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Research Progress in Flexible Electronic Materials and Devices

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Smart Materials".

Deadline for manuscript submissions: closed (20 August 2023) | Viewed by 831

Special Issue Editors


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Guest Editor
School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China
Interests: functional oxide thin films; flexible electronics; magnetic sensing materials and related chips; energy storage materials

E-Mail Website
Guest Editor
School of Microelectronics, Xi'an Jiaotong University, Xi'an, China
Interests: spintronics; magnetic oxide thin films; magnetic sensing materials; epitaxial thin film and devices; flexible electronics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Different from the traditional semiconductor silicon integration devices, flexible electronic devices have unique advantages, such as flexibility and ductility. It is necessary to grasp the physical properties of flexible single-crystal functional films under different bending states before the design of flexible devices, and it has become one of the key scientific points to be solved. As we all know, functional single-crystal oxide materials have rich physical properties due to the strong interaction among charge, spin, orbit and lattice. By introducing the new physical parameter of mechanical bending deformation/strain, some unique physical phenomena and properties will be produced. Therefore, the effects of bending deformation/strain on the ferromagnetic, ferroelectric, domain switching and electrical transport properties of flexible materials should be studied, and the mechanism of mechanical bending induced the change of physical properties will be revealed. Therefore, a series of high-quality prototype flexible devices can further achieve multifunction, miniaturization and integration for future flexible electrics.

Prof. Dr. Ming Liu
Dr. Lvkang Shen
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

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Keywords

  • Flexible Electronics
  • Flexible Devices
  • Functional Oxide Materials
  • Inorganic Materials
  • Thin Films
  • Strain Engineering
  • Sensing Materials

Published Papers (1 paper)

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Research

9 pages, 2101 KiB  
Article
Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics
by Guangliang Hu, Yinchang Shen, Lvkang Shen, Chunrui Ma and Ming Liu
Materials 2023, 16(10), 3798; https://doi.org/10.3390/ma16103798 - 17 May 2023
Viewed by 1009
Abstract
In this work, we explored the potential of the ferroelectric gate of (Pb0.92La0.08)(Zr0.30Ti0.70)O3 (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices. Based on the deep understanding of the VDirac of PLZT(8/30/70) gate [...] Read more.
In this work, we explored the potential of the ferroelectric gate of (Pb0.92La0.08)(Zr0.30Ti0.70)O3 (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices. Based on the deep understanding of the VDirac of PLZT(8/30/70) gate GFET, which determines the application of the flexible GFET devices, the polarization mechanisms of PLZT(8/30/70) under bending deformation were analyzed. It was found that both flexoelectric polarization and piezoelectric polarization exist under bending deformation, and their polarization direction is opposite under the same bending deformation. Thus, a relatively stable of VDirac is obtained due to the combination of these two effects. In contrast to the relatively good linear movement of VDirac under bending deformation of relaxor ferroelectric (Pb0.92La0.08)(Zr0.52Ti0.48)O3 (PLZT(8/52/48)) gated GFET, these stable properties of the PLZT(8/30/70) gate GFETs make them have great potential for applications in flexible devices. Full article
(This article belongs to the Special Issue Research Progress in Flexible Electronic Materials and Devices)
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