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Special Issue "Spin and Charge Transport in Novel Quantum and Topological Materials"

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Guest Editor

Department of Physics, Case Western Reserve University, Cleveland, OH 44106, USA
Interests: nanomaterials; magneto-transport; electronic materials; sensor

Dr. Shulei Zhang

E-Mail Website
Guest Editor

Department of Physics, Case Western Reserve University, Cleveland, OH 44106, USA
Interests: theory of magnetic and topological materials; spin electronics; quantum information science

Special Issue Information

Dear Colleagues,

In the past decade, there has been an explosion of research developments in the broad area of quantum and topological materials. The discoveries of topological materials and atomically thin two-dimensional (2D) magnetic materials are two remarkable examples. One of the most striking properties of emerging quantum/topological materials is their transport properties, where the intricate quantum/topological properties of electrons in the material lead to novel electronic states or phenomena (e.g., topological surface/edge states, correlated insulator to superconductor transition). Since electrons carry electric charge as well as spin angular momentum, quantum or topological materials often host interesting magnetotransport properties due to the coupling between charge, spin, and band topology (high linear magnetoresistance, anomalous quantum Hall, chiral-anomaly-induced negative magnetoresistance, etc.). These novel quantum effects may be exploited in future electronic, memory, or computing devices with high performance and low dissipation. This Special Issue reviews the current status and future perspectives of different quantum/topological materials (in either bulk, thin film, or nanostructure form) and devices with a focus on the electronic and spin transport properties.

Prof. Dr. Xuan Gao
Dr. Shulei Zhang
Guest Editors

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Keywords

spintronics
topological materials
quantum transport
quantum materials
electronic transport
spin transport
nanoelectronics
quantum structures
nanomaterials

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Research

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Open AccessArticle

Thermal Conductivity for p–(Bi, Sb)₂Te₃ Films of Topological Insulators

Lidia N. Lukyanova

Yuri A. Boikov

Oleg A. Usov

Viacheslav A. Danilov

Igor V. Makarenko

and

Vasilii N. Petrov

Magnetochemistry 2023, 9(6), 141; https://doi.org/10.3390/magnetochemistry9060141 - 25 May 2023

Viewed by 589

Abstract

In this study, we investigated the temperature dependencies of the total, crystal lattice, and electronic thermal conductivities in films of topological insulators p–Bi_0.5Sb_1.5Te₃ and p–Bi₂Te₃ formed by discrete and thermal evaporation methods. The largest decrease in the lattice thermal conductivity because of the scattering of long-wavelength phonons on the grain interfaces was observed in the films of the solid-solution p–Bi_0.5Sb_1.5Te₃ deposited by discrete evaporation on the amorphous substrates of polyimide without thermal treatment. It was shown that in the p–Bi_0.5Sb_1.5Te₃ films with low thermal conductivity, the energy dependence of the relaxation time is enhanced, which is specific to the topological insulators. The electronic thermal conductivity was determined by taking into account the effective scattering parameter in the relaxation time approximation versus energy in the Lorentz number calculations. A correlation was established between the thermal conductivity and the peculiarities of the morphology of the interlayer surface (0001) in the studied films. Additionally, the total κ and the lattice κ_L thermal conductivities decrease, while the number of grains and the roughness of the surface (0001) increase in unannealed films compared to annealed ones. It was demonstrated that increasing the thermoelectric figure of merit ZT in the p–Bi_0.5Sb_1.5Te₃ films formed by discrete evaporation on a polyimide substrate is determined by an increase in the effective scattering parameter in topological insulators due to enhancement in the energy dependence of the relaxation time. Full article

(This article belongs to the Special Issue Spin and Charge Transport in Novel Quantum and Topological Materials)

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Open AccessReview

Interacting with Futuristic Topological Quantum Materials: A Potential Candidate for Spintronics Devices

and

Magnetochemistry 2023, 9(3), 73; https://doi.org/10.3390/magnetochemistry9030073 - 02 Mar 2023

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Abstract

Spintronics, also known as magneto-electronics or spin transport electronics, uses the magnetic moment of the electron due to intrinsic spin along with its electric charge. In the present review, the topological insulators (2D, 3D, and hydride) were discussed including the conducting edge of 2D topological insulators (TIs). Preparation methods of TIs along with fundamental properties, such as low power dissipation and spin polarized electrons, have been explored. Magnetic TIs have been extensively discussed and explained. Weyl phases, topological superconductors, and TIs are covered in this review. We have focused on creating novel spintronic gadgets based on TIs which have metallic topological exterior facades that are topologically defended and have an insulating bulk. In this review, topological phases are discussed as a potential candidate for novel quantum phenomena and new technological advances for fault-tolerant quantum computation in spintronics, low-power electronics, and as a host for Majorana fermions are elucidated. Room temperature stable magnetic skyrmions and anti-skyrmions in spintronics for next-generation memory/storage devices have been reported. Full article

(This article belongs to the Special Issue Spin and Charge Transport in Novel Quantum and Topological Materials)

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Special Issue "Spin and Charge Transport in Novel Quantum and Topological Materials"

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