Special Issue "Oxide Semiconductors-Based Devices: Design, Fabrication, and Applications"
Deadline for manuscript submissions: closed (28 February 2021) | Viewed by 11460
Interests: metal oxide; photoelectrochemical reaction; thin film transistor
Metal oxide semiconductors are emerging materials focused on producing invisible electronics, opto-electronic devices, flash memory devices. Nowadays, we are additionally witnessing novel applications of oxide semiconductors in energy technologies, such as photoelectrochemical cells, photovolataic cells, piezoelectrics, and supercapacitors. Metal oxides with various metal components are a special class of semiconductors due to their attractive physical properties and chemical/electrical stability. The high carrier mobility, low temperature process, and transparency become possible to make challenging neuromorphic devices as well as transparent and flexible electronic circuits. Some oxide semiconductors with the high photoabsorbing characteristics represent an interesting route to convert solar energy into artificial fuels such as hydrogen, oxygen, carbon oxide, etc., and also reveal the possibility of transparent solar cells with moderate conversion efficiency. Consequently, this Special Issue aims to present a collection of articles and review papers covering the recent research and revolutionary development on electronics and energy storage/harvesting using oxide semiconductors. In particular, our main topics are involved with the synthesis of complex oxide materials and the development of new processes. All application fields using oxide semiconductors will be included.
Prof. Hyung Koun Cho
Prof. Dr. Han-Ki Kim
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- metal oxide semiconductor
- amorphous oxide semiconductor
- photoabsorbing oxide semiconductor
- oxide thin film transistor
- oxide memory material
- new applications of oxide semiconductor
- metal oxide synthesis
- metal oxide design