Memristive Devices & Thin-Film Transistors: Design, Fabrication and Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: closed (31 March 2023) | Viewed by 6405

Special Issue Editors


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Guest Editor
Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lis-boa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
Interests: IoT-memristor; thin film transistor; oxide electronic; paper electronic
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Guest Editor
i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade Nova de Lisboa, 2829-516 Caparica, Portugal
Interests: solution-based (sol-gel and combustion) metal oxides thin films; high-κ dielectrics; thin film transistors; resistive switching devices; printed electronics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Currently, we are in the era of the fourth industrial revolution (Industry 4.0), in which fast changes in technologies related to novel processing paradigms are in high demand due to the exponential growth of data and smart devices within the concept of the Internet of Things (IoT). The problem with the current computation system is not in fact the processing, but rather the high-energy data traveling between the memory and central processing units. Through completely different approaches instead of continuing the use of Von Neumann systems, however, power consumption can be reduced several orders of magnitude below the current digital stored-program machines. Therefore, memory-centric computation and brain-inspired neuromorphic architectures are the most prominent, requiring further investigation. In this respect, neuromorphic computation based on memristors offers an emergent artificial neural network (ANN) able to perform in-memory computation with adaptive learning algorithms on hardware.

Memristors can simulate a variety of synaptic properties, such as potentiation, depression and spike-time-dependent plasticity (STDP), which are key features of artificial neural networks (ANNs) and spiking neural networks (SNNs).

In this respect, for the application of system-on-panel (SoP) and the Internet of Things (IoT) on flexible substrates, the adoption of new technologies requires further exploration, which is the focusing topic of this Special Issue, especially in which the implementation of memristive devices and the eventual integration with thin-film transistors (TFTs), based on the same material/technique for electronic support, significantly reduce manufacturing costs and efforts and allow for an easy system implementation with less various technology interfacing.

We invite researchers and scientists to showcase their work in this Special Issue with research papers and review articles focusing on trends in memristors, thin-film transistors, diodes and integration strategies, modelling and simulation, from fundamental research to applications.

Dr. Asal Kiazadeh
Dr. Emanuel Carlos
Guest Editors

Manuscript Submission Information

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Keywords

  • solution-based technology (coating and printing techniques)
  • AOS memristive devices and systems
  • neuromorphic computing with AOS-based memristors
  • pattern recognition based on AOS memristors
  • integration of AOS memristors with TFTs
  • system-on-panel applications
  • novel circuits on AOS-based memristors
  • modeling and simulation of AOS processes for memristive devices
  • circuit models and simulation of AOS memristors and TFTs
  • resistive RAM based on AOS materials

Published Papers (3 papers)

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Research

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10 pages, 2385 KiB  
Article
Conduction Mechanism Analysis of Abrupt- and Gradual-Switching InGaZnO Memristors
by Woo Sik Choi, Min Suk Song, Hyungjin Kim and Dae Hwan Kim
Micromachines 2022, 13(11), 1870; https://doi.org/10.3390/mi13111870 - 30 Oct 2022
Cited by 6 | Viewed by 1425
Abstract
In this work, two types of InGaZnO (IGZO) memristors were fabricated to confirm the conduction mechanism and degradation characteristics of memristors with different electrode materials. The IGZO memristor exhibits abrupt switching characteristics with the Pd electrode owing to the formation and destruction of [...] Read more.
In this work, two types of InGaZnO (IGZO) memristors were fabricated to confirm the conduction mechanism and degradation characteristics of memristors with different electrode materials. The IGZO memristor exhibits abrupt switching characteristics with the Pd electrode owing to the formation and destruction of conductive filaments but shows gradual switching characteristics with the p-type Si electrode according to the amount of generated oxygen vacancy. The electrical characteristics and conduction mechanisms of the device are analyzed using an energy band diagram and experimentally verified with random telegraph noise characteristics confirming the trap effects on the device conduction. Full article
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13 pages, 2460 KiB  
Article
Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Content
by Donguk Kim, Hee Jun Lee, Tae Jun Yang, Woo Sik Choi, Changwook Kim, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Sungjun Kim and Dae Hwan Kim
Micromachines 2022, 13(10), 1630; https://doi.org/10.3390/mi13101630 - 28 Sep 2022
Cited by 1 | Viewed by 1696
Abstract
This paper introduces a compact SPICE model of a two-terminal memory with a Pd/Ti/IGZO/p+-Si structure. In this paper, short- and long-term components are systematically separated and applied in each model. Such separations are conducted by the applied bias and oxygen flow [...] Read more.
This paper introduces a compact SPICE model of a two-terminal memory with a Pd/Ti/IGZO/p+-Si structure. In this paper, short- and long-term components are systematically separated and applied in each model. Such separations are conducted by the applied bias and oxygen flow rate (OFR) during indium gallium zinc oxide (IGZO) deposition. The short- and long-term components in the potentiation and depression curves are modeled by considering the process (OFR of IGZO) and bias conditions. The compact SPICE model with the physical mechanism of SiO2 modulation is introduced, which can be useful for optimizing the specification of memristor devices. Full article
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Review

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22 pages, 4757 KiB  
Review
Recent Progress in Thin-Film Transistors toward Digital, Analog, and Functional Circuits
by Seongjae Kim and Hocheon Yoo
Micromachines 2022, 13(12), 2258; https://doi.org/10.3390/mi13122258 - 19 Dec 2022
Cited by 1 | Viewed by 2428
Abstract
Thin-film transistors have been extensively developed due to their process merit: high compatibility with various substrates, large-area processes, and low-cost processes. Despite these advantages, most efforts for thin-film transistors still remain at the level of unit devices, so the circuit level for practical [...] Read more.
Thin-film transistors have been extensively developed due to their process merit: high compatibility with various substrates, large-area processes, and low-cost processes. Despite these advantages, most efforts for thin-film transistors still remain at the level of unit devices, so the circuit level for practical use needs to be further developed. In this regard, this review revisits digital and analog thin-film circuits using carbon nanotubes (CNTs), organic electrochemical transistors (OECTs), organic semiconductors, metal oxides, and two-dimensional materials. This review also discusses how to integrate thin-film circuits at the unit device level and some key issues such as metal routing and interconnection. Challenges and opportunities are also discussed to pave the way for developing thin-film circuits and their practical applications. Full article
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