SiC Based Miniaturized Devices, Volume II

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D:Materials and Processing".

Deadline for manuscript submissions: closed (30 June 2021) | Viewed by 11798

Special Issue Editors


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University of Tours GREMAN (UMR-CNRS 7347), 16 rue Pierre et Marie CURIE, BP 7155, CEDEX 2, 37071 TOURS, France
Interests: wide band gap (SiC and GaN); power devices; MEMS; NEMS; material processing; doping

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Department of Electrical Engineering, University of South Florida, 4202 East Fowler Avenue, ENB118 Tampa, FL 33620, USA
Interests: advanced manufacturing; MEMS/NEMS transducers; nanomaterials and nanotechnology; microfluidics and biosensors; RF/microwave electronics
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Universidade Federal de São Paulo (UNIFESP) Rua Talim 330, São José dos Campos - SP, 12231-280, Brazil
Interests: materials science; energy; microelectronics; aerospace engineering; biomedical engineering and bioengineering
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

MEMS devices are found in many of today’s electronic devices and systems, from airbag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC) is a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue, we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense.

Prof. Dr. Stephen Edward Saddow
Prof. Dr. Daniel Alquier
Prof. Dr. Jing Wang
Prof. Dr. Francesco La Via
Dr. Mariana Fraga
Guest Editors

Manuscript Submission Information

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Keywords

  • SiC microsystems
  • SiC MEMS
  • SiC biomedical devices
  • SiC micromachines
  • SiC microsensors

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Published Papers (3 papers)

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Research

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15 pages, 8163 KiB  
Article
Measurement of Residual Stress and Young’s Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon
by Sergio Sapienza, Matteo Ferri, Luca Belsito, Diego Marini, Marcin Zielinski, Francesco La Via and Alberto Roncaglia
Micromachines 2021, 12(9), 1072; https://doi.org/10.3390/mi12091072 - 03 Sep 2021
Cited by 11 | Viewed by 2785
Abstract
3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (high Young’s modulus and low density) that allow the device to be operated for a given geometry at higher frequency. The mechanical properties of this material depend strongly on [...] Read more.
3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (high Young’s modulus and low density) that allow the device to be operated for a given geometry at higher frequency. The mechanical properties of this material depend strongly on the material quality, the defect density, and the stress. For this reason, the use of SiC in Si-based microelectromechanical system (MEMS) fabrication techniques has been very limited. In this work, the complete characterization of Young’s modulus and residual stress of monocrystalline 3C-SiC layers with different doping types grown on <100> and <111> oriented silicon substrates is reported, using a combination of resonance frequency of double clamped beams and strain gauge. In this way, both the residual stress and the residual strain can be measured independently, and Young’s modulus can be obtained by Hooke’s law. From these measurements, it has been observed that Young’s modulus depends on the thickness of the layer, the orientation, the doping, and the stress. Very good values of Young’s modulus were obtained in this work, even for very thin layers (thinner than 1 μm), and this can give the opportunity to realize very sensitive strain sensors. Full article
(This article belongs to the Special Issue SiC Based Miniaturized Devices, Volume II)
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9 pages, 3093 KiB  
Article
A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region
by Hujun Jia, Mengyu Dong, Xiaowei Wang, Shunwei Zhu and Yintang Yang
Micromachines 2021, 12(5), 488; https://doi.org/10.3390/mi12050488 - 26 Apr 2021
Cited by 4 | Viewed by 1444
Abstract
A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, [...] Read more.
A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure. Full article
(This article belongs to the Special Issue SiC Based Miniaturized Devices, Volume II)
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Review

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23 pages, 2405 KiB  
Review
Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS
by Mariana Fraga and Rodrigo Pessoa
Micromachines 2020, 11(9), 799; https://doi.org/10.3390/mi11090799 - 24 Aug 2020
Cited by 37 | Viewed by 6754
Abstract
A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent [...] Read more.
A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology. Full article
(This article belongs to the Special Issue SiC Based Miniaturized Devices, Volume II)
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