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Micromachines
Special Issues
Recent Advances in Memory Materials and Devices
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Recent Advances in Memory Materials and Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E：Engineering and Technology".

Deadline for manuscript submissions: closed (30 November 2023) | Viewed by 1139

Special Issue Editor

Dr. Keyuan Ding

E-Mail Website
Guest Editor
College of Materials Science and Engineering, Shenzhen University, Shenzhen 518055, China
Interests: phase-change memory; heterostructure; superlattice structure; ovonic threshold switch

Special Issue Information

Dear Colleagues,

Significant progress has been made in semiconductor memory, especially phase-change memory (PCM) based on heterostructure and superlattice structure materials, which have recently attracted considerable attention due to their excellent performance. Phase-change heterostructure (PCH) can overcome the low-precision bottleneck that limits multibit storage and parallel computing in conventional PCM, offering novel physical and chemical properties for semiconductor memory devices.

The development of a new heterostructure for PCM and ovonic threshold switch (OTS) is necessary for their emerging practical device applications. For instance, Sb2Te3/TiTe2, the multilayer PCH architecture was designed for two-dimensional (2D) phase transitions in nanometer-thick Sb2Te3 phase-change material sublayers that are clamped by confinement TiTe2 sublayers, enabling well-controlled cumulative/progressive SET (crystallization) and iterative/stepwise RESET (amorphization) operations.

This Special Issue aims to present the most recent advances in the field of semiconductor memory, which focuses on PCM and OTS. We invite contributions of original research articles, as well as review articles on topics including but not limited to the theoretical calculation, synthesis, characterization, and application of such novel heterostructures for PCM or OTS.

Dr. Keyuan Ding
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • phase-change memory
  • heterostructure
  • superlattice structure
  • ovonic threshold switch

Published Papers (1 paper)

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Research

12 pages, 1954 KiB  
Article
Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a Feedback Field-Effect Transistor Using TCAD
by Jong Hyeok Oh and Yun Seop Yu
Micromachines 2023, 14(10), 1822; https://doi.org/10.3390/mi14101822 - 23 Sep 2023
Viewed by 901
Abstract
In this study, the electrical characteristics and electrical coupling effect for monolithic 3-dimensional nonvolatile memory consisting of a feedback field-effect transistor (M3D-NVM-FBFET) were investigated using technology computer-aided design. The M3D-NVM-FBFET consists of an N-type FBFET with an oxide–nitride–oxide layer and a metal–oxide–semiconductor FET [...] Read more.
In this study, the electrical characteristics and electrical coupling effect for monolithic 3-dimensional nonvolatile memory consisting of a feedback field-effect transistor (M3D-NVM-FBFET) were investigated using technology computer-aided design. The M3D-NVM-FBFET consists of an N-type FBFET with an oxide–nitride–oxide layer and a metal–oxide–semiconductor FET (MOSFET) in the top and bottom tiers, respectively. For the memory simulation, the programming and erasing voltages were applied at 18 and −18 V for 1 μs, respectively. The memory window of the M3D-NVM-FBFET was 1.98 V. As the retention simulation was conducted for 10 years, the memory window decreased from 1.98 to 0.83 V. For the M3D-NVM-FBFET, the electrical coupling that occurs through an electrical signal in the bottom-tier transistor was investigated. As the thickness of the interlayer dielectric (TILD) decreases from 100 to 10 nm, the change in the VTH increases from 0.16 to 0.87 V and from 0.15 to 0.84 V after the programming and erasing operations, respectively. M3D-NVM-FBFET circuits with a thin TILD of 50 nm or less need to be designed considering electrical coupling. Full article
(This article belongs to the Special Issue Recent Advances in Memory Materials and Devices)
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