Research

Jump to: Review

11 pages, 3662 KiB

Open AccessArticle

A 2 μm Wavelength Band Low-Loss Spot Size Converter Based on Trident Structure on the SOI Platform

by Zhutian Wang, Chenxi Xu, Zhiming Shi, Nan Ye, Hairun Guo, Fufei Pang and Yingxiong Song

Micromachines 2024, 15(4), 530; https://doi.org/10.3390/mi15040530 - 15 Apr 2024

Viewed by 362

A 2 μm wavelength band spot size converter (SSC) based on a trident structure is proposed, which is coupled to a lensed fiber with a mode field diameter of 5 μm. The cross-section of the first segment of the tapered waveguide structure in [...] Read more.

A 2 μm wavelength band spot size converter (SSC) based on a trident structure is proposed, which is coupled to a lensed fiber with a mode field diameter of 5 μm. The cross-section of the first segment of the tapered waveguide structure in the trident structure is designed as a right-angled trapezoidal shape, which can further improve the performance of the SSC. The coupling loss of the SSC is less than 0.9 dB in the wavelength range of 1.95~2.05 μm simulated by FDTD. According to the experimental results, the lowest coupling loss of the SSC is 1.425 dB/facet at 2 μm, which is close to the simulation result. The device is compatible with the CMOS process and can provide a good reference for the development of 2 μm wavelength band integrated photonics. Full article

(This article belongs to the Special Issue Silicon Photonic Devices and Integration)

► Show Figures

Figure 1

11 pages, 8918 KiB

Open AccessArticle

A Novel Position-Sensitive Linear Winding Silicon Drift Detector

by Tao Long, Jun Zhao, Bo Xiong, Xinqing Li, Minghua Tang and Zheng Li

Micromachines 2024, 15(4), 518; https://doi.org/10.3390/mi15040518 - 12 Apr 2024

Viewed by 344

Abstract

A novel position-sensitive linear winding silicon drift detector (LWSDD) was designed and simulated. On the frontside (anode side), the collecting anodes were set on both sides of the detector, and an S-shaped linear winding cathode strip was arranged in the middle, which can [...] Read more.

A novel position-sensitive linear winding silicon drift detector (LWSDD) was designed and simulated. On the frontside (anode side), the collecting anodes were set on both sides of the detector, and an S-shaped linear winding cathode strip was arranged in the middle, which can realize independent voltage division and reduce the complexity of external bias resistor chain compared with the traditional linear silicon drift detector. The detectors were arranged in a butterfly shape, which increased the effective area of the detectors and improved the collection efficiency. The linear winding silicon drift detector can obtain one-dimensional position information by measuring the drift time of electrons. The 2D position information of the incident particle is obtained from the anodes coordinates of the readout signal. One-dimensional analytically exact solutions of electric potential and field were obtained for the first time for the linear winding silicon drift detector. The simulation results show that the electric potential distribution inside the detector is uniform, and the “drift channel” inside the detector points to the collecting anodes on both sides, which proves the reasonable and feasible design of the linear winding silicon drift detector. Full article

(This article belongs to the Special Issue Silicon Photonic Devices and Integration)

► Show Figures

Figure 1

10 pages, 5908 KiB

Open AccessArticle

A 3C-SiC-on-Insulator-Based Integrated Photonic Platform Using an Anodic Bonding Process with Glass Substrates

by Jiayang Li and Andrew W. Poon

Micromachines 2023, 14(2), 399; https://doi.org/10.3390/mi14020399 - 06 Feb 2023

Cited by 2 | Viewed by 1772

Abstract

Various crystalline silicon carbide (SiC) polytypes are emerging as promising photonic materials due to their wide bandgap energies and nonlinear optical properties. However, their wafer forms cannot readily provide a refractive index contrast for optical confinement in the SiC layer, which makes it [...] Read more.

