors-Based Devices: Design, Fabrication, and Applications)
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14 pages, 4307 KiB  
Article
Tri-Doping of Sol–Gel Synthesized Garnet-Type Oxide Solid-State Electrolyte
by Minji Kim, Gwanhyeon Kim and Heechul Lee
Micromachines 2021, 12(2), 134; https://doi.org/10.3390/mi12020134 - 27 Jan 2021
Cited by 11 | Viewed by 3491
Abstract
The rapidly growing Li-ion battery market has generated considerable demand for Li-ion batteries with improved performance and stability. All-solid-state Li-ion batteries offer promising safety and manufacturing enhancements. Herein, we examine the effect of substitutional doping at three cation sites in garnet-type Li7 [...] Read more.
The rapidly growing Li-ion battery market has generated considerable demand for Li-ion batteries with improved performance and stability. All-solid-state Li-ion batteries offer promising safety and manufacturing enhancements. Herein, we examine the effect of substitutional doping at three cation sites in garnet-type Li7La3Zr2O12 (LLZO) oxide ceramics produced by a sol–gel synthesis technique with the aim of enhancing the properties of solid-state electrolytes for use in all-solid-state Li-ion batteries. Building on the results of mono-doping experiments with different doping elements and sites—Al, Ga, and Ge at the Li+ site; Rb at the La3+ site; and Ta and Nb at the Zr4+ site—we designed co-doped (Ga, Al, or Rb with Nb) and tri-doped (Ga or Al with Rb and Nb) samples by compositional optimization, and achieved a LLZO ceramic with a pure cubic phase, almost no secondary phase, uniform grain structure, and excellent Li-ion conductivity. The findings extend the current literature on the doping of LLZO ceramics and highlight the potential of the sol–gel method for the production of solid-state electrolytes. Full article
(This article belongs to the Special Issue Oxide Semiconductors-Based Devices: Design, Fabrication, and Applications)
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