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Micromachines
Special Issues
High-Performance Thermoelectric Materials and Applications
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High-Performance Thermoelectric Materials and Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: closed (10 April 2024) | Viewed by 1962

Special Issue Editor

Dr. Tianzhuo Zhan

E-Mail Website
Guest Editor
Bio-Nano Electronics Research Centre, Toyo University, Saitama 3508585, Japan
Interests: nanoscale thermal transport; thermoelectric generators; thermal management; thermal interface materials
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Thermoelectric materials directly convert temperature differences into electrical energy through the Seebeck effect, and conversely via the Peltier effect. Thermoelectric materials offer various advantages, such as direct energy conversion, free maintenance, and noiseless operations. Conventional bulk thermoelectric materials find applications in cooling and power generation on a macroscale, such as a Peltier cooler and a radioisotope thermoelectric generator. However, these conventional thermoelectric materials suffer from low efficiency. Recently, novel thermoelectric materials, including phonon–glass electron–crystal materials and low-dimension materials (such as silicon nanowires), have been developed to improve the efficiency of thermoelectric materials by separately tuning electron and phonon transport. These novel and highly efficient thermoelectric materials exhibit significant potential in applications on a microscale, including energy harvesting to provide wireless power supply for ubiquitous IoT microsensors and for cooling in the thermal management of microelectronic devices.

The aim of this Special Issue is to showcase research papers, communications, and review articles on recent experimental, numerical, and theoretical advancements in the field of thermoelectric materials and applications.

Potential topics include (but are not limited to) the following:

  • The thermal conductivity of thermoelectric materials;
  • Thermal boundary resistance in thermoelectric materials and devices;
  • Phonon engineering;
  • Phonon–glass electron–crystal materials;
  • Low-dimension thermoelectric materials;
  • Flexible thermoelectric materials;
  • Thermoelectric cooling;
  • Thermoelectric power generation;
  • Thermoelectric energy harvesting;
  • Thermal management using thermoelectric materials.

Dr. Tianzhuo Zhan
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • thermoelectric materials
  • thermoelectric devices
  • thermoelectric cooling
  • thermoelectric energy harvesting

Published Papers (1 paper)

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Review

27 pages, 6179 KiB  
Review
Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review
by Tianzhuo Zhan, Mao Xu, Zhi Cao, Chong Zheng, Hiroki Kurita, Fumio Narita, Yen-Ju Wu, Yibin Xu, Haidong Wang, Mengjie Song, Wei Wang, Yanguang Zhou, Xuqing Liu, Yu Shi, Yu Jia, Sujun Guan, Tatsuro Hanajiri, Toru Maekawa, Akitoshi Okino and Takanobu Watanabe
Micromachines 2023, 14(11), 2076; https://doi.org/10.3390/mi14112076 - 08 Nov 2023
Cited by 1 | Viewed by 1783
Abstract
Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in [...] Read more.
Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices. Full article
(This article belongs to the Special Issue High-Performance Thermoelectric Materials and Applications)
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