Various crystalline silicon carbide (SiC) polytypes are emerging as promising photonic materials due to their wide bandgap energies and nonlinear optical properties. However, their wafer forms cannot readily provide a refractive index contrast for optical confinement in the SiC layer, which makes it difficult to realize a SiC-based integrated photonic platform. In this paper, we demonstrate a 3C-SiC-on-insulator (3C-SiCoI)-based integrated photonic platform by transferring the epitaxial 3C-SiC layer from a silicon die to a borosilicate glass substrate using anodic bonding. By fine-tuning the fabrication process, we demonstrated nearly 100% area transferring die-to-wafer bonding. We fabricated waveguide-coupled microring resonators using sulfur hexafluoride (SF₆)-based dry etching and demonstrated a moderate loaded quality (Q) factor of 1.4 × 10⁵. We experimentally excluded the existence of the photorefractive effect in this platform at sub-milliwatt on-chip input optical power levels. This 3C-SiCoI platform is promising for applications, including large-scale integration of linear, nonlinear and quantum photonics. Full article

(This article belongs to the Special Issue Silicon Photonic Devices and Integration)

► Show Figures

Figure 1

13 pages, 3148 KiB

Open AccessArticle

Thermal Characterisation of Hybrid, Flip-Chip InP-Si DFB Lasers

by David Coenen, Huseyin Sar, Herman Oprins, Aleksandrs Marinins, Yannick De Koninck, Stuart Smyth, Yoojin Ban, Joris Van Campenhout and Ingrid De Wolf

Micromachines 2023, 14(2), 381; https://doi.org/10.3390/mi14020381 - 03 Feb 2023

Cited by 1 | Viewed by 2910

Abstract

WA detailed thermal analysis of a hybrid, flip-chip InP-Si DFB laser is presented in this work. The lasers were experimentally tested at different operating temperatures, which allowed for deriving their thermal performance characteristics: the temperature dependence of threshold current, lasing slope, and output [...] Read more.

WA detailed thermal analysis of a hybrid, flip-chip InP-Si DFB laser is presented in this work. The lasers were experimentally tested at different operating temperatures, which allowed for deriving their thermal performance characteristics: the temperature dependence of threshold current, lasing slope, and output spectrum. Using these data, the laser thermal resistance was calculated (R_th = 75.9 K/W), which allows for predicting the laser temperature during operation. This metric is also used to validate the thermal finite element models of the laser. A sensitivity study of the laser temperature was performed using these models, and multiple routes for minimising both the laser thermal resistance and thermal coupling to the carrier die are presented. The most effective way of decreasing the laser temperature is the direct attachment of a heat sink on the laser top surface. Full article

(This article belongs to the Special Issue Silicon Photonic Devices and Integration)

► Show Figures

Figure 1

10 pages, 3009 KiB

Open AccessArticle

Design and Optimization of High-Responsivity High-Speed Ge/Si Avalanche Photodiode in the C+L Band

by Chuan Li, Xinyu Li, Yan Cai, Wei Wang and Mingbin Yu

Micromachines 2023, 14(1), 108; https://doi.org/10.3390/mi14010108 - 30 Dec 2022

Cited by 1 | Viewed by 1909

Abstract

We present the design of Ge/Si avalanche photodetectors with SiN stressor-induced Ge strain for the C+L band light detection. By optimizing the placement position and thickness of the SiN layer with compressive stress, a uniform strain distribution with a maximum magnitude of 0.59% [...] Read more.

We present the design of Ge/Si avalanche photodetectors with SiN stressor-induced Ge strain for the C+L band light detection. By optimizing the placement position and thickness of the SiN layer with compressive stress, a uniform strain distribution with a maximum magnitude of 0.59% was achieved in Ge. The surface-illuminated APDs have been studied in respect of the photo-dark current, responsivity, gain, and 3-dB bandwidth. After introducing SiN stressor, the APD exhibits high primary responsivity of 0.80 A/W at 1.55 μm, 0.72 A/W at 1.625 μm, and 3-dB bandwidth of 17.5 GHz. The increased tensile strain in Ge can significantly improve the responsivity and broaden the response band of the device. This work provides a constructive approach to realizing high-responsivity high-speed Ge/Si APD working in the C+L band. Full article

(This article belongs to the Special Issue Silicon Photonic Devices and Integration)

