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Research Progress on Two-Dimensional Materials
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Research Progress on Two-Dimensional Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (20 November 2023) | Viewed by 9865

Special Issue Editor

Dr. Shinpei Ogawa

E-Mail Website
Guest Editor
Mitsubishi Electric Corporation, Hyogo 661-0972, Japan
Interests: graphene; 2D materials; plasmonics; metamaterials
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The field of two-dimensional (2D) materials has seen significant advances in both fundamental science and applications. The tremendous variety of 2D materials, such as graphene, hexagonal boron nitride, transition metal dichalcogenides and phosphorene, and their van der Waals heterostructures produce diverse electronic, optical and mechanical properties according to their unique bandgap structures. Such diversity is a rich source for novel phenomena, such as valleytronics, twistronics and topology, together with novel electro-optical devices, which cannot be achieved using conventional technologies based on bulk materials. Therefore, this Special Issue aims to introduce recent progress in 2D materials, as well as their applications, for a wide range of topics.

All topics related to 2D materials, including novel physics, fabrication methods, ab initio calculations, biological and chemical sensors and electronic and/or optical devices, are welcome. I hope this Special Issue inspires both academic and industrial communities towards breaking new ground.

Dr. Shinpei Ogawa
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • graphene
  • two-dimensional materials
  • TMDC
  • hBN
  • black phosphorus
  • van der Waals heterostructure

Published Papers (4 papers)

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Research

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9 pages, 2441 KiB  
Article
Energy Harvesting of Deionized Water Droplet Flow over an Epitaxial Graphene Film on a SiC Substrate
by Yasuhide Ohno, Ayumi Shimmen, Tomohiro Kinoshita and Masao Nagase
Materials 2023, 16(12), 4336; https://doi.org/10.3390/ma16124336 - 12 Jun 2023
Viewed by 879
Abstract
This study investigates energy harvesting by a deionized (DI) water droplet flow on an epitaxial graphene film on a SiC substrate. We obtain an epitaxial single-crystal graphene film by annealing a 4H-SiC substrate. Energy harvesting of the solution droplet flow on the graphene [...] Read more.
This study investigates energy harvesting by a deionized (DI) water droplet flow on an epitaxial graphene film on a SiC substrate. We obtain an epitaxial single-crystal graphene film by annealing a 4H-SiC substrate. Energy harvesting of the solution droplet flow on the graphene surface has been investigated by using NaCl or HCl solutions. This study validates the voltage generated from the DI water flow on the epitaxial graphene film. The maximum generated voltage was as high as 100 mV, which was a quite large value compared with the previous reports. Furthermore, we measure the dependence of flow direction on electrode configuration. The generated voltages are independent of the electrode configuration, indicating that the DI water flow direction is not influenced by the voltage generation for the single-crystal epitaxial graphene film. Based on these results, the origin of the voltage generation on the epitaxial graphene film is not only an outcome of the fluctuation of the electrical-double layer, resulting in the breaking of the uniform balance of the surface charges, but also other factors such as the charges in the DI water or frictional electrification. In addition, the buffer layer has no effect on the epitaxial graphene film on the SiC substrate. Full article
(This article belongs to the Special Issue Research Progress on Two-Dimensional Materials)
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Review

