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Recent Advances in Photonic Materials and Devices

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Simulation and Design".

Deadline for manuscript submissions: closed (30 November 2021) | Viewed by 10251

Special Issue Editor


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Guest Editor
Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 00-662 Warszawa, Poland
Interests: sensing devices: with IoT, AI and optoelectronics or photonics components optoelectronics; photonics components-applications and constructions

Special Issue Information

Dear Colleagues,

This Special Issue is devoted to the influence of photonic materials on the parameters and constructions of photonic devices. There are numerous approximations to photonic device definitions and classifications. There are also wide ranges of photonic materials understanding. The principle of work of the photonic device is related to the generation, detection, and manipulation of light. The same agreement exists in the practice and science of photonic materials. An interesting fact is that both photonic materials and photonic devices are systematized as passive and active, as well as two-dimensional (planar) or three-dimensional. The difference between photonic devices and photonic materials is related to the presence of electronic circuits and electric signals. Moreover, all materials exposed to light in the photonic device are considered photonic materials. Advances in the presented area are linked with application-based and theoretical works. In application-driven works, a parallel analysis of various photonic materials' impact on the characteristics of the device is very interesting. Hybrid models of the system of photonic materials tied to the description of the photonic device in theoretical works are also noteworthy. Thus, submissions of a wide range of papers that jointly present parameters of photonic materials and devices are welcome.

Dr hab. Michał Borecki
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • photonic device
  • photonic material
  • application of photonic materials
  • modeling of photonic materials
  • application of photonic devices
  • modeling of photonic devices

Published Papers (2 papers)

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Research

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8 pages, 1236 KiB  
Article
Electrical and Optical Properties of Indium and Lead Co-Doped Cd0.9Zn0.1Te
by Yasir Zaman, Vineet Tirth, Nasir Rahman, Amjad Ali, Rajwali Khan, Ali Algahtani, Kashif Irshad, Saiful Islam and Tao Wang
Materials 2021, 14(19), 5825; https://doi.org/10.3390/ma14195825 - 05 Oct 2021
Cited by 1 | Viewed by 1259
Abstract
We have investigated the electrical and optical properties of Cd0.9Zn0.1Te:(In,Pb) wafers obtained from the tip, middle, and tail of the same ingot grown by modified vertical Bridgman method using I-V measurement, Hall measurement, IR Transmittance, IR Microscopy and Photoluminescence [...] Read more.
We have investigated the electrical and optical properties of Cd0.9Zn0.1Te:(In,Pb) wafers obtained from the tip, middle, and tail of the same ingot grown by modified vertical Bridgman method using I-V measurement, Hall measurement, IR Transmittance, IR Microscopy and Photoluminescence (PL) spectroscopy. I-V results show that the resistivity of the tip, middle, and tail wafers are 1.8 × 1010, 1.21 × 109, and 1.2 × 1010 Ω·cm, respectively, reflecting native deep level defects dominating in tip and tail wafers for high resistivity compared to the middle part. Hall measurement shows the conductivity type changes from n at the tip to p at the tail in the growth direction. IR Transmittance for tail, middle, and tip is about 58.3%, 55.5%, and 54.1%, respectively. IR microscopy shows the density of Te/inclusions at tip, middle, and tail are 1 × 103, 6 × 102 and 15 × 103/cm2 respectively. Photoluminescence (PL) spectra reflect that neutral acceptor exciton (A0,X) and neutral donor exciton (D0,X) of tip and tail wafers have high intensity corresponding to their high resistivity compared to the middle wafer, which has resistivity a little lower. These types of materials have a large number of applications in radiation detection. Full article
(This article belongs to the Special Issue Recent Advances in Photonic Materials and Devices)
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Review

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16 pages, 2076 KiB  
Review
Overview of the Current State of Gallium Arsenide-Based Solar Cells
by Nikola Papež, Rashid Dallaev, Ştefan Ţălu and Jaroslav Kaštyl
Materials 2021, 14(11), 3075; https://doi.org/10.3390/ma14113075 - 04 Jun 2021
Cited by 43 | Viewed by 8421
Abstract
As widely-available silicon solar cells, the development of GaAs-based solar cells has been ongoing for many years. Although cells on the gallium arsenide basis today achieve the highest efficiency of all, they are not very widespread. They have particular specifications that make them [...] Read more.
As widely-available silicon solar cells, the development of GaAs-based solar cells has been ongoing for many years. Although cells on the gallium arsenide basis today achieve the highest efficiency of all, they are not very widespread. They have particular specifications that make them attractive, especially for certain areas. Thanks to their durability under challenging conditions, it is possible to operate them in places where other solar cells have already undergone significant degradation. This review summarizes past, present, and future uses of GaAs photovoltaic cells. It examines advances in their development, performance, and various current implementations and modifications. Full article
(This article belongs to the Special Issue Recent Advances in Photonic Materials and Devices)
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