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Special Issue "Oxide Semiconductors-Based Devices: Design, Fabrication, and Applications"

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A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: closed (28 February 2021) | Viewed by 11460

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Prof. Dr. Hyung Koun Cho

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Guest Editor

School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2006 Seobu-ro, Jangan-gu, Gyeonggi-do, Suwon 16419, Republic of Korea
Interests: metal oxide; photoelectrochemical reaction; thin film transistor

Prof. Dr. Han-Ki Kim

E-Mail Website
Co-Guest Editor

Special Issue Information

Dear colleagues,

Metal oxide semiconductors are emerging materials focused on producing invisible electronics, opto-electronic devices, flash memory devices. Nowadays, we are additionally witnessing novel applications of oxide semiconductors in energy technologies, such as photoelectrochemical cells, photovolataic cells, piezoelectrics, and supercapacitors. Metal oxides with various metal components are a special class of semiconductors due to their attractive physical properties and chemical/electrical stability. The high carrier mobility, low temperature process, and transparency become possible to make challenging neuromorphic devices as well as transparent and flexible electronic circuits. Some oxide semiconductors with the high photoabsorbing characteristics represent an interesting route to convert solar energy into artificial fuels such as hydrogen, oxygen, carbon oxide, etc., and also reveal the possibility of transparent solar cells with moderate conversion efficiency. Consequently, this Special Issue aims to present a collection of articles and review papers covering the recent research and revolutionary development on electronics and energy storage/harvesting using oxide semiconductors. In particular, our main topics are involved with the synthesis of complex oxide materials and the development of new processes. All application fields using oxide semiconductors will be included.

Prof. Hyung Koun Cho
Prof. Dr. Han-Ki Kim
Guest Editors

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Keywords

metal oxide semiconductor
amorphous oxide semiconductor
photoabsorbing oxide semiconductor
oxide thin film transistor
oxide memory material
new applications of oxide semiconductor
metal oxide synthesis
metal oxide design

Published Papers (4 papers)

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15 pages, 1564 KiB

Open AccessArticle

Damage Effect of ALD-Al₂O₃ Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation

Man Ding

Micromachines 2021, 12(6), 661; https://doi.org/10.3390/mi12060661 - 04 Jun 2021

Cited by 3 | Viewed by 1685

Abstract

The radiation response of Al₂O₃ on silicon substrate under gamma-rays is studied in this article. The atomic layer deposited Al₂O₃ based metal-oxide-semiconductor structures were irradiated under gamma-ray with the total dose of 1.2 Mrad(Si)/2.5 Mrad(Si)/4 Mrad(Si). The generation, transportation and trapping characteristics of radiation induced charges were studied by using electronic, physical and chemical methods. Firstly, the radiation induced trapped charge density in Al₂O₃ is up to 10¹² cm⁻², with the effective trapping efficiency of 7–20% under irradiation. Secondly, the leakage current through Al₂O₃ changes little with the increase of radiation total dose. Thirdly, oxygen vacancy in Al₂O₃ and O dangling bonds and Al-Si metallic bonds at Al₂O₃/Si interface are dominant radiation induced defects in Al₂O₃/Si system, and the valence band offset between Al₂O₃ and Si is found to decrease after irradiation. From the results we can see that Al₂O₃ is radiation resistant from the aspect of leakage current and crystallization characteristics, but the radiation induced charge trapping and new defects in Al₂O₃/Si structure cannot be ignored. This paper provides a reference for the space application of Al₂O₃ based MOS devices. Full article

(This article belongs to the Special Issue Oxide Semiconductors-Based Devices: Design, Fabrication, and Applications)