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22 pages, 4577 KiB  
Review
Challenges for Field-Effect-Transistor-Based Graphene Biosensors
by Takao Ono, Satoshi Okuda, Shota Ushiba, Yasushi Kanai and Kazuhiko Matsumoto
Materials 2024, 17(2), 333; https://doi.org/10.3390/ma17020333 - 09 Jan 2024
Viewed by 1945
Abstract
Owing to its outstanding physical properties, graphene has attracted attention as a promising biosensor material. Field-effect-transistor (FET)-based biosensors are particularly promising because of their high sensitivity that is achieved through the high carrier mobility of graphene. However, graphene-FET biosensors have not yet reached [...] Read more.
Owing to its outstanding physical properties, graphene has attracted attention as a promising biosensor material. Field-effect-transistor (FET)-based biosensors are particularly promising because of their high sensitivity that is achieved through the high carrier mobility of graphene. However, graphene-FET biosensors have not yet reached widespread practical applications owing to several problems. In this review, the authors focus on graphene-FET biosensors and discuss their advantages, the challenges to their development, and the solutions to the challenges. The problem of Debye screening, in which the surface charges of the detection target are shielded and undetectable, can be solved by using small-molecule receptors and their deformations and by using enzyme reaction products. To address the complexity of sample components and the detection mechanisms of graphene-FET biosensors, the authors outline measures against nonspecific adsorption and the remaining problems related to the detection mechanism itself. The authors also introduce a solution with which the molecular species that can reach the sensor surfaces are limited. Finally, the authors present multifaceted approaches to the sensor surfaces that provide much information to corroborate the results of electrical measurements. The measures and solutions introduced bring us closer to the practical realization of stable biosensors utilizing the superior characteristics of graphene. Full article
(This article belongs to the Special Issue Research Progress on Two-Dimensional Materials)
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14 pages, 1971 KiB  
Review
A Review on Carrier Mobilities of Epitaxial Graphene on Silicon Carbide
by Wataru Norimatsu
Materials 2023, 16(24), 7668; https://doi.org/10.3390/ma16247668 - 15 Dec 2023
Viewed by 898
Abstract
Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that produces wafer-scale, single-orientation graphene on an insulating substrate. It is often referred to as epigraphene, and has been thought to be suitable for electronics applications. In particular, high-frequency devices for [...] Read more.
Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that produces wafer-scale, single-orientation graphene on an insulating substrate. It is often referred to as epigraphene, and has been thought to be suitable for electronics applications. In particular, high-frequency devices for communication technology or large quantum Hall plateau for metrology applications using epigraphene are expected, which require high carrier mobility. However, the carrier mobility of as-grown epigraphene exhibit the relatively low values of about 1000 cm2/Vs. Fortunately, we can hope to improve this situation by controlling the electronic state of epigraphene by modifying the surface and interface structures. In this paper, the mobility of epigraphene and the factors that govern it will be described, followed by a discussion of attempts that have been made to improve mobility in this field. These understandings are of great importance for next-generation high-speed electronics using graphene. Full article
(This article belongs to the Special Issue Research Progress on Two-Dimensional Materials)
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17 pages, 6463 KiB  
Review
Hexagonal Boron Nitride for Photonic Device Applications: A Review
by Shinpei Ogawa, Shoichiro Fukushima and Masaaki Shimatani
Materials 2023, 16(5), 2005; https://doi.org/10.3390/ma16052005 - 28 Feb 2023
Cited by 7 | Viewed by 5285
Abstract
Hexagonal boron nitride (hBN) has emerged as a key two-dimensional material. Its importance is linked to that of graphene because it provides an ideal substrate for graphene with minimal lattice mismatch and maintains its high carrier mobility. Moreover, hBN has unique properties in [...] Read more.
Hexagonal boron nitride (hBN) has emerged as a key two-dimensional material. Its importance is linked to that of graphene because it provides an ideal substrate for graphene with minimal lattice mismatch and maintains its high carrier mobility. Moreover, hBN has unique properties in the deep ultraviolet (DUV) and infrared (IR) wavelength bands owing to its indirect bandgap structure and hyperbolic phonon polaritons (HPPs). This review examines the physical properties and applications of hBN-based photonic devices that operate in these bands. A brief background on BN is provided, and the theoretical background of the intrinsic nature of the indirect bandgap structure and HPPs is discussed. Subsequently, the development of DUV-based light-emitting diodes and photodetectors based on hBN’s bandgap in the DUV wavelength band is reviewed. Thereafter, IR absorbers/emitters, hyperlenses, and surface-enhanced IR absorption microscopy applications using HPPs in the IR wavelength band are examined. Finally, future challenges related to hBN fabrication using chemical vapor deposition and techniques for transferring hBN to a substrate are discussed. Emerging techniques to control HPPs are also examined. This review is intended to assist researchers in both industry and academia in the design and development of unique hBN-based photonic devices operating in the DUV and IR wavelength regions. Full article
(This article belongs to the Special Issue Research Progress on Two-Dimensional Materials)
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