Wide Bandgap Based Devices: Design, Fabrication and Applications, 4th Edition
Deadline for manuscript submissions: 15 March 2024 | Viewed by 1832
Wide-bandgap (WBG) semiconductor materials have become a key driver in the development of electronic devices, driving innovation in multiple areas. The WBG semiconductor materials mainly include SiC, GaN, AlN, AlGaN, BN and Ga2O3. Among them, SiC and GaN perform well in power electronics, their high electron mobility and electron saturation drift speed making them ideal for power-switching devices with high energy efficiency and high-power density. At the same time, GaN and indium InGaN and other wide-bandgap semiconductors have also changed traditional lighting technology. For example, GaN LEDs have high light efficiency, long life and high color temperature characteristics. By carefully designing the band of the semiconductor structure, it is possible to control the color of the light emitted for high-efficiency lighting systems and display devices. Current research into AlN, especially AlGaN, is focused on improving growth techniques to obtain higher-quality films, as well as on optimizing device structures for high-frequency power-switching devices, such as high-voltage converters, motor control, power inverters and so on. These devices have higher efficiency and lower switching losses, which help to improve energy conversion efficiency and reduce power loss.
BN, a WBG semiconductor material, has extremely high thermal conductivity and can be used for heat dissipation in high-power systems to improve performance and reliability. Additionally, BN is interested in ultraviolet (UV) and deep-ultraviolet (DUV) LEDs, while Ga2O3 is also useful in photodetectors and laser diodes (LDs). BN is represented in various forms, such as nanosheets, nanotubes, nanoribbons and twins, making it promising for the new generation of devices. In summary, the current wide-bandgap semiconductors are based on basic material research, application property research, architecture technology and device architecture design. This Special Issue will focus on the following topics:
- Boron nitride polymorphic (thin films, tubes and bands) growth for electronic devices;
- Mid-infrared optical devices based on WBG;
- Ga2O3 thin films for photodetectors and LD;
- Exploration of group III-V semiconductors in quantum information, high-energy physics experiments, satellite communications and medical devices;
- Characteristics and application exploration of multi-form and multi-dimensional wide-bandgap semiconductors.
Prof. Dr. Ling Li
Manuscript Submission Information
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- wide-bandgap (WBG) devices
- deep UV devices
- mid-infrared devices
- power devices
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