► Show Figures

Figure 1

10 pages, 7195 KiB

Open AccessArticle

CMOS-Compatible Ultralow-Loss Three-Step Silicon Edge Coupler with Substrate Substitution in the Whole Communication Band

by Zhen Wang, Jin Zhang, Lei Zhang, Xiaoke Ruan, Weijie Tang and Tao Chu

Micromachines 2023, 14(1), 66; https://doi.org/10.3390/mi14010066 - 27 Dec 2022

Cited by 2 | Viewed by 1986

Abstract

Edge coupler is a key component of silicon-based optoelectronic chips, which dramatically reduces the coupling loss between fibers and transmission waveguides. Here, we propose an ultralow-loss three-step silicon edge coupler based on a 130 nm CMOS process. By replacing the silicon substrate with [...] Read more.

Edge coupler is a key component of silicon-based optoelectronic chips, which dramatically reduces the coupling loss between fibers and transmission waveguides. Here, we propose an ultralow-loss three-step silicon edge coupler based on a 130 nm CMOS process. By replacing the silicon substrate with a material with a lower refractive index than silicon oxide, the silicon leakage loss and polarization-dependent loss can be significantly improved. This structure avoids the existence of a cantilever, which enhances the mechanical strength of the edge coupler. Coupling with standard single-mode fiber, the simulation results demonstrate that the TE/TM mode has an ultralow loss of 0.63/1.08 dB at 1310 nm and 0.57/1.34 dB at 1550 nm, and the 0.5 dB bandwidth covering the entire communication band is about 400 nm. In the entire communication band, the polarization-dependent loss is less than 0.8 dB. Furthermore, we propose a taper shape design method based on mode analysis, which can be adapted for any taper to improve its compactness. Compared with the parabolic shape, the coupling loss of the edge coupler with a length of 460 μm for the TE mode is improved by 0.3 dB on average, this edge coupler provides a feasible solution for fiber-to-chip coupling and is perfectly suitable for wavelength division multiplexing applications in optical communications. Full article

(This article belongs to the Special Issue Silicon Photonic Devices and Integration)

► Show Figures

Figure 1

10 pages, 3837 KiB

Open AccessArticle

Three-Dimensional Polymer Variable Optical Attenuator Based on Vertical Multimode Interference with Graphene Heater

by Xinru Xu, Yuexin Yin, Mengke Yao, Xiaojie Yin, Feifei Gao, Yuanda Wu, Changming Chen, Fei Wang and Daming Zhang

Micromachines 2022, 13(12), 2116; https://doi.org/10.3390/mi13122116 - 30 Nov 2022

Cited by 2 | Viewed by 1068

Abstract

Low-power-consumption optical devices are crucial for large-scale photonic integrated circuits (PICs). In this paper, a three-dimensional (3D) polymer variable optical attenuator (VOA) is proposed. For monolithic integration of silica and polymer-based planar lightwave circuits (PLCs), the vertical VOA is inserted between silica-based waveguides. [...] Read more.

Low-power-consumption optical devices are crucial for large-scale photonic integrated circuits (PICs). In this paper, a three-dimensional (3D) polymer variable optical attenuator (VOA) is proposed. For monolithic integration of silica and polymer-based planar lightwave circuits (PLCs), the vertical VOA is inserted between silica-based waveguides. Optical and thermal analyses are performed through the beam propagation method (BPM) and finite-element method (FEM), respectively. A compact size of 3092 μm × 4 μm × 7 μm is achieved with a vertical multimode interference (MMI) structure. The proposed VOA shows an insertion loss (IL) of 0.58 dB and an extinction ratio (ER) of 21.18 dB. Replacing the graphene heater with an aluminum (Al) electrode, the power consumption is decreased from 29.90 mW to 21.25 mW. The rise and fall time are improved to 353.85 μs and 192.87 μs, respectively. The compact and high-performance VOA shows great potential for a variety of applications, including optical communications, integrated optics, and optical interconnections. Full article

(This article belongs to the Special Issue Silicon Photonic Devices and Integration)