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11 pages, 2262 KiB

Open AccessArticle

Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu₂O Photocathodes

and

Micromachines 2021, 12(3), 338; https://doi.org/10.3390/mi12030338 - 22 Mar 2021

Cited by 3 | Viewed by 2316

Abstract

An effective strategy for improving the charge transport efficiency of p-type Cu₂O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the built-in potential at the Cu₂O/AZO interface as well as an excellent conformal coating with a thin thickness on irregular Cu₂O. Considering the thin thickness of the AZO overlayers, it is expected that the composition of the Al and the layer stacking sequence in the ALD process will significantly influence the charge transport behavior and the photoelectrochemical (PEC) performance. We designed various stacking orders of AZO overlayers where the stacking layers consisted of Al₂O₃ (or Al) and ZnO using the atomically controlled ALD process. Al doping in ZnO results in a wide bandgap and does not degrade the absorption efficiency of Cu₂O. The best PEC performance was obtained for the sample with an AZO overlayer containing conductive Al layers in the bottom and top regions. The Cu₂O/AZO/TiO₂/Pt photoelectrode with this overlayer exhibits an open circuit potential of 0.63 V and maintains a high cathodic photocurrent value of approximately −3.2 mA cm⁻² at 0 V_RHE for over 100 min. Full article

(This article belongs to the Special Issue Oxide Semiconductors-Based Devices: Design, Fabrication, and Applications)

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11 pages, 2821 KiB

Open AccessArticle

Transparent and Flexible SiOC Films on Colorless Polyimide Substrate for Flexible Cover Window

and

Micromachines 2021, 12(3), 233; https://doi.org/10.3390/mi12030233 - 25 Feb 2021

Cited by 12 | Viewed by 3675

Abstract

We fabricated transparent and flexible silicon oxycarbide (SiOC) hard coating (HC) films on a colorless polyimide substrate to use as cover window films for flexible and foldable displays using a reactive roll-to-roll (R2R) sputtering system at room temperature. At a SiOC thickness of 100 nm, the R2R-sputtered SiOC film showed a high optical transmittance of 87.43% at a visible range of 400 to 800 nm. The R2R-sputtered SiOC films also demonstrated outstanding flexibility, which is a key requirement of foldable and flexible displays. There were no cracks or surface defects on the SiOC films, even after bending (static folding), folding (dynamic folding), twisting, and rolling tests. Furthermore, the R2R-sputtered SiOC film showed good scratch resistance in a pencil hardness test (550 g) and steel wool test under a load of 250 g. To test the impact protection ability, we compared the performance of thin-film heaters (TFHs) and oxide-semiconductor-based thin-film transistors (TFTs) with and without SiOC cover films. The similar performance of the TFHs and TFTs with the SiOC cover window films demonstrate that the R2R-sputtered SiOC films offer promising cover window films for the next generation of flexible or foldable displays. Full article

(This article belongs to the Special Issue Oxide Semiconductors-Based Devices: Design, Fabrication, and Applications)

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14 pages, 4307 KiB

Open AccessArticle

Tri-Doping of Sol–Gel Synthesized Garnet-Type Oxide Solid-State Electrolyte

Minji Kim

Gwanhyeon Kim

and

Heechul Lee

Micromachines 2021, 12(2), 134; https://doi.org/10.3390/mi12020134 - 27 Jan 2021

Cited by 7 | Viewed by 3080

Abstract

The rapidly growing Li-ion battery market has generated considerable demand for Li-ion batteries with improved performance and stability. All-solid-state Li-ion batteries offer promising safety and manufacturing enhancements. Herein, we examine the effect of substitutional doping at three cation sites in garnet-type Li₇La₃Zr₂O₁₂ (LLZO) oxide ceramics produced by a sol–gel synthesis technique with the aim of enhancing the properties of solid-state electrolytes for use in all-solid-state Li-ion batteries. Building on the results of mono-doping experiments with different doping elements and sites—Al, Ga, and Ge at the Li⁺ site; Rb at the La³⁺ site; and Ta and Nb at the Zr⁴⁺ site—we designed co-doped (Ga, Al, or Rb with Nb) and tri-doped (Ga or Al with Rb and Nb) samples by compositional optimization, and achieved a LLZO ceramic with a pure cubic phase, almost no secondary phase, uniform grain structure, and excellent Li-ion conductivity. The findings extend the current literature on the doping of LLZO ceramics and highlight the potential of the sol–gel method for the production of solid-state electrolytes. Full article

(This article belongs to the Special Issue Oxide Semiconductors-Based Devices: Design, Fabrication, and Applications)

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