materials-logo

Journal Browser

Journal Browser

Optoelectronic Characterizations of 2D Materials

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (30 June 2020) | Viewed by 4064

Special Issue Editor


E-Mail Website
Guest Editor
Physics and Astronomy Department, University of Nevada, Las Vegas, NV 89154, USA
Interests: nanotechnology; 2D materials; van der Waals heterostructures; low temperature transport; optoelectronics; superconductivity; molecular electronics; THz spectroscopy; driven systems

Special Issue Information

Dear Colleagues,

Atomically, thin two-dimensional materials hold great promise for the future of electronics and optoelectronics. A multitude of devices and applications have been explored showing that these materials often possess superior properties to the conventional materials used in modern electronics. Graphene has paved the way, forming the earliest promising devices. Semiconducting, transitional metal dichalcogenides quickly followed, and single-layer MoS2 has displayed ultra-high responsivities that make it well suited for photodetector applications. Black phosphorus possesses a direct bandgap that is tunable with material thickness, making it ideal for infrared and visible light applications. A new class of transition-metal trichalcoginides (MX3) brings quasi-1D characteristics to the table, opening the door to the generation and detection of polarized light and applications in on-chip polarizers, polarization sensitive photodetectors, and polarized light emission. Newcomers are being (re)discovered daily, and the field is rapidly progressing with each investigation.

A continuing goal is to identify the processes at work in these highly promising materials. Photogating often results in high gains, and hybrid device architectures incorporating molecular coatings and quantum dots build on this premise. A fast readout can be achieved through interfacing photoactive semiconductors, with metallic 2D materials used as contact electrodes preserving the overall 2D geometry and improving interfacial transport. Once the physical mechanisms are identified, they can be manipulated and harnessed to achieve an optimal device response.

In this Special Issue, we continue the research on quality 2D materials with outstanding optoelectronic properties. We aim to cover the synthesis, device fabrication, and optoelectronic characterizations, highlighting the physical processes at work.

Dr. Joshua Island
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Two-dimensional (2D) materials
  • Layered materials
  • Graphene
  • Transition-metal dichalcogenides
  • Transitional-metal trichalcogenides
  • Black phosphorus
  • Transistor
  • Photodetector
  • Optoelectronics
  • Photonics
  • Photocurrent
  • Photovoltaics
  • Photogating
  • Photoconductance

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Research

8 pages, 1657 KiB  
Article
Direct Transformation of Crystalline MoO3 into Few-Layers MoS2
by Felix Carrascoso, Gabriel Sánchez-Santolino, Chun-wei Hsu, Norbert M. Nemes, Almudena Torres-Pardo, Patricia Gant, Federico J. Mompeán, Kourosh Kalantar-zadeh, José A. Alonso, Mar García-Hernández, Riccardo Frisenda and Andres Castellanos-Gomez
Materials 2020, 13(10), 2293; https://doi.org/10.3390/ma13102293 - 15 May 2020
Cited by 3 | Viewed by 3793
Abstract
We fabricated large-area atomically thin MoS2 layers through the direct transformation of crystalline molybdenum trioxide (MoO3) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10–20 nm single-crystal domain size) with areas of up to 300 [...] Read more.
We fabricated large-area atomically thin MoS2 layers through the direct transformation of crystalline molybdenum trioxide (MoO3) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10–20 nm single-crystal domain size) with areas of up to 300 × 300 µm2, 2–4 layers in thickness and show a marked p-type behavior. The synthesized films are characterized by a combination of complementary techniques: Raman spectroscopy, X-ray diffraction, transmission electron microscopy and electronic transport measurements. Full article
(This article belongs to the Special Issue Optoelectronic Characterizations of 2D Materials )
Show Figures

Figure 1

Back to TopTop