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Magnetochemistry
Special Issues
Spin and Charge Transport in Novel Quantum and Topological Materials
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Spin and Charge Transport in Novel Quantum and Topological Materials

A special issue of Magnetochemistry (ISSN 2312-7481). This special issue belongs to the section "Spin Crossover and Spintronics".

Deadline for manuscript submissions: 20 June 2024 | Viewed by 4389

Special Issue Editors

Prof. Dr. Xuan Gao

E-Mail Website
Guest Editor
Department of Physics, Case Western Reserve University, Cleveland, OH 44106, USA
Interests: nanomaterials; magneto-transport; electronic materials; sensor
Dr. Shulei Zhang

E-Mail Website
Guest Editor
Department of Physics, Case Western Reserve University, Cleveland, OH 44106, USA
Interests: theory of magnetic and topological materials; spin electronics; quantum information science

Special Issue Information

Dear Colleagues,

In the past decade, there has been an explosion of research developments in the broad area of quantum and topological materials. The discoveries of topological materials and atomically thin two-dimensional (2D) magnetic materials are two remarkable examples. One of the most striking properties of emerging quantum/topological materials is their transport properties, where the intricate quantum/topological properties of electrons in the material lead to novel electronic states or phenomena (e.g., topological surface/edge states, correlated insulator to superconductor transition). Since electrons carry electric charge as well as spin angular momentum, quantum or topological materials often host interesting magnetotransport properties due to the coupling between charge, spin, and band topology (high linear magnetoresistance, anomalous quantum Hall, chiral-anomaly-induced negative magnetoresistance, etc.). These novel quantum effects may be exploited in future electronic, memory, or computing devices with high performance and low dissipation. This Special Issue reviews the current status and future perspectives of different quantum/topological materials (in either bulk, thin film, or nanostructure form) and devices with a focus on the electronic and spin transport properties.

Prof. Dr. Xuan Gao
Dr. Shulei Zhang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Magnetochemistry is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2700 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • spintronics
  • topological materials
  • quantum transport
  • quantum materials
  • electronic transport
  • spin transport
  • nanoelectronics
  • quantum structures
  • nanomaterials

Published Papers (2 papers)

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Research

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17 pages, 3633 KiB  
Article
Thermal Conductivity for p–(Bi, Sb)2Te3 Films of Topological Insulators
by Lidia N. Lukyanova, Yuri A. Boikov, Oleg A. Usov, Viacheslav A. Danilov, Igor V. Makarenko and Vasilii N. Petrov
Magnetochemistry 2023, 9(6), 141; https://doi.org/10.3390/magnetochemistry9060141 - 25 May 2023
Viewed by 964
Abstract
In this study, we investigated the temperature dependencies of the total, crystal lattice, and electronic thermal conductivities in films of topological insulators p–Bi0.5Sb1.5Te3 and p–Bi2Te3 formed by discrete and thermal evaporation methods. The largest decrease [...] Read more.
In this study, we investigated the temperature dependencies of the total, crystal lattice, and electronic thermal conductivities in films of topological insulators p–Bi0.5Sb1.5Te3 and p–Bi2Te3 formed by discrete and thermal evaporation methods. The largest decrease in the lattice thermal conductivity because of the scattering of long-wavelength phonons on the grain interfaces was observed in the films of the solid-solution p–Bi0.5Sb1.5Te3 deposited by discrete evaporation on the amorphous substrates of polyimide without thermal treatment. It was shown that in the p–Bi0.5Sb1.5Te3 films with low thermal conductivity, the energy dependence of the relaxation time is enhanced, which is specific to the topological insulators. The electronic thermal conductivity was determined by taking into account the effective scattering parameter in the relaxation time approximation versus energy in the Lorentz number calculations. A correlation was established between the thermal conductivity and the peculiarities of the morphology of the interlayer surface (0001) in the studied films. Additionally, the total κ and the lattice κL thermal conductivities decrease, while the number of grains and the roughness of the surface (0001) increase in unannealed films compared to annealed ones. It was demonstrated that increasing the thermoelectric figure of merit ZT in the p–Bi0.5Sb1.5Te3 films formed by discrete evaporation on a polyimide substrate is determined by an increase in the effective scattering parameter in topological insulators due to enhancement in the energy dependence of the relaxation time. Full article
(This article belongs to the Special Issue Spin and Charge Transport in Novel Quantum and Topological Materials)
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Review

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28 pages, 3347 KiB  
Review
Interacting with Futuristic Topological Quantum Materials: A Potential Candidate for Spintronics Devices
by Prashant Kumar, Ravi Kumar, Sanjeev Kumar, Manoj Kumar Khanna, Ravinder Kumar, Vinod Kumar and Akanksha Gupta
Magnetochemistry 2023, 9(3), 73; https://doi.org/10.3390/magnetochemistry9030073 - 02 Mar 2023
Viewed by 2691
Abstract
Spintronics, also known as magneto-electronics or spin transport electronics, uses the magnetic moment of the electron due to intrinsic spin along with its electric charge. In the present review, the topological insulators (2D, 3D, and hydride) were discussed including the conducting edge of [...] Read more.
Spintronics, also known as magneto-electronics or spin transport electronics, uses the magnetic moment of the electron due to intrinsic spin along with its electric charge. In the present review, the topological insulators (2D, 3D, and hydride) were discussed including the conducting edge of 2D topological insulators (TIs). Preparation methods of TIs along with fundamental properties, such as low power dissipation and spin polarized electrons, have been explored. Magnetic TIs have been extensively discussed and explained. Weyl phases, topological superconductors, and TIs are covered in this review. We have focused on creating novel spintronic gadgets based on TIs which have metallic topological exterior facades that are topologically defended and have an insulating bulk. In this review, topological phases are discussed as a potential candidate for novel quantum phenomena and new technological advances for fault-tolerant quantum computation in spintronics, low-power electronics, and as a host for Majorana fermions are elucidated. Room temperature stable magnetic skyrmions and anti-skyrmions in spintronics for next-generation memory/storage devices have been reported. Full article
(This article belongs to the Special Issue Spin and Charge Transport in Novel Quantum and Topological Materials)
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