► Show Figures

Figure 1

6 pages, 2008 KiB

Open AccessFeature PaperEditor’s ChoiceArticle

Thermo-Optic Phase Shifter with Interleaved Suspended Design for Power Efficiency and Speed Adjustment

by Feng Gao, Wu Xie, James You Sian Tan, Chew Ping Leong, Chao Li, Xianshu Luo and Guo-Qiang Lo

Micromachines 2022, 13(11), 1925; https://doi.org/10.3390/mi13111925 - 08 Nov 2022

Cited by 2 | Viewed by 1441

Abstract

Conventional thermo-optic devices—which can be broadly categorized to that with and without a thermal isolation trench—typically come with a tradeoff between thermal tuning efficiency and tuning speed. Here, we propose a method that allows us to directly define the tradeoff using a specially [...] Read more.

Conventional thermo-optic devices—which can be broadly categorized to that with and without a thermal isolation trench—typically come with a tradeoff between thermal tuning efficiency and tuning speed. Here, we propose a method that allows us to directly define the tradeoff using a specially designed thermo-optic phase shifter with an interleaved isolation trench. With the design, the tuning efficiency and speed can be precisely tailored simply by controlling the duty ratio (suspended length over total heater length) of the suspended design. Phase shifters are one of the main components in photonic-integrated circuits, and having phase shifters with a flexible design approach may enable the wide adoption of photonic applications such as an optical neural network and LiDAR. Full article

(This article belongs to the Special Issue Silicon Photonic Devices and Integration)

► Show Figures

Figure 1

Review

Jump to: Research

15 pages, 4207 KiB

Open AccessFeature PaperEditor’s ChoiceReview

Beam Steering Technology of Optical Phased Array Based on Silicon Photonic Integrated Chip

by Jinyu Wang, Ruogu Song, Xinyu Li, Wencheng Yue, Yan Cai, Shuxiao Wang and Mingbin Yu

Micromachines 2024, 15(3), 322; https://doi.org/10.3390/mi15030322 - 26 Feb 2024

Viewed by 1214

Abstract

Light detection and ranging (LiDAR) is widely used in scenarios such as autonomous driving, imaging, remote sensing surveying, and space communication due to its advantages of high ranging accuracy and large scanning angle. Optical phased array (OPA) has been studied as an important [...] Read more.

Light detection and ranging (LiDAR) is widely used in scenarios such as autonomous driving, imaging, remote sensing surveying, and space communication due to its advantages of high ranging accuracy and large scanning angle. Optical phased array (OPA) has been studied as an important solution for achieving all-solid-state scanning. In this work, the recent research progress in improving the beam steering performance of the OPA based on silicon photonic integrated chips was reviewed. An optimization scheme for aperiodic OPA is proposed. Full article

(This article belongs to the Special Issue Silicon Photonic Devices and Integration)

► Show Figures

Figure 1

32 pages, 7986 KiB

Open AccessReview

Breakthrough in Silicon Photonics Technology in Telecommunications, Biosensing, and Gas Sensing

by Muhammad Shahbaz, Muhammad A. Butt and Ryszard Piramidowicz

Micromachines 2023, 14(8), 1637; https://doi.org/10.3390/mi14081637 - 19 Aug 2023

Cited by 4 | Viewed by 2951

Abstract

Silicon photonics has been an area of active research and development. Researchers have been working on enhancing the integration density and intricacy of silicon photonic circuits. This involves the development of advanced fabrication techniques and novel designs to enable more functionalities on a [...] Read more.

Silicon photonics has been an area of active research and development. Researchers have been working on enhancing the integration density and intricacy of silicon photonic circuits. This involves the development of advanced fabrication techniques and novel designs to enable more functionalities on a single chip, leading to higher performance and more efficient systems. In this review, we aim to provide a brief overview of the recent advancements in silicon photonic devices employed for telecommunication and sensing (biosensing and gas sensing) applications. Full article

(This article belongs to the Special Issue Silicon Photonic Devices and Integration)

► Show Figures

Figure 1

Journal Menu

Journal Browser

Silicon Photonic Devices and Integration

Share This Special Issue

Special Issue Editor

Special Issue Information

Keywords

Published Papers (10 papers)

Research

Review

Further Information

Guidelines

MDPI Initiatives

Follow MDPI