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Micromachines
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Gallium Nitride-Based Devices, 2nd Edition
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Gallium Nitride-Based Devices, 2nd Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 25 June 2024 | Viewed by 1154

Special Issue Editor

Dr. Neha Aggarwal

E-Mail Website
Guest Editor
Paul-Drude-Institut für Festkörperelektronik, Hausvogteipl. 5-7, 10117 Berlin, Germany
Interests: Gallium Nitride; Aluminium Nitride; AlGaN; Boron Nitride; nanoplasmonics; molecular beam epitaxy of III-Nitride material system; optoelectronics; device fabrication; photodetectors
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The escalating demand for high-frequency and high-power operations in power conversion systems is leading the way towards the development of a material that should be able to out-perform conventional Si-based components. Gallium nitride (GaN) is a III-V group compound that is being merged with pre-existing silicon-based semiconductor technology to speed up its accessibility to large-scale users. The use of GaN-based devices has been growing rapidly, and these devices have already shown marked importance in solid-state lighting applications due to providing high power and high speed, especially in the ultraviolet (UV) range due to their wide- and direct-bandgap properties. With the increasing need to save energy, GaN is an important semiconductor material that possesses the capability to increase technological requirements quite efficiently. The different polarity/orientations of GaN have resulted in a debate regarding its device applicability. Presently, non-polar GaN-based structures are demonstrating higher efficiencies and a faster switching response in UV optoelectronic devices. However, in polar GaN, N-polar portrays the key characteristics of an efficient photodetection device over Ga-polar devices. More recently, atomically thin GaN has emerged and is potentially suitable for ultracompact electronics and optics. This freshly synthesized two-dimensional (2D) GaN allows for control over light-emitting properties guided by strong quantum confinement. Moreover, 2D GaN materials can also act as possible electrode materials for batteries since they have a very low mass density and are definitely an environmentally friendly alternative that can provide high-storage capacities. This Special Issue creates an opportunity for researchers who are willing to contribute to all of these latest material developments and process advancements in GaN technology in the form of research papers, short communications, and perspectives, as well as review articles.

We are looking forward to receiving your submissions!

Dr. Neha Aggarwal
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • epitaxial growth
  • electronic transport
  • gallium nitride
  • non-polar GaN
  • nanostructures
  • optoelectronics
  • polarity
  • radiation resistant
  • strain-free growth
  • semiconductor device technology
  • UV technology
  • wide-bandgap
  • 2D semiconductors

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Published Papers (1 paper)

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Research

15 pages, 7547 KiB  
Article
Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study
by Woo-Seok Kang, Jun-Hyeok Choi, Dohyung Kim, Ji-Hun Kim, Jun-Ho Lee, Byoung-Gue Min, Dong Min Kang, Jung Han Choi and Hyun-Seok Kim
Micromachines 2024, 15(1), 57; https://doi.org/10.3390/mi15010057 - 27 Dec 2023
Viewed by 916
Abstract
In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of [...] Read more.
In this study, we propose an optimized AlGaN/GaN high-electron-mobility transistor (HEMT) with a considerably improved breakdown voltage. First, we matched the simulated data obtained from a basic T-gate HEMT with the measured data obtained from the fabricated device to ensure the reliability of the simulation. Thereafter, to improve the breakdown voltage, we suggested applying a gate-head extended structure. The gate-head-top and gate-head-bottom lengths of the basic T-gate HEMT were symmetrically extended by 0.2 μm steps up to 1.0 μm. The breakdown voltage of the 1.0 μm extended structure was 52% higher than that of the basic T-gate HEMT. However, the cutoff frequency (fT) and maximum frequency (fmax) degraded. To minimize the degradation of fT and fmax, we additionally introduced a gate-recessed structure to the 1.0 μm gate-head extended HEMT. The thickness of the 25 nm AlGaN barrier layer was thinned down to 13 nm in 3 nm steps, and the highest fT and fmax were obtained at a 6 nm recessed structure. The fT and fmax of the gate-recessed structure improved by 9% and 28%, respectively, with respect to those of the non-gate-recessed structure, and further improvement of the breakdown voltage by 35% was observed. Consequently, considering the trade-off relationship between the DC and RF characteristics, the 1.0 μm gate-head extended HEMT with the 6 nm gate-recessed structure was found to be the optimized AlGaN/GaN HEMT for high-power operations. Full article
(This article belongs to the Special Issue Gallium Nitride-Based Devices, 2nd Edition